Preparation of PbZrxTi1−xO3 Films on Si Substrates Using SrTiO3 Buffer Layers

1994 ◽  
Vol 361 ◽  
Author(s):  
Eisuke Tokumitsu ◽  
Kensuke Itani ◽  
Bum-Ki Moon ◽  
Hiroshi Ishiwara
Keyword(s):  
Buffer Layer ◽  
Secondary Ion Mass Spectrometry ◽  
Sol Gel ◽  
Buffer Layers ◽  
Si Substrates ◽  
Pzt Film ◽  
Pzt Films ◽  
Evaporation Technique ◽  
Gel Technique ◽  
Secondary Ion

ABSTRACTWe report the preparation of PbZrxTi1−xO3 (PZT) films on Si substrates with a SrTiO3 (STO) buffer layer. STO buffer layers and PZT films were formed on Si substrates by the electron-beam assisted vacuum evaporation technique and sol-gel technique, respectively. By evaporating a thin (8nm) metal Sr layer prior to the STO deposition, which deoxidizes the SiO2 layer at the Si surface, (100)- and (111)-oriented STO thin films can be grown on Si(100) and (111) substrates, respectively. It is shown that a strongly (100)-oriented PZT film is grown on STO(100)/Si(100), whereas a strongly (111)-oriented PZT film is obtained on STO(111)/Si(111). It is also found that the STO buffer layer remains intact even after the PZT deposition. Secondary ion mass spectrometry (SIMS) analysis showed that the STO barrier layer was effective in preventing diffusion of Pb into the Si substrate.

Oxygen Tracer Diffusion in Sol-Gel Derived Pb(Zr,Ti)O3 thin Films

1993 ◽  
Vol 310 ◽  
Author(s):  
John J. Vajo ◽  
L.A. Momoda ◽  
S.B. Wong ◽  
G.S. Kamath
Keyword(s):  
Thin Films ◽  
Oxygen Diffusion ◽  
Sol Gel ◽  
Finite Thickness ◽  
Tracer Diffusion ◽  
Pzt Films ◽  
Gel Technique ◽  
Low Levels ◽  
Secondary Ion ◽  
Oxygen Tracer

AbstractWe have studied oxygen diffusion in thin films of Pb(Zr,Ti)O3 on Pt/Ti/SiO2/Si <100> multilayer substrates using 18O as a tracer. The PZT films were synthesized using the sol-gel technique and crystallized in air at 650° C for 30 minutes. Diffusion experiments were conducted in one atmosphere of 18O2 at tmipertures between 400-600°C, the extent of exchange was monitored using secondary ion mass spectromentry. Exchange profiles were modeled using solutions of the diffusion equation with boundary conditions for a layer with finite thickness. Significant exchange (>60%) of 16O by 18O was measured after treatment under conditions similar to those used for crystallization. At low levels of exchange, oxygen diffusion does not follow a simple Fickian profile and differences exist between nominally identical films. These results suggest that oxygen exchange is sensitive to the film's microstructure.

Effects of lanthanum nitrate buffer layer on the orientation and piezoelectric property of Pb(Zr,Ti)O3 thick film

2004 ◽  
Vol 19 (12) ◽  
pp. 3671-3678 ◽  
Author(s):  
Jong-Jin Choi ◽  
Gun-Tae Park ◽  
Chee-Sung Park ◽  
Jae-Wung Lee ◽  
Hyoun-Ee Kim
Keyword(s):  
Piezoelectric Property ◽  
Buffer Layer ◽  
Thick Films ◽  
Sol Gel ◽  
Lanthanum Nitrate ◽  
Si Substrates ◽  
Pzt Film ◽  
Heat Treated ◽  
Coating Method ◽  
Ferroelectric Hysteresis

Highly oriented Pb(Zr,Ti)O3 (PZT) films were deposited on Pt/Ti/SiO2/Si substrates by the sol-gel method using lanthanum nitrate as a buffer layer. When the lanthanum nitrate buffer layer was heat treated at temperatures between 450 and 550 °C, the PZT layer coated onto this buffer layer showed a strong (100) preferred orientation. Regardless of the other deposition conditions, such as the pyrolysis temperature, pyrolysis time, annealing temperature and heating rate, the film deposited on the buffer layer had this orientation. Thick films were also fabricated using the sol-gel multi-coating method, and the (100) texture was found to be maintained up to a thickness of 10 μm. The ferroelectric hysteresis and piezoelectric coefficient (d33) of highly oriented PZT thick films were characterized, and the (100) oriented PZT film showed higher piezoelectric property than the (111) oriented film.

Effect of Substrate-induced Strains on Ferroelectric and Dielectric Properties of PZT Films Prepared by Sol-Gel Technique

2020 ◽  
Vol 10 ◽  
Author(s):  
Hamed A. Gatea
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Lead Zirconate Titanate ◽  
Perovskite Structure ◽  
Room Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pzt Film ◽  
Pzt Films ◽  
Gel Technique

Background: Lead Zirconate Titanate (PZT) films were synthesized by sol gel technique. The growth of films on ITO, Si\SiO2\Ti\Au, Si\Au and Si\SiO2\Ti\Al substrates discussed. In this study, Zirconium nitrate, lead acetate, and Ti (IV) isoproxide used as raw materials. Besides, acetic acid used as a solvent and 2-methoxy ethanol used as a stabilizer for Ti structure. Along with this, PZT films have perovskite structure, thin-film perovskite structure with high dielectric properties and hysteresis loop have been investigated. Methods: The effects of the type’s substrate on dielectric properties the ferroelectric properties were investigated and compared PZT film which deposited in different substrates. The films annealed at 600 C to complete crystalline films. XRD shows tetragonal PZT films have a strong perovskite structure with [100] prefer plane orientation. SEM and crosssection technique used to study for PZT surface films. Results: The dielectric constant at room temperature was different values depending on the types of substrate. The dielectric properties of the PZT films measured at 1 kHz were 120-400 dielectric constant and dielectric loss 0.02-0.08 at room temperature and 1 kHz. Conclusion: The largest remnant polarization (Pr) and coercive field (Ec) are obtained for PZT film deposited on Si\SiO2\Ti\Au substrate, equal to 26.6 mC/cm2 and 38.3 kV/cm, as compared to 16.3 mC/cm2 and 32.2 kV/cm2 for PZT film deposited on ITO substrate.

Orientation control of sol-gel-derived lead zirconate titanate film by addition of polyvinylpyrrolidone

2005 ◽  
Vol 20 (4) ◽  
pp. 882-888 ◽  
Author(s):  
Gun-Tae Park ◽  
Chee-Sung Park ◽  
Jong-Jin Choi ◽  
Hyoun-Ee Kim
Keyword(s):  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Organic Residues ◽  
Si Substrates ◽  
Pzt Film ◽  
Oriented Film ◽  
Zirconate Titanate ◽  
Nucleation Sites ◽  
Pzt Films

Highly (100)- and (111)-oriented lead zirconate titanate (PZT) films with a thickness of 350 nm were deposited on platinized Si substrates through a single spinning of a PZT sol containing polyvinylpyrrolidone (PVP) as an additive. The crystallographic orientation of the film was strongly influenced by pyrolysis conditions after spin coating. When the spin-coated sol was pyrolyzed at temperatures above 320 °C for relatively long periods of time (>5 min), (111)-oriented film was formed after annealing at 700 °C for 10 min. On the other hand, when the same sol was pyrolyzed at 320 °C for short periods of time (<5 min), the film was strongly oriented to the (100) direction after annealing. Organic residues derived from PVP decomposition acted as nucleation sites for the (100) oriented grains during annealing after the pyrolysis. The effective d33 of the (100)-oriented PZT film (100 pC/N) was much higher than that of the (111)-oriented film (62 pC/N) with the same thickness.

In-Situ Study of NiO Growth on Textured Nickel Tape Using Environmental Scanning Electron Microscope (ESEM) and Hot Stage

2001 ◽  
Vol 7 (S2) ◽  
pp. 1276-1277
Author(s):  
Y. Akin ◽  
R.E. Goddard ◽  
W. Sigmund ◽  
Y.S. Hascicek
Keyword(s):  
Buffer Layer ◽  
Lattice Mismatch ◽  
Sol Gel ◽  
Surface Oxidation ◽  
Dip Coating ◽  
Buffer Layers ◽  
Superconducting Film ◽  
Environmental Scanning ◽  
Cold Rolling And Annealing

Deposition of highly textured ReBa2Cu3O7−δ (RBCO) films on metallic substrates requires a buffer layer to prevent chemical reactions, reduce lattice mismatch between metallic substrate and superconducting film layer, and to prevent diffusion of metal atoms into the superconductor film. Nickel tapes are bi-axially textured by cold rolling and annealing at appropriate temperature (RABiTS) for epitaxial growth of YBa2Cu3O7−δ (YBCO) films. As buffer layers, several oxide thin films and then YBCO were coated on bi-axially textured nickel tapes by dip coating sol-gel process. Biaxially oriented NiO on the cube-textured nickel tape by a process named Surface-Oxidation- Epitaxy (SEO) has been introduced as an alternative buffer layer. in this work we have studied in situ growth of nickel oxide by ESEM and hot stage.Representative cold rolled nickel tape (99.999%) was annealed in an electric furnace under 4% hydrogen-96% argon gas mixture at 1050°C to get bi-axially textured nickel tape.

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

Deposition of Highly (100) Oriented PZT Film Using Lanthanum Nitrate/Nickel Acetate Buffer Layer

2005 ◽  
Vol 902 ◽  
Author(s):  
Jong-Jin Choi ◽  
Byung-Dong Hahn ◽  
Joo-Hee Jang ◽  
Woon-Ha Yoon ◽  
Dong-Soo Park ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Intermediate Phase ◽  
Lanthanum Nitrate ◽  
Nickel Acetate ◽  
Acetate Buffer ◽  
Double Layers ◽  
Glass Substrates ◽  
Lanthanum Nickel Oxide ◽  
Pzt Film ◽  
Pzt Films

AbstractHighly (100) oriented Pb(Zr,Ti)O3 [PZT] films were fabricated using lanthanum nitrate/nickel acetate double layers as a buffer layer, regardless of the other deposition conditions, such as the pyrolysis temperature, pyrolysis time, annealing temperature, and heating rate. The buffer layer was also acted as a very effective barrier against Pb-Si interdiffusion, thus allowing for the direct deposition of PZT films on Si, SiO2/Si, and glass substrates. The strong orientation was attributed to the formation of a crystalline intermediate phase between the PZT and lanthanum nitrate during annealing. The lanthanum nitrate/nickel acetate double layers became a lanthanum nickel oxide (LaNiO3), which shows good electrical conductivity, after an annealing process at 650°C. The nature and the role of lanthanum nitrate buffer as a layer for the growth of highly (100) oriented PZT films have been studied. The dielectric, ferroelectric, piezoelectric and electrooptic properties of the highly (100) oriented PZT films with a lanthanum nitrate/nickel acetate buffer layer were measured and compared with the values measured from the (111) and (100) oriented PZT films deposited without buffer layer.

Fabrication of Thick, Sol Gel Pzt Films: Applications to Macroscopic Piezoelectric Devices

1994 ◽  
Vol 360 ◽  
Author(s):  
D.A. Barrow ◽  
T.E. Petroff ◽  
M. Sayer
Keyword(s):  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Low Frequency ◽  
Lead Zirconate ◽  
Resonant Vibrations ◽  
Pzt Film ◽  
Sol Gel Process ◽  
Pzt Films ◽  
High Frequency Resonance ◽  
Piezoelectric Devices

AbstractLead zirconate titanate (PZT) films of up to 60 μm in thickness have been fabricated on a wide variety of substrates using a new sol gel process. The dielectric properties (∈ = 900), ferroelectric (Ec = 16 kV/cm and Pr = 35 μC/cm 2) and piezoelectric properties are comparable to bulk values. The characteristic Curie point of these films is at 420 °C. Piezoelectric actuators have been developed by depositing thick PZT films on both planar and coaxial substrates. Stainless steel cantilevers and optical fibres coated with a PZT film exhibit flexure mode resonant vibrations observable with the naked eye. A low frequency in-line fibre optic modulator has been developed using a PZT coated optical fibre. The high frequency resonance of a 60 μm film on a aluminum substrate has been observed.

Influence of Bi3.15Nd0.85Ti3O12 Buffer Layer on Structure and Electrical Properties of Bi0.94Ce0.06Fe0.97Ti0.03O3 Thin Films

2014 ◽  
Vol 703 ◽  
pp. 51-55
Author(s):  
Jia Zeng ◽  
Ming Hua Tang ◽  
Zhen Hua Tang ◽  
Yong Guang Xiao ◽  
Long Peng ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Current Density ◽  
Coercive Field ◽  
Remnant Polarization ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Sol Gel Process

Bi0.94Ce0.06Fe0.97Ti0.03O3 and Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films were fabricated via sol-gel process on Pt/Ti/SiO2/Si substrates. The influence of Bi3.15Nd0.85Ti3O12 buffer layer on microstructure and electrical properties of Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films were investigated in detail. Well-saturated P-E hysteresis loops can be obtained in Bi0.94Ce0.06Fe0.97Ti0.03O3 films with Bi3.15Nd0.85Ti3O12 buffer. The remnant polarization (2Pr) of the double-layered thin films is 112 μC/cm2. The coercive field (2Ec) of double-layered films is 672 kV/cm, which is much lower than that of the Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films. The leakage current density of Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films is 4.12×10-5 A/cm2.

Sign in / Sign up

Export Citation Format

Share Document