Thickness Dependence of Induced Ferroelectricity in Epitaxially Grown Ba0.44Sr0.56TiO3 Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Kazuhide Abe ◽  
Shuichi Komatsu
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Magnetron Sputtering ◽  
Lattice Constant ◽  
Rf Magnetron Sputtering ◽  
Thickness Dependence ◽  
Thickness Direction ◽  
Deposition Technique ◽  
Bst Films

ABSTRACTBa0.44Sr0.56TiO3 (BST) thin films with various thicknesses were epitaxially grown on Pt/MgO(100) substrates with rf magnetron sputtering. The thickness dependence of lattice constant, D-E hysteresis and dielectric constant were evaluated for the BST films. The lattice constant in the thickness direction is elongated through the thickness range (33 to 221 nm), whereas the ferroelectric and the dielectric properties had strong thickness dependencies. The mechanism of the induced ferroelectricity is discussed in terms of the thickness dependence and deposition technique.

The Investigations of Dielectric Properties of BaTiO3 Thin Films on Polycrystalline Pt Substrates by Rf Magnetron Sputtering

1996 ◽  
Vol 433 ◽  
Author(s):  
Jin Wook Jang ◽  
Woon Jo Cho ◽  
Taek Sang Hahn ◽  
Sang Sam Choi ◽  
Su Jin Chung
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Room Temperature ◽  
Strong Dependence ◽  
Hysteresis Loops ◽  
Rf Magnetron Sputtering ◽  
Thickness Dependence ◽  
Grain Sizes

AbstractThickness dependence of ferroelectric and structural properties of BaTiO3 thin films were investigated. Stoichiometric BaTiO3 thin films were prepared by off-axis rf magnetron sputtering on polycrystalline Pt substrates at 700°C. Film thickness range was 2,100–20,000Å. Room temperature permittivity, frequency dependence of permittivity, and D-E hysteresis loops were measured and lattice parameters were determined as a function of the film thickness. It has been found that these properties had the strong dependence on film thickness, which was mainly due to grain sizes of BaTiO3 thin films. The main cause of thickness dependence of dielectric properties was thought to be crystallinity and stresses of thin films which is resulted from changes in grain sizes.

Dielectric Properties of Nanocrystalline Barium Titanate Thin Films Deposited by RF Magnetron Sputtering

2003 ◽  
Vol 42 (Part 1, No. 2A) ◽  
pp. 544-548 ◽  
Author(s):  
Chi-Shiung Hsi ◽  
Fu-Yuan Hsiao ◽  
Nan-Chung Wu ◽  
Moo-Chin Wang
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Barium Titanate ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering

Dielectric properties of La/Mn codoped Ba0.63Sr0.37TiO3 thin films prepared by RF magnetron sputtering

2014 ◽  
Vol 40 (8) ◽  
pp. 12573-12577 ◽  
Author(s):  
Lirong Song ◽  
Ying Chen ◽  
Genshui Wang ◽  
Lihui Yang ◽  
Tao Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering

The Preparation of ZnO: Al Thin Films on Flexible Substrates by Magnetron Sputtering Method

2014 ◽  
Vol 989-994 ◽  
pp. 65-68
Author(s):  
Xiao Jing Wang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Compressive Stress ◽  
Lattice Constant ◽  
Rf Magnetron Sputtering ◽  
Hexagonal Structure ◽  
Preferred Orientation ◽  
Flexible Substrates ◽  
Average Transmittance

ZnO: Al film was deposited on TPT substrate with SiO2 buffer layer by RF magnetron sputtering. The obtained film had a hexagonal structure and highly (002) preferred orientation. The lattice constant distortion of the film with buffer layer was decreased and the compressive stress was 0.779GPa. The carrier concentratio reached to 3.15×10+20/cm3. The resistivity of ZAO film with SiO2 buffer layer was about 9.2×10-3 Ω·cm and the average transmittance was over 72% in the range of 380~900nm.

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