Two Step Growth and Characterization of BaF2/Si(III) Heterostructures

1994 ◽  
Vol 356 ◽  
Author(s):  
A. Belenchuk ◽  
A. Fedorov ◽  
V. Lucash ◽  
A. Vasilyev ◽  
V. Zenchenco
Keyword(s):  
Growth Conditions ◽  
Postgrowth Annealing ◽  
Growth Method ◽  
One Step ◽  
Step Growth

AbstractThe influence of growth conditions on structural perfections and epitaxial relation in BaF2 films on Si(111) are considered. It is shown that rotational-twin-free BaF2 films (A-type orientation) can be grown on Si(111) by two step growth method. It is also shown that a mixed (A+B)-type orientation, which usually observed in BaF2 films grown by conventional one step growth method, can be converted into A-type orientation by postgrowth annealing. The correlation between type of epitaxial orientation in BaF2 films and structures of interface is discussed.

scholarly journals Characterization of RNA synthesis during a one-step growth curve and of the replication mechanism of bovine viral diarrhoea virus

1996 ◽  
Vol 77 (11) ◽  
pp. 2729-2736 ◽  
Author(s):  
Y. Gong ◽  
R. Trowbridge ◽  
T. B. Macnaughton ◽  
E. G. Westaway ◽  
A. D. Shannon ◽  
...  
Keyword(s):  
Growth Curve ◽  
Rna Synthesis ◽  
Bovine Viral Diarrhoea Virus ◽  
Bovine Viral Diarrhoea ◽  
Replication Mechanism ◽  
Diarrhoea Virus ◽  
One Step ◽  
Step Growth

Self-assembled vertically aligned Ni nanopillars in CeO2 with anisotropic magnetic and transport properties for energy applications

Nanoscale ◽  
2018 ◽  
Vol 10 (36) ◽  
pp. 17182-17188 ◽  
Author(s):  
Jijie Huang ◽  
Zhimin Qi ◽  
Leigang Li ◽  
Han Wang ◽  
Sichuang Xue ◽  
...  
Keyword(s):  
Thin Films ◽  
Metal Oxide ◽  
Transport Properties ◽  
Energy Applications ◽  
Nanocomposite Thin Films ◽  
Growth Method ◽  
One Step ◽  
Vertically Aligned ◽  
Step Growth ◽  
Self Assembled

Self-assembled vertically aligned metal–oxide (Ni–CeO2) nanocomposite thin films with novel multifunctionalities have been successfully deposited by a one-step growth method.

scholarly journals CHARACTERIZATION OF T4 MUTANTS THAT PARTIALLY SUPPRESS THE INABILITY OF T4rII TO GROW IN LAMBDA LYSOGENS

Genetics ◽  
1976 ◽  
Vol 83 (3) ◽  
pp. 477-487
Author(s):  
Theodore Homyk ◽  
Angel Rodriguez ◽  
Jon Weil
Keyword(s):  
Burst Size ◽  
Personal Communication ◽  
Growth Cycle ◽  
Plaque Morphology ◽  
One Step ◽  
Step Growth ◽  
The One ◽  
Phage Growth ◽  
L1 And L2

ABSTRACT In the course of isolating viable T4 deletions that affect plaque morphology (Homyk and Weil 1974), two closely linked point mutants, sip1 and sip2, were obtained. They map between genes t and 52, cause a reduction in plaque size and burst size, and partially suppress the lethality of rII mutants for growth in lambda lysogens. These characteristics demonstrate that sip1 and sip2 are similar to mutants previously reported by Freedman and Brenner (1972). In addition, D. Hall (personal communication) has shown that sip1 and sip2 are similar to the mutant farP85, which affects the regulation of a number of early genes (Chace and Hall 1975).—Sip suppression of rII mutants can be demonstrated in one-step growth experiments, even when both rII genes are completely deleted. This indicates that sip mutants do not simply reduce the level of rII gene products required for growth in a lambda lysogen. Instead, they alter the growth cycle so as to partially circumvent the need for any rII products.—Mutations at two other sites, designated L1 and L2, reverse the poor phage growth caused by sip and, in the one case tested, reverse the rII-suppressing ability of sip.

Characterization of Streptococcus durans bacteriophages

1968 ◽  
Vol 14 (4) ◽  
pp. 397-402 ◽  
Author(s):  
Marvin D. Brailsford ◽  
Paul A. Hartman
Keyword(s):  
Adsorption Kinetics ◽  
Temperature Effects ◽  
Rumen Fluid ◽  
Growth Characteristics ◽  
Plaque Morphology ◽  
Fecal Samples ◽  
Bovine Rumen ◽  
One Step ◽  
Step Growth

Streptococcus durans bacteriophages were isolated from bovine rumen fluid, feed lot soil, bovine fecal samples, and lysogenic strains of S. durans. The presence of different phage strains was suggested by antiserum neutralization tests and one-step growth characteristics, whereby the bacteriophages were placed into three distinct, but serologically related, groups. These phages were further characterized by plaque morphology, phage morphology, adsorption kinetics, and pH and temperature effects.

scholarly journals Characterization of a Novel Group of Listeria Phages That Target Serotype 4b Listeria monocytogenes

Viruses ◽  
2021 ◽  
Vol 13 (4) ◽  
pp. 671
Author(s):  
Yaxiong Song ◽  
Tracey L. Peters ◽  
Daniel W. Bryan ◽  
Lauren K. Hudson ◽  
Thomas G. Denes
Keyword(s):  
Listeria Monocytogenes ◽  
Food Processing ◽  
Biocontrol Agent ◽  
Novel Species ◽  
Morphological Characteristics ◽  
Inhibitory Effect ◽  
One Step ◽  
Step Growth ◽  
Serotype 4B

Listeria monocytogenes serotype 4b strains are the most prevalent clinical isolates and are widely found in food processing environments. Bacteriophages are natural viral predators of bacteria and are a promising biocontrol agent for L. monocytogenes. The aims of this study were to characterize phages that specifically infect serotype 4b strains and to assess their ability to inhibit the growth of serotype 4b strains. Out of 120 wild Listeria phages, nine phages were selected based on their strong lytic activity against the model serotype 4b strain F2365. These nine phages can be divided into two groups based on their morphological characteristics and host range. Comparison to previously characterized phage genomes revealed one of these groups qualifies to be defined as a novel species. Phages LP-020, LP-027, and LP-094 were selected as representatives of these two groups of phages for further characterization through one-step growth curve and inhibition of serotype 4b L. monocytogenes experiments. Listeria phages that target serotype 4b showed an inhibitory effect on the growth of F2365 and other serotype 4 strains and may be useful for biocontrol of L.monocytogenes in food processing environments.

scholarly journals One-step growth method of silver nanowires in aqueous environment

2020 ◽  
Vol 7 (9) ◽  
pp. 095001
Author(s):  
Xiao-Li Liu ◽  
Shuo Han ◽  
Shou-Bao Zhang ◽  
Shao-Shuai Zhou ◽  
Na Jiao ◽  
...  
Keyword(s):  
Silver Nanowires ◽  
Aqueous Environment ◽  
Growth Method ◽  
One Step ◽  
Step Growth

Isolation and characterization of two bacteriophages of a stem-nodulating Rhizobium strain from Sesbania rostrata

1984 ◽  
Vol 30 (5) ◽  
pp. 521-525 ◽  
Author(s):  
Philippe de Lajudie ◽  
Didier Bogusz
Keyword(s):  
Burst Size ◽  
Growth Cycle ◽  
Sesbania Rostrata ◽  
Isolation And Characterization ◽  
Rhizobium Strains ◽  
One Step ◽  
Average Burst Size ◽  
Step Growth ◽  
Phage Growth

Two rhizobiophages, RS1 and RS2, were isolated in Senegal from a soil sample and dry stem nodules of Sesbania rostrata, a tropical legume that is infected by two categories of Rhizobium strains: "stem strains," which nodulate both roots and stems (type strain, ORS571), and "root strains," which induce effective nodules only on roots. Both phages were found to have a host range restricted to ORS571; all root strains were found to be resistant. By electron microscopy, phage RS1 showed an hexagonal head 63 nm wide and a tail 87 nm long; phage RS2 revealed an hexagonal head 60 nm wide. Characterization of phage growth cycle by one-step growth experiments showed that the latent period was ca. 75 min for RS1 and ca. 4 h for RS2, that the rise period lasted ca. 2 h for both RS1 and RS2, and that the average burst size was ca. 100 for RS1 and 130 for RS2. Temperature denaturation occurred at 60–65 °C (RS1) and 45–50 °C (RS2). Serum neutralization tests revealed that the phages were not serologically related. In contrast to RS1, RS2 appeared to be temperate, since stable lysogens were isolated.

Characterization of the GaAs buffer layer grown on GaP by MBE for the two-step growth method

1990 ◽  
Vol 41-42 ◽  
pp. 512-515 ◽  
Author(s):  
Takashi Nomura ◽  
Kazuhito Wakatuki ◽  
Masahiro Miyao ◽  
Minoru Hagino
Keyword(s):  
Buffer Layer ◽  
Gaas Buffer Layer ◽  
Growth Method ◽  
Step Growth
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