Spectroscopic Ellipsometry Characterization of La2Ti2O7 Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Bryan D. Dickerson ◽  
Masaya Nagata ◽  
Y.J. Song ◽  
H.D. Nam ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Substrate Material ◽  
Index Of Refraction ◽  
Laser Deposition ◽  
Energy Substrate ◽  
Fabrication Parameters ◽  
Cauchy Model

ABSTRACTOptical properties of La2Ti2O7 thin films were investigated by spectroscopie ellipsometry and compared to those of bulk sintered ceramics. Thin films were prepared by pulsed laser deposition (PLD) from bulk targets. To separate the effects of thickness, porosity, and index of refraction on observed Ψ and δspectra in thin films, a Cauchy model for n vs. λ was developed from sintered samples, with known porosity. Assuming the effective bulk index of refraction followed the rule of mixtures, corrected models for La2Ti2O7 without porosity were used to determine thickness and porosity of thin films as a function of fabrication parameters such as laser energy, substrate material and temperature. Ellipsometry models were tested and refined through XRD, EDX, ESCA, and SEM.

Preparation and characterization of CuSbSe2 thin films deposited by pulsed laser deposition

2021 ◽  
Vol 127 ◽  
pp. 105716
Author(s):  
Tianzhen Guo ◽  
Dan Wang ◽  
Yajun Yang ◽  
Xiaoyong Xiong ◽  
Kelin Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

Processing by Pulsed Laser Deposition and Structural, Morphological and Chemical Characterization of Bi-Pb-Sr-Ca-Cu-O and Bi-Pb-Sb-Sr-Ca-Cu-O Thin Films

2010 ◽  
Vol 75 ◽  
pp. 202-207
Author(s):  
Victor Ríos ◽  
Elvia Díaz-Valdés ◽  
Jorge Ricardo Aguilar ◽  
T.G. Kryshtab ◽  
Ciro Falcony
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Chemical Characterization ◽  
Laser Deposition ◽  
Nominal Composition ◽  
Deposition Parameters ◽  
The Relationship

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.

Epitaxial Growth of AlN Thin Films on Silicon and Sapphire by Pulsed Laser Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
R.D. Vispute ◽  
H. Wu ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Breakdown Field ◽  
Transmission Electron ◽  
Uv Visible ◽  
Relationship Of

ABSTRACTAIN thin films have been grown epitaxially on Si(111) and Al2O3(0001) substrates by pulsed laser deposition. These films were characterized by FTIR and UV-Visible, x-ray diffraction, high resolution transmission electron and scanning electron microscopy, and electrical resistivity. The films deposited on silicon and sapphire at 750-800°C and laser energy density of ∼ 2 to 3J/cm2 are epitaxial with an orientational relationship of AIN[0001]║ Si[111], AIN[2 110]║Si[011] and AlN[0001]║Al2O3[0001], AIN[1 2 1 0]║ Al2O3[0110] and AIN[1010] ║ Al2O3[2110]. The both AIN/Si and AIN/Al2O3 interfaces were found to be quite sharp without any indication of interfacial reactions. The absorption edge measured by UV-Visible spectroscopy for the epitaxial AIN film grown on sapphire was sharp and the band gap was found to be 6.1eV. The electrical resistivity of the films was about 5-6×l013Ω-cm with a breakdown field of 5×106V/cm. We also found that the films deposited at higher laser energy densities ≥10J/cm2 and lower temperatures ≤650°C were nitrogen deficient and containing free metallic aluminum which degrade the microstructural, electrical and optical properties of the AIN films

Pulsed laser deposition and characterization of multilayer metal-carbon thin films

2011 ◽  
Vol 257 (15) ◽  
pp. 6445-6450 ◽  
Author(s):  
K. Siraj ◽  
M. Khaleeq-ur-Rahman ◽  
M.S. Rafique ◽  
M.Z. Munawar ◽  
S. Naseem ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Carbon Thin Films ◽  
Multilayer Metal

Raman characterization of Bi12SiO20 thin films obtained by pulsed laser deposition

1997 ◽  
Vol 109-110 ◽  
pp. 359-361 ◽  
Author(s):  
J.C. Alonso ◽  
R. Diamant ◽  
E. Haro-Poniatowski ◽  
M. Fernández-Guasti ◽  
G. Muñoz ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Raman Characterization
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