Atomic Force Microscopy and Raman Spectroscopy Study of Strain Relaxation in InGaAs ON GaAs(100) Grown by Chemical Beam Epitaxy Using Unprecracked Monoethylarsine
2021 ◽
pp. 119672
Keyword(s):
Keyword(s):
2015 ◽
Vol 119
(32)
◽
pp. 18467-18480
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