Effect of Microstructure on the Electrical Characteristics of Sol-Gel Derived PZT Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Jiyoung Kim ◽  
Rajesh Khamankar ◽  
Bo Jiang ◽  
Papu Mamar ◽  
Reza Moazzami ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electrical Properties ◽  
Material Properties ◽  
Sol Gel ◽  
Preferred Orientation ◽  
Electrical Characteristics ◽  
Pzt Thin Films ◽  
Sem Micrographs ◽  
Different Grain Size

ABSTRACTThe effects of the microstructure of PZT sol-gel thin films, processed using different solutions, on their material and electrical properties have been studied. The films have different degrees of preferred orientation of the perovskite crystals as well as different grain size. The material characteristics are evaluated using SEM micrographs and XRD. Correlation of these material properties with the electrical properties for both NVRAM and DRAM applications is made.

Preparation and Electrical Characteristics of (100), (111), and Randomly Oriented PZT Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Chang Jung Kim ◽  
Dae Sung Yoon ◽  
Joon Sung Lee ◽  
Chaun Gi Choi ◽  
Won Jong Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Test System ◽  
Electrical Characteristics ◽  
Pzt Thin Films ◽  
Pole Figures ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Drying Conditions

ABSTRACTThe (100), (111) and randomly oriented PZT thin films were fabricated on Pt/Ti/Coming 7059 glass using sol-gel method. The thin films having different orientation were fabricated by different drying conditions for pyrolysis. The preferred orientations of the PZT thin films were observed using XRD, rocking curves, and pole figures. The microstructures were investigated using SEM. The hysteresis loops and capacitance-voltage characteristics of the films were investigated using a standardized ferroelectric test system. The dielectric constant and current-voltage characteristics of the films were investigated using an impedance analyzer and pA meter, respectively. The films oriented in a particular direction showed superior electrical characteristics to the randomly oriented films.

Effect of Lead Content on the Microstructure and Electrical Properties of Sol-Gel PZT Thin Films

2002 ◽  
Vol 271 (1) ◽  
pp. 51-56 ◽  
Author(s):  
P. V. Burmistrova ◽  
A. S. Sigov ◽  
A. L. Vasiliev ◽  
K. A. Vorotilov ◽  
O. M. Zhigalina
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Lead Content ◽  
Pzt Thin Films

Control of Grain Size of Pb(Zr,Ti)O3 Thin Films by MOCVD and the Effect of Size on the Electrical Properties

1998 ◽  
Vol 541 ◽  
Author(s):  
H. Fujisawa ◽  
S. Nakashima ◽  
M. Shimizu ◽  
H. Niu
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Grain Size ◽  
Electrical Properties ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Dielectric Constants ◽  
Pzt Thin Films ◽  
Pzt Films

AbstractThe grain size of MOCVD-Pb(Zr,Ti)O3 (PZT) thin films was successfully controlled by changing the grain size of Ir bottom electrodes and by changing the growth rate of PZT films. In Ir/PZT/Ir/SiO2/Si capacitors, the grain size of PZT thin films increased from 120 to 240nm as the grain size of bottom Ir electrodes increased from 50 to 200nm. The dielectric constants of PZT thin films increased from 760 to 1440 as the grain size increased from 120 to 240nm. Remanent polarization increased and coercive field decreased as the grain size increased. This dependence of electrical properties on the grain size coincided with that of ceramics.

Influence of Geometrical Parameters on the Electrical Properties of Ferroelectric Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
S.P. Faure ◽  
P. Gaucher ◽  
J.P. Ganne
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Mean Value ◽  
Ferroelectric Thin Films ◽  
Geometrical Parameters ◽  
Electrical Characteristics ◽  
Electrode Size ◽  
Sol Gel Process

AbstractFerroelectric thin films of PbZr0.5Ti0.5O3 were prepared by sol-gel process. Top electrodes of different sizes were deposited on thin films in order to study their influence on electrical properties. Histograms of the measured electrical characteristics are related to the electrode sizes. By reducing the electrode size, it is possible to improve the electrical properties of the film. Various properties, such as remanent polarization Pr and coercive voltage Vc, were measured statistically in order to show the evolution of their mean value and of their variance with the electrode size.

scholarly journals Robust ferroelectricity enhancement of PZT thin films by a homogeneous seed layer

2021 ◽  
Author(s):  
jie jiang ◽  
Lei Liu ◽  
Kuo Ouyang ◽  
Zhouyu Chen ◽  
Shengtao Mo ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Remanent Polarization ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Large Dielectric Constant ◽  
Sol Gel Process ◽  
A New Technique

Abstract With its excellent ferroelectric properties such as large dielectric constant and large remanent polarization, PZT thin films are extensively used in micro-sensors and other devices. In this study, the sol-gel process was used to fabricate Pb(Zr0.52Ti0.48)O3 thin films with Pb(ZrxTi1−x)O3 seed islands. The experimental consequences demonstrate that all the Pb(Zr0.52Ti0.48)O3 thin films with Pb(ZrxTi1−x)O3 seeds show pure perovskite phase with no other impurity phases, and the electrical properties of Pb(Zr0.52Ti0.48)O3 thin films modified by Pb(ZrxTi1−x)O3 seed islands with different Zr/Ti ratios are improved, such as remanent polarization increased, dielectric properties increased, coercive electric field decreased, leakage current density decreased, etc. In particular, the electrical properties of the Pb(Zr0.52Ti0.48)O3 thin films with Pb(ZrxTi1−x)O3 seed islands are the most optimal when the x is 0.52. This paper provides a new technique for optimizing the electrical properties of PZT thin films, which is of great significance for breaking through the bottleneck of the development of ferroelectric memory.

Improvement of Ferroelectric and Electrical Properties of Sol-Gel deposited Bi4Ti3Oi2 Thin Films by Multiple Rapid Thermal Annealing Techniques

2004 ◽  
Vol 830 ◽  
Author(s):  
Hua. Wang ◽  
Minfang Ren
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Annealing Temperature Increase ◽  
Si Substrates ◽  
Surface Increase

AbstractFerroelectric Bi4Ti3O12 thin films were fabricated by sol-gel method with multiple rapid thermal annealing (MRTA) techniques on Pt/Ti/SiO2/p-Si substrates. The effect of annealing temperature on crystallinity, ferroelectric and electrical properties of Bi4Ti3O12 films derived by MRTA and by normal RTA were investigated. The results reveal that the grain size and the roughness of surface increase with the annealing temperature increase, but the maximal remnant polarization of Bi4Ti3O12

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