SrTiO3 Films Prepared by MOCVD Using Novel Sr Source

1994 ◽  
Vol 361 ◽  
Author(s):  
Hideaki Yamauchi ◽  
Takafumi Kimura ◽  
Masao Yamada
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Thick Films ◽  
Relative Dielectric Constant ◽  
Si Substrates ◽  
Vaporization Temperature

ABSTRACTSrTiO3 thin films have been prepared by MOCVD. A novel Sr source of Sr(DPM)2-tetraen2 was used to stabilize source delivery and to reduce the vaporization temperature of Sr source. Films were deposited on Pt/Ta/Si substrates at deposition temperatures from 450 °C to 600 °C. The relative dielectric constant was about 220 at the deposition temperatures from 550 °C to 600 °C for as-deposited 90-nm-thick films. The leakage current density was in the range of 10−7 A/cm2, typically.

scholarly journals Application of Amorphous Zirconium-Yttrium-Aluminum-Magnesium-Oxide Thin Film with a High Relative Dielectric Constant Prepared by Spin-Coating

Membranes ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 608
Author(s):  
Huiyun Yang ◽  
Zhihao Liang ◽  
Xiao Fu ◽  
Zhuohui Xu ◽  
Honglong Ning ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Magnesium Oxide ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Relative Dielectric Constant ◽  
Oxide Thin Film ◽  
Yttrium Aluminum

Amorphous metal oxide has been a popular choice for thin film material in recent years due to its high uniformity. The dielectric layer is one of the core materials of the thin film transistor (TFT), and it affects the ability of charges storage in TFT. There is a conflict between a high relative dielectric constant and a wide band gap, so we solved this problem by using multiple metals to increase the entropy of the system. In this paper, we prepared zirconium-yttrium-aluminum-magnesium-oxide (ZYAMO) dielectric layers with a high relative dielectric constant using the solution method. The basic properties of ZYAMO films were measured by an atomic force microscope (AFM), an ultraviolet-visible spectrophotometer (UV-VIS), etc. It was observed that ZYAMO thin films had a larger optical band when the annealing temperature increased. Then, metal-insulator-metal (MIM) devices were fabricated to measure the electrical properties. We found that the leakage current density of the device is relatively lower and the ZYAMO thin film had a higher relative dielectric constant as the concentration went up. Finally, it reached a high relative dielectric constant of 56.09, while the leakage current density was no higher than 1.63 × 10−6 A/cm2@ 0.5 MV/cm at 1.0 M and 400 °C. Therefore, the amorphous ZYAMO thin films has a great application in the field of high permittivity request devices in the future.

Electrical and Structural Properties of SrTiO3 Thin Films Deposited by Plasma-enhanced Metalorganic Chemical Vapor Deposition

1997 ◽  
Vol 12 (4) ◽  
pp. 1160-1164 ◽  
Author(s):  
Nam-Kyeong Kim ◽  
Soon-Gil Yoon ◽  
Won-Jae Lee ◽  
Ho-Gi Kim
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electric Field ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Chemical Vapor ◽  
Dissipation Factor ◽  
Si Substrates ◽  
Capacitance Voltage

The microstructure and electrical properties were investigated for SrTiO3(STO) thin films deposited on Pt/Ti/SiO2/Si substrates by PEMOCVD. The SrF2 phase existing in the STO films deposited at 450 °C influences the dielectric constant, dissipation factor, and leakage current density of STO films. The dielectric constant and dissipation factor of STO films deposited at 500 °C were 210 and 0.018 at 100 kHz, respectively. STO films were found to have paraelectric properties from the capacitance-voltage characteristics. Leakage current density of STO films at 500 °C was about 1.0 × 10-8 A/cm2 at an electric field of 70 kV/cm. The leakage current behaviors of STO films deposited at 500 and 550 °C were controlled by Schottky emission with applied electric field.

Preparation and Characterization Of SrTio3 Thin Films Using ECR Plasma Assisted MOCVD

1995 ◽  
Vol 415 ◽  
Author(s):  
Joon Sung Lee ◽  
Han Wook Song ◽  
Dae Sung Yoon ◽  
Byung Hyuk Jun ◽  
Byoung Gon Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Oxygen Plasma ◽  
Grain Structure ◽  
Breakdown Field ◽  
Ecr Plasma ◽  
Step Coverage

ABSTRACTSrTiO3 thin films were prepared on Si(p-type 100) and Pt/SiO2/Si substrates using ECR plasma (or without ECR plasma) assisted MOCVD. Sr(TMI-D)2 and Ti-isopropoxide were used as Sr and Ti metal organic sources, respectively. Perovskite SrTiO3 films were obtained at relatively low temperature of 500°C (using ECR oxygen plasma. Experimental results indicated that higher deposition temperature and ECR oxygen plasma increase the crystallinity, the dielectric constant and the leakage current density. The dielectric constant and the dielectric loss were 222 and 0.04, respectively, for 1234 Å thin SrTiO3 film (Sr/(Sr+Ti)=0.5). The leakage current density was 3.78 × 10−7 A/cm2 at 1.0V, and the dielectric breakdown field was 0.57MV/cm. SEM analyses showed that SrTiO3 films have a uniform and fine grain structure. In terms of step coverage, a lateral step coverage of 50% at 0.8 μm step (the aspect ratio was 1) was obtained with the thickness uniformity of ± 0.5% and the composition uniformity of ±1.2% at 4′′ wafer.

Preparation and Characterization of (Sr1−xTix)O3 and (Ba1−xSrx)TiO3 Thin Films using ECR Plasma Assisted MOCVD

1996 ◽  
Vol 433 ◽  
Author(s):  
Kwangsoo No ◽  
Joon Sung Lee ◽  
Han Wook Song ◽  
Won Jong Lee ◽  
Byoung Gon Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Dielectric Loss ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Breakdown Field ◽  
Carrier Gas ◽  
Ecr Plasma

AbstractBa(TMHD)2, Sr(TMHD)2 and Ti-isopropoxide were used to fabricate the (SrxTi1 x)O3 and (Ba1 x Srx)TiO3 thin films. The decomposition and degradation characteristics of Ba(TMHD)2 and Sr(TMHD)2 with storage time were analyzed using a differential scanning calorimeter (DSC). The thin films were fabricated on Si(p-type 100) and Pt/SiO2/Si substrates with Ar carrier gas using ECR plasma (or without ECR plasma) assisted MOCVD. Experimental results showed that the ECR oxygen plasma increased the deposition rate, the ratio of Sr/Ti, the dielectric constant and the leakage current density of the film. The dependency of the crystallinity and the electrical properties on the Sr/Ti ratio of films were investigated. However, almost of the films deposited with Ar carrier gas had slightly high dielectric loss and high leakage current density and showed non-uniform compositional depth profiles. NH3 gas was also used to decrease the degradation of the MO-sources. Mass spectra in-situ monitoring of source vapors in ECR-PAMOCVD system were obtained. By introducing NH3 as a carrier gas, a significant improvement was achieved in the volatility and the thermal stability of the precursors, and the vaporization temperatures of the precursors were reduced compared to Ar carrier gas. The uniform compositional depth profile, less hydrogen and carbon content and the good electrical properties of (SrxTi1−x)O3 thin films were obtained with NH3 carrier gas. The (Ba1−xSrx)TiO3 thin film were fabricated to have very fine and uniform microstructure, the dielectric constant of 456, the dielectric loss of 0.0128, the leakage current density of 5.01 × 10−8A/cm2 at 1V and the breakdown field of 3.65MV/cm.

Structural and Electrical Properties of BaTio3 Thin Films Grown on p-Si Substrates with Different Device Designs

1993 ◽  
Vol 318 ◽  
Author(s):  
L. H. Chang ◽  
Q. X. Jia ◽  
W. A. Anderson
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Leakage Current ◽  
Single Layer ◽  
Relative Dielectric Constant ◽  
Rf Magnetron Sputtering ◽  
Phonon Modes ◽  
Si Substrates ◽  
Low Leakage ◽  
Low Leakage Current

ABSTRACTRF magnetron sputtering of BaTiO3 on (100) p-Si was performed to produce a high-quality BaTiO3/p-Si interface and BaTi03 insulator gates with high dielectric constant and low leakage current. Through different processing and device designs, different capacitor structures, including single layer amorphous, single layer polycrystalline and bi-layer amorphous on polycrystal-line, were investigated in this study. Raman spectroscopy showed the optical phonon modes of the BaTiO3 thin films with different structures. The structural properties of the films were characterized by X-ray diffraction. Using both the quasistatic and the high-frequency capacitance-voltage measurements, the interface-trap density was estimated at high 1011 eV−1 cm−2. The relative dielectric constant of the composite structure was controlled in a range from 30 to 130. The leakage current density was as low as 8×10−10 A/cm2 at a field intensity of (2±0.5)×105 V/cm. Breakdown voltage varied from 5x105 to 2×106 V/cm.

Orientation Control and Dielectric Properties of Ba0.6Sr0.4TiO3 Thin Films on Pt/Ti/SiO2/Si Substrates with PbO Seeding Layer

2013 ◽  
Vol 741 ◽  
pp. 11-17
Author(s):  
Xiao Hua Sun ◽  
Ya Xia Qiao ◽  
Shuang Hou ◽  
Ying Yang ◽  
Cai Hua Huang
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Precursor Solution ◽  
Seeding Layer ◽  
Bst Thin Films ◽  
Si Substrates ◽  
Bst Thin Film

Ba0.6Sr0.4TiO3 (BST) thin films were fabricated by solgel technique on Pt/Ti/SiO2/Si substrate without and with PbO seeding layer from precursor solutions with different concentrations. The crystal structure, surface morphology, dielectric properties and leakage current density of BST thin films are investigated as functions of the concentration of PbO precursor solution. Its found that the growth orientation of BST thin films with PbO seeding layer can be modulated through adjusting the concentration of PbO precursor solution. BST thin film with PbO seeding layer from 0.05 M precursor solution shows the highest dielectric constant and tunability, which may be attributed to the high crystallization and amplitude of the polarization in high (100) preferred orientated films. The leakage current density of BST films increases with the increasing concentration of PbO precursor solution and agrees well with the space-charge-limited current mechanism at room temperature.

Enhancement of the Electrical Properties of BaTiO3 Films on GaAs Using Double Layer Structures

1994 ◽  
Vol 361 ◽  
Author(s):  
L.H. Chang ◽  
W.A. Anderson
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Charge Density ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Double Layer ◽  
Current Density ◽  
Dielectric Constants ◽  
Oxide Charge

ABSTRACTFerroelectric BaTiO3 thin films have been directly deposited on n-GaAs with carrier concentration of 5.3–8.2×1017/cm2. The BaTiO3 thin films with a thickness in the range of 80–120 nm were prepared by RF magnetron sputtering with a substrate temperature of 300°C. The as-deposited BaTiO3 films appeared to be amorphous with relative dielectric constants of around 15 and gave flat capacitance-voltage (C-V) curves, indicating poor interface properties and very high oxide charge density. After rapid thermal annealing (RTA) at 800°C for 60 sec, the relative dielectric constant of the BaTiO3 film increased to 82 and a sharp C-V curve was observed with oxide charge density of about 7×1012/cm2. However, the leakage current density increased from 4×10'11 A/cm2 for as-deposited BaTiO3 to 2×105 A/cm2 for RTA(800°C)-BaTiO3 at a field of 4×105 V/cm. By taking advantage of the best properties from both as-deposited amorphous BaTiO3 films (low leakage current density) and RTA(800°C)-BaTiO3 (high dielectric constant) the double layer structure was designed to enhance the electrical properties of the BaTiO3 films on GaAs. The most promising results in regards to the dielectric property and leakage current density are 76.5 and 9.7×109 A/cm2, respectively, for the double layer RTA(500°C)-BaTiO3 on RTA(800°C)-BaTiO3 structures.

Electrical and Dielectric Characteristics of SrTiO3 Thin Films Grown by PE-MOCVD Technique

1993 ◽  
Vol 335 ◽  
Author(s):  
Z. Q. Shi ◽  
C. Chern ◽  
S. Liang ◽  
Y. Lu ◽  
A. Safari
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Loss ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Room Temperature ◽  
Bottom Electrode ◽  
Electrode Materials ◽  
Mocvd Technique

AbstractEpitaxial strontium titanate (SrTiO3) thin films have been grown by plasma enhanced metalorganic chemical vapor deposition (PE-MOCVD) technique on different bottom electrode materials, such as Pt/MgO and YBCO/LaAlO3. The as grown SrTiO3 film exhibited an epitaxial structure with <100> orientation perpendicular to the substrates as examined by X-ray diffraction (XRD). The electrical and dielectric properties of the films were investigated by capacitance-voltage (C-V) and current-voltage (I-V) measurements in a temperature range from 80K to 300K. The dielectric constant and dielectric loss were found to be 320 and 0.08 at 100 kHz and room temperature. The dc leakage current density and breakdown voltage were strongly dependent on the choice of the bottom electrode materials. For the films grown on YBCO/LaAlO3, the leakage current density is 8.8×10−7 A/cm2 at 200 kV/cm and the breakdown voltage is about 2.0 MV/cm. These results indicated that the SrTiO3 films are suitable for many devices applications. The frequency dependence of the dielectric constant and dielectric loss were studied in the range of 12 Hz to 1 MHz at room temperature. With the increase of the frequency, the dielectric constant showed a little decrease, while the dielectric loss exhibited a sharp increase which could be attributed to the electrode resistance loss.

The Electrical and Physical Properties of (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films under Conventional Annealing Process

2010 ◽  
Vol 434-435 ◽  
pp. 271-274
Author(s):  
Kai Huang Chen ◽  
Cheng Fu Yang ◽  
Chien Chen Diao
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Physical Properties ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
X Ray Diffraction ◽  
Maximum Dielectric Constant ◽  
Xrd Patterns ◽  
Conventional Annealing

In this study, conventional furnace annealing (CFA) is used as the post-treated process, the effects of annealing temperatures on the crystallization and microstructure of (Ba0.7Sr0.3)(Ti0.9 Zr0.1)O3 (BSTZ) thin films will be developed, and the further influences on the electrical properties of BSTZ thin films are also investigated. A previous study made in our laboratory had shown that the dielectric constant and leakage current density of BSTZ thin film with 640 nm thickness are 192 and 10-6 A/cm2 under the frequency of 100 KHz, respectively. However, the maximum dielectric constant and minimum leakage current density of BSTZ thin films under CFA process are 420 (annealed at 800oC) and 10-8 A/cm2 (700oC), respectively. Besides, the X-ray diffraction (XRD) patterns and the SEM morphology show that crystalline features and grain size of BSTZ thin films increase with the increase of CFA-treated temperatures. These experiment results suggest that a strong correlation exhibits that the physical properties will influence the dielectric properties and nucleation features of BSTZ thin films.

Leakage Current Behavior in CaZrO3 Thin Films for High-k Applications

2004 ◽  
Vol 811 ◽  
Author(s):  
Ting Yu ◽  
Weiguang Zhu ◽  
Xiaofeng Chen ◽  
Yuekang Lu
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Electric Fields ◽  
Current Density ◽  
Breakdown Strength ◽  
Sol Gel ◽  
High K

ABSTRACTElectrical properties and leakage current mechanisms of perovskite CaZrO3 dielectric thin films have been studied in this paper. CaZrO3 thin films were deposited on Pt/SiO2/n-Si substrate by the sol-gel wet chemical technology, and then annealed at temperatures ranging from 550 to 700 °C for 1h in O2. The films with platinum (Pt) top and bottom electrodes were characterized with respect to the leakage current as a function of temperature and applied voltage. The CaZrO3 film annealed at 600 °C was amorphous and showed good electrical properties with a dielectric constant of about 15 and leakage current density of 10−8 A/cm2 at high applied electrical field of 2.5 MV/cm. The data can be interpreted via a Schottky barrier model. The conduction mechanism at low electric fields is due to Ohmic conduction. On the other hand Schottky mechanism dominates at the intermediate fields. The high dielectric constant, low leakage current density and high breakdown strength suggest that the CaZrO3 thin film is a promising candidate for high-k applications.

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