scholarly journals Properties of Piezoelectric Pzt Thin Films for Microactuator Applications

1994 ◽  
Vol 360 ◽  
Author(s):  
D. Damjanovic ◽  
K. G. Brooks ◽  
A. Kholkin ◽  
M. Kohli ◽  
T. Maeder ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Permittivity ◽  
Electric Field ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Properties ◽  
Lead Zirconate ◽  
Piezoelectric Response ◽  
Silicon Substrates ◽  
Pzt Thin Films ◽  
Geometrical Constraints

AbstractThe piezoelectric properties of lead zirconate titanate (PZT) thin films deposited on thick silicon substrates and thin silicon membranes were investigated using optical interferometry. The effect of the geometrical constraints and clamping effects on the piezoelectric response is discussed. The study of the dielectric permittivity and the loss as a function of the amplitude of the alternating electric field reveals that extrinsic contributions to the dielectric permittivity become active at large fields. The DC electric field has the effect of freezing out the extrinsic contributions. The influence of the dielectric loss on the piezoelectric properties is discussed.

Electrode Contacts on PZT Thin Films and Their Influence on Fatigue Properties

1994 ◽  
Vol 361 ◽  
Author(s):  
J.J. Lee ◽  
C.L. Thio ◽  
M. Bhattacharya ◽  
S.B. Desu
Keyword(s):  
Thin Films ◽  
Dielectric Permittivity ◽  
Lead Zirconate Titanate ◽  
Interfacial Layer ◽  
Ruthenium Oxide ◽  
Lead Zirconate ◽  
Fatigue Properties ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Metal Organic

ABSTRACTThe degradation (fatigue) of dielectric properties of ferroelectric PZT (Lead Zirconate Titanate) thin films during cycling was investigated. PZT thin films were fabricated by metal-organic decomposition (MOD). Samples with electrodes of platinum (Pt) and ruthenium oxide (RuO2) were studied. The interfacial capacitance (if any) at the Pt/PZT and RuO2/PZT interfaces was determined from the thickness dependence of low-field dielectric permittivity (εr) measurements. It was observed that a low εrlayer existed at the Pt/PZT interface but not at the RuO2/PZT interface. The dielectric permittivity of this interfacial layer degrades with increasing fatigue while the εrof the bulk PZT film remains constant. This indicates that fatigue increases the interfacial layer thickness but does not change the bulk properties. For the capacitors with RuO2/PZT/RuO2 structure, however, the εdoes not change with thickness and fatigue cycling. This implies no interfacial layer exists between RuO2/PZT and, therefore, no fatigue was observed. Additionally, an impedance spectroscopie technique has been proposed for possible use in analyzing the nature of the interfacial layer during the fatigue process.

scholarly journals Nanostructure Analysis of Sol-gel PZT Thin Films Derived from Different Chemical Routes

2009 ◽  
Vol 15 (S3) ◽  
pp. 53-54
Author(s):  
Aiying Wu ◽  
P. M. Vilarinho
Keyword(s):  
Thin Films ◽  
Data Storage ◽  
Chemical Reactivity ◽  
Sol Gel ◽  
Random Access ◽  
Lead Zirconate ◽  
Piezoelectric Response ◽  
Metal Alkoxides ◽  
Pzt Thin Films ◽  
Wide Range

AbstractLead zirconate - lead titanate (PZT) materials are commercially important piezoelectric and ferroelectrics in a wide range of applications, such as data storage (dynamic access and ferroelectric random access memories) and sensing and actuating devices. PZT with the morphotropic phase boundary composition offers the highest piezoelectric response and at the present there are no fullydeveloped alternative materials to PZT. The importance of PZT associated with the continuous requirements of device miniaturization, imposes the development of high quality PZT thin films with optimized properties. Concomitantly due to the dependence of the final properties of thin films on the details of the microstructure a thoroughly analysis at the local scale of their microstructure is necessary. Sol-gel method, is one of the Chemical Solution Deposition techniques used to prepare oxide thin films, such as PZT. Starting from a solution, a solid network is progressively formed via inorganic polymerisation reactions. Most metal alkoxides used for sol-gel synthesis are highly reactive towards hydrolysis and condensation. Therefore their chemical reactivity has to be tailored via the chemical modification (or complexation) of metal alkoxides to avoid uncontrolled reactions and precipitation. For PZT sol gel thin film preparation, two chemical routes are frequently used depending on the nature of the molecular precursor, namely methotoxyethanol (MOE) route and diol-route.

Microstructure of Solution-Processed Lead Zirconate Titanate (PZT) Thin Films

1991 ◽  
Vol 74 (6) ◽  
pp. 1455-1458 ◽  
Author(s):  
Altaf H. Carim ◽  
Bruce A. Tuttle ◽  
Daniel H. Doughty ◽  
Sheri L. Martinez
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Solution Processed ◽  
Pzt Thin Films ◽  
Zirconate Titanate

Electric field forced phase switching in La‐modified lead zirconate titanate stannate thin films

1994 ◽  
Vol 75 (3) ◽  
pp. 1699-1704 ◽  
Author(s):  
K. G. Brooks ◽  
J. Chen ◽  
K. R. Udayakumar ◽  
L. E. Cross
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Phase Switching ◽  
Zirconate Titanate

Piezoelectric properties of a near strain-free lead zirconate titanate thin films deposited on a Si substrate

2019 ◽  
Vol 239 ◽  
pp. 71-74 ◽  
Author(s):  
Tomoya Ohno ◽  
Kentaroh Fukumitsu ◽  
Takamasa Honda ◽  
Akinori Sakamoto ◽  
Sadaaki Tanaka ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Properties ◽  
Lead Zirconate ◽  
Si Substrate ◽  
Zirconate Titanate

Island Structured Dielectric Thin Films by Scalable Self-Assembly

2010 ◽  
Vol 1253 ◽  
Author(s):  
Sharath Sriram ◽  
Madhu Bhaskaran ◽  
Arnan Mitchell
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Self Assembly ◽  
Complex Oxide ◽  
Lead Zirconate ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Preferential Growth ◽  
Dielectric Thin Films ◽  
Complex Chemistry

AbstractA self-assembly driven process to synthesize island-structured dielectric films is presented. An intermetallic reaction in platinized silicon substrates provides preferential growth sites for the complex oxide dielectric (strontium-doped lead zirconate titanate) layer. Microscopy and spectroscopy analyses have been used to propose a mechanism for this structuring process. This provides a simple and scalable process to synthesize films with increased surface area for sensors, especially those materials with a complex chemistry.

A Study of Antiferromagnetic-Pinned Multiferroic Composites Nano Read Head

2016 ◽  
Author(s):  
Salinee Choowitsakunlert ◽  
Rardchawadee Silapunt ◽  
Hideki Yokoi
Keyword(s):  
Magnetic Field ◽  
Electric Field ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Piezoelectric Response ◽  
Potential Candidate ◽  
Zirconate Titanate ◽  
Read Head ◽  
Maximum Electric Field

This paper presents a study of the effect of antiferromagnetic (AFM) integration on the nano AFM-pinned multiferroic (MF) composites structure. The nano MF composites structure is a potential candidate for a future magnetic read head. The simulation of the AFM/ferromagnetic (FM) bilayers characteristics and the evaluation of the magnetoelectric (ME) effect induced in the 1-dimensional (1D) L-T mode model of AFM-pinned structure of AFM/FM/Ferroelectric (FE)/FM/AFM are performed. FM, FE, and two types of AFM materials are Terfenol-D, lead zirconate titanate (PZT), and PtMn and Cr2O3, respectively. The magnetoelectric (ME) effect is investigated using the 1D standard square law. Magnetic-field induced strain in the FM layer, piezoelectric response of the PZT layer, and the ME coefficient are determined. Specifically, the influence of AFM on the MF composites structure for various AFM thicknesses is of interest. It is found that the maximum electric field and potential across the PZT layer are achieved at 2.7 nm thick of PtMn. The result is well agreed by associated magnetic field-induced strain and ME coefficient.

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