Electrical Properties of PZT Prepared by Pulsed Laser Ablation on Various Electrodes

1994 ◽  
Vol 361 ◽  
Author(s):  
Akiharu Morimoto ◽  
Yasuhiro Yamanaka ◽  
Toshiharu Minamikawa

ABSTRACTThe effect of various electrodes on the ferroelectric properties of lead-zirconate-titanate (Pb(Zr0.52Ti0.48)O3 PZT) films through the film structure is presented. All the PZT films were deposited by pulsed laser ablation (PLA) using an ArF excimer laser. For electrode materials, YBa2Cu3O7 (YBCO) and Ni-alloy were deposited by pulsed laser ablation and sputtering, respectively. As a result various kinds of PZT films with various film structures were obtained. These experiments revealed that there is no simple correlation between the film structure and the fatigue resistance. The fatigue resistance is, however, found to be improved primarily by decreasing the switched-charge density, although the correlation shows some ambiguity. This suggests that the large polarization reversal accelerates the fatigue but there remained the possibility that the fatigue resistance is improved by the optimization of the film structure and film-substrate interface.

1999 ◽  
Vol 14 (3) ◽  
pp. 940-947 ◽  
Author(s):  
Sucharita Madhukar ◽  
S. Aggarwal ◽  
A. M. Dhote ◽  
R. Ramesh ◽  
S. B. Samavedam ◽  
...  

We report on the feasibility of using molybdenum silicide as a conducting barrier for integration of ferroelectric lead zirconate titanate capacitors on Si. Thin films of MoSi2 were deposited by pulsed laser-ablation deposition (PLD). The silicide films showed a structural transition from amorphous to orthorhombic to tetragonal phase as the temperature of deposition was changed from room temperature to 900 °C. The four-probe resistivity and surface roughness of the films decreased with an increase in the deposition temperature and crystallinity of the phase. Ferroelectric (La, Sr)CoO3/Pb(Nb, Zr, Ti)O3/(La, Sr)CoO3 capacitors were grown on Si/poly Si/MoSi2, and Si/poly Si/MoSi2/Pt structures. Transmission electron microscopy (TEM) studies of the MoSi2/LSCO and MoSi2/Pt/LSCO heterostructures indicated the formation of a thin layer of SiO2. In the case of Pt/MoSi2, Pt reacts with the silicide and forms PtSi, consuming the entire platinum layer and, thus, makes it unsuitable as a composite barrier. Electrical testing of the LSCO/PNZT/LSCO capacitors through capacitive coupling showed desirable ferroelectric properties on these substrates.


2001 ◽  
Author(s):  
Masaaki Ichiki ◽  
Lulu Zhang ◽  
Zhanjie Wang ◽  
Yasushi Morikawa ◽  
Makoto Tanaka ◽  
...  

1996 ◽  
Vol 433 ◽  
Author(s):  
L. G. Coccia ◽  
G. C. Tyrrell ◽  
I. W. Boyd

AbstractA number of factors have been identified as affecting the gas phase oxidation of cations during pulsed laser ablation of lead zirconate titanate (PZT), by using energy dispersive mass spectrometry (EDMS). These phenomena are known to be critical to the deposition of high quality thin films of PZT. However, to isolate the role of each cation species and the influence of its gas phase properties, we have also looked beyond the ablation of the PZT ceramic. In this paper, we detail our observations during pulsed laser ablation of electroceramic and metallic targets, specifically PZT, Pb and Ti. We have observed the evolution and transport of molecular species during gas phase expansion over a wide range of oxygen pressures (10−7 - 10−1 mbar) and laser fluences (0.3 -10 Jcm−2). The yields of the molecular ion species are strongly dependent upon the number density of the background gas. We propose an interpretation of the relative yields of the species based upon their respective gas phase binding energies and their ease of formation based upon the reaction thermodynamics and reaction cross-section of each species.


1997 ◽  
Vol 109-110 ◽  
pp. 299-304 ◽  
Author(s):  
A De Benedittis ◽  
A Di Cristoforo ◽  
G Majni ◽  
P Mengucci ◽  
B.E Watts ◽  
...  

1994 ◽  
Vol 361 ◽  
Author(s):  
Jyrki Lapp Alainen ◽  
Johannes Frantti ◽  
Seppo Leppävuori

ABSTRACTPulsed laser ablation was used to deposit Nd-doped lead zirconate titanate (PZT) thin films with a thickness of from 100 to 800 nm from a Pb0.97 Nd0.02(Zr0.55Ti0.45)O3 target. The films were ablated onto sapphire and MgO substrates using a XeCl excimer laser (pulse energy 50 mJ, wavelength 308 nm, pulse duration 20 ns). The distance between the target and the substrates was 40 mm, and the angle between the target normal and the incident beam was 45 °. The films were post-annealed in air at various temperatures (600 – 900 °C) with PZT powder. It was found that the laser beam energy density on the surface of the target had a significant effect on the composition of the films, the number of particulates on the surface of the films and the growth rates of the films. Lead deficiency was found in the films in the case of high fluence (> 1.5 J/cm2) while low fluence values (< 1.0 J/cm2) gave an excess of lead and too low Zr/(Zr+Ti) ratios. The particulate number density was low for fluence values between 0.5 and 1.5 J/cm2. EDS and X-ray diffraction was used to determine the composition and the crystal structure of the annealed films. The films deposited using a low fluence showed increasing tetragonal c/a-ratio with increasing post-annealing temperatures. Raman spectra measured from annealed films were found to be typical of PZT.


2008 ◽  
Vol 14 (S3) ◽  
pp. 53-56
Author(s):  
S.A.S. Rodrigues ◽  
A. Khodorov ◽  
M. Pereira ◽  
M.J.M. Gomes

Ferroelectric films with a composition gradient have attracted much attention because of their large polarization offset present in the hysteresis loops. Lead Zirconate Titanate (PZT) films were deposited on Pt/TiO2/SiO2/Si substrates by Pulsed Laser Deposition (PLD) technique, using a Nd:YAG laser (Surelite) with a source pulse wavelength of 1064 nm and duration of 5-7 ns delivering an energy of 320 mJ per pulse and a laser fluence energy about 20 J/cm2. The film growth is performed in O2 atmosphere (0,40 mbar) while the substrate is heated at 600°C by a quartz lamp. Starting from ceramic targets based on PZT compositions and containing 5% mol. of excess of PbO to compensate the lead evaporation during heat treatment, three films with different compositions Zr/Ti 55/45, 65/35 and 92/8, and two types of complex structures were produced. These complex structures are in the case of the up-graded structure (UpG), with PZT (92/8) at the bottom, PZT (65/35) on middle and PZT (55/45) on the top, and for down-graded (DoG) one, that order is reversed.


1991 ◽  
Vol 58 (25) ◽  
pp. 2910-2912 ◽  
Author(s):  
Hideo Kidoh ◽  
Toshio Ogawa ◽  
Akiharu Morimoto ◽  
Tatsuo Shimizu

Sign in / Sign up

Export Citation Format

Share Document