scholarly journals Surface Structure of Tetrahedral-Coordinated Amorphous Diamond-Like Carbon Films Grown by Pulsed Laser Deposition

1994 ◽  
Vol 358 ◽  
Author(s):  
T. W. Mercer ◽  
N. J. DiNardo ◽  
L. J. Martinez-Miranda ◽  
F. Fang ◽  
T. A. Friedmann ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Surface Structure ◽  
Laser Energy ◽  
Growth Parameters ◽  
Pulsed Laser ◽  
Structural Features ◽  
Carbon Films ◽  
Laser Deposition ◽  
Contact Mode ◽  
Force Microscopy

ABSTRACTThe structure and composition of tetrahedral-coordinated amorphous diamondlike carbon films (a-tC) grown by pulsed laser deposition (PLD) of graphite has been studied with atomic force microscopy (AFM). The nanometer-scale surface structure has been studied as a function of growth parameters (e.g., laser energy density and film thickness) using contact-mode and tapping-mode AFM. Although the surfaces were found to be generally smooth, they exhibited reproducible structural features on several size scales which correlate with the variation of laser energy and the effects of excited ion etching.

Structural and Electrical Characterization of Highly Tetrahedral-Coordinated Diamond-Like Carbon Films Grown by Pulsed-Laser Deposition

1994 ◽  
Vol 349 ◽  
Author(s):  
M. P. Siegal ◽  
T. A. Friedmann ◽  
S. R. Kurtz ◽  
D. R. Tallant ◽  
R. L. Simpson ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Growth Parameters ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Carbon Films ◽  
Laser Deposition ◽  
High Resistivity ◽  
Low Frequencies ◽  
Carbon Carbon Bond

ABSTRACTHighly tetrahedral-coordinated-amorphous-carbon (a-tC) films deposited by pulsed-laser deposition (PLD) on silicon substrates are studied. These films are grown at room-temperatures in a high-vacuum ambient. a-tC films grown in this manner have demonstrated stability to temperatures in excess of T = 1000°C, more than sufficient for any post-processing treatment or application. Film surfaces are optically smooth as determined both visually and by atomic-force microscopy. PLD growth parameters can be controlled to produce films with a range of sp2 - sp3 carbon-carbon bond ratios. Films with the highest yield of sp3 C-C bonds have high resistivity, with a dielectric permittivity constant s σ 4, measured capacitively at low frequencies (1 – 100 kHz). These a-tC films are p-type semiconductors as grown. Schottky barrier diode structures have been fabricated.

Magnetism of pure, disordered carbon films prepared by pulsed laser deposition

2004 ◽  
Vol 272-276 ◽  
pp. E839-E840 ◽  
Author(s):  
R. Höhne ◽  
K.-H. Han ◽  
P. Esquinazi ◽  
A. Setzer ◽  
H. Semmelhack ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Carbon Films ◽  
Laser Deposition ◽  
Disordered Carbon

Epitaxial Growth of AlN Thin Films on Silicon and Sapphire by Pulsed Laser Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
R.D. Vispute ◽  
H. Wu ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Breakdown Field ◽  
Transmission Electron ◽  
Uv Visible ◽  
Relationship Of

ABSTRACTAIN thin films have been grown epitaxially on Si(111) and Al2O3(0001) substrates by pulsed laser deposition. These films were characterized by FTIR and UV-Visible, x-ray diffraction, high resolution transmission electron and scanning electron microscopy, and electrical resistivity. The films deposited on silicon and sapphire at 750-800°C and laser energy density of ∼ 2 to 3J/cm2 are epitaxial with an orientational relationship of AIN[0001]║ Si[111], AIN[2 110]║Si[011] and AlN[0001]║Al2O3[0001], AIN[1 2 1 0]║ Al2O3[0110] and AIN[1010] ║ Al2O3[2110]. The both AIN/Si and AIN/Al2O3 interfaces were found to be quite sharp without any indication of interfacial reactions. The absorption edge measured by UV-Visible spectroscopy for the epitaxial AIN film grown on sapphire was sharp and the band gap was found to be 6.1eV. The electrical resistivity of the films was about 5-6×l013Ω-cm with a breakdown field of 5×106V/cm. We also found that the films deposited at higher laser energy densities ≥10J/cm2 and lower temperatures ≤650°C were nitrogen deficient and containing free metallic aluminum which degrade the microstructural, electrical and optical properties of the AIN films

Diamond-like-carbon films produced by magnetically guided pulsed laser deposition

2001 ◽  
Vol 73 (5) ◽  
pp. 531-534 ◽  
Author(s):  
H. Minami ◽  
D. Manage ◽  
Y.Y. Tsui ◽  
R. Fedosejevs ◽  
M. Malac ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Carbon Films ◽  
Laser Deposition ◽  
Diamond Like Carbon

Influence of ambient gas on diamond-like carbon films prepared by KrF pulsed laser deposition

2001 ◽  
Vol 10 (3-7) ◽  
pp. 900-904 ◽  
Author(s):  
Kenji Ebihara ◽  
Toshiyuki Nakamiya ◽  
Tamiko Ohshima ◽  
Tomoaki Ikegami ◽  
Shin-ichi Aoqui
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Carbon Films ◽  
Laser Deposition ◽  
Diamond Like Carbon ◽  
Ambient Gas
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