A Study of Loop Evolution During Inert Ambient Annealing and Reaction Between Point Defects and Dislocation Loops During Oxidation of Silicon

1994 ◽  
Vol 354 ◽  
Author(s):  
J. Liu ◽  
K. S. Jones
Keyword(s):  
Point Defects ◽  
Annealing Temperature ◽  
Arrhenius Plot ◽  
Type Ii ◽  
Dislocation Loops ◽  
Plan View ◽  
Annealing Behavior ◽  
Diffusion Limited ◽  
Rate Versus ◽  
Range Type

AbstractIn the first part of this work, a plan-view TEM study has been made of the time-dependent annealing behavior of end of range (type II) dislocation loops introduced by lxl015/cm2 50KeV Si+ implantation into silicon. The activation energy for loop growth was determined to be 1.0±0.2eV from the Arrhenius plot of loop growth rate versus the reciprocal of annealing temperature. In the second part of this study, a thin boron layer was used as a diffusion monitor. The number of injected interstitials as a result of oxidation was measured by TEM. The diffusivity of boron with and without the presence of loops was studied by fitting experimental SIMS profiles with FLOOPS simulations. The interaction between loops and interstitials was determined to be diffusion limited.

Point Defect Detector Studies of Ge+ Implanted Silicon upon Oxidation

1992 ◽  
Vol 262 ◽  
Author(s):  
H. L. Meng ◽  
S. Prusstn ◽  
K. S. Jones
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Point Defect ◽  
Point Defects ◽  
Type Ii ◽  
Dislocation Loops ◽  
Furnace Annealing ◽  
Plan View ◽  
Atom Concentration ◽  
Transmission Electron

ABSTRACTPrevious results [1] have shown that type II (end-of-range) dislocation loops can be used as point defect detectors and are efficient in measuring oxidation induced point defects. This study investigates the interaction between oxidation-induced point defects and dislocation loops when Ge+ implantation was used to form the type II dislocation loops. The type II dislocation loops were introduced via Ge+ implants into <100> Si wafers at 100 keV to at doses ranging from 2×1015 to l×1016/cm2. The subsequent furnace annealing at 900 °C was done for times between 30 min and 4 hr in either a dry oxygen or nitrogen ambient. The change in atom concentration bound by dislocation loops as a result of oxidation was measured by plan-view transmission electron microscopy (PTEM). The results show that the oxidation rate for Ge implanted Si is similar to Si+ implanted Si. Upon oxidation a decrease in the interstitial injection was observed for the Ge implanted samples relative to the Si implanted samples. With increasing Ge+ dose the trapped atom concentration bound by the loops actually decreases upon oxidation relative to the inert ambient implying oxidation of Ge+ implanted silicon can result in either vacancy injection or the formation of an interstitial sink.

Point Defect Detector Studies of Oxidized Silicon

1991 ◽  
Vol 238 ◽  
Author(s):  
H. L. Meng ◽  
K. S. Jones ◽  
S. Prussin
Keyword(s):  
Ion Implantation ◽  
Point Defect ◽  
Point Defects ◽  
Device Fabrication ◽  
Type Ii ◽  
Dislocation Loops ◽  
Plan View ◽  
Atom Concentration ◽  
Enhanced Diffusion ◽  
Transmission Electron

ABSTRACTIon implantation and thermal oxidation are device fabrication processes that lead to perturbation of equilibrium point defects concentration in silicon. This study investigates the interaction between oxidation-induced point defects and type II dislocation loops intentionally introduced in silicon via ion implantation. The type II dislocation loops were introduced via Si implants into (100) Si wafers at 50 keV to a dose ranging from 2×1015 to 1×1016/cm2. The subsequent furnace annealing at 900 °C was done for times between 30 min and 4 hr in either a dry oxygen or nitrogen ambient. Plan-view transmission electron microscopy (PTEM) was used to characterize the increase in atom concentration bound by dislocation loops as a result of oxidation. The results show type II dislocation loops can be used as point defect detector and they are efficient in measuring oxidation-induced point defects. It is also shown that the measured net interstitials flux trapped by dislocation loops is linearly proportional to the total supersaturation of interstitials as measured by oxidation enhanced diffusion (OED) studies.

Type II Dislocation Loops and their Effect on Strain in Ion Implanted Silicon as Studied by High Resolution X-ray Diffraction

1995 ◽  
Vol 378 ◽  
Author(s):  
R. H. Thompson ◽  
V. Krishnamoorthy ◽  
J. Liu ◽  
K. S. Jones
Keyword(s):  
High Resolution ◽  
Type Ii ◽  
Dislocation Loops ◽  
X Ray Diffraction ◽  
Empirical Constant ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Measured Strain ◽  
P Type

AbstractP-type (100) silicon wafers were implanted with 28Si+ ions at an energy of 50 keV and to doses of 1 × 1015, 5 × 1015 and 1 × 1016 cm−2, respectively, and annealed in a N2 ambient at temperatures ranging from 700°C to 1000°C for times ranging from 15 minutes to 16 hours. The resulting microstructure consisted of varying distributions of Type II end of range dislocation loops. The size distribution of these loops was quantified using plan-view transmission electron microscopy and the strain arising from these loops was investigated using high resolution x-ray diffraction. The measured strain values were found to be constant in the loop coarsening regime wherein the number of atoms bound by the loops remained a constant. Therefore, an empirical constant of 7.7 × 10−12 interstitial/ppm of strain was evaluated to relate the number of interstitials bound by these dislocation loops and the strain. This value was used successfully in estimating the number of interstitials bound by loops at the various doses studied provided the annealing conditions were such that the loop microstructure was in the coarsening or dissolution regime.

Влияние температуры отжига на кинетику процесса алюминий-индуцированной кристаллизации тонких пленок аморфного субоксида кремния

2021 ◽  
Vol 47 (21) ◽  
pp. 39
Author(s):  
И.Е. Меркулова ◽  
А.О. Замчий ◽  
Н.А. Лунев ◽  
В.О. Константинов ◽  
Е.А. Баранов -=SUP=-1-=/SUP=-
Keyword(s):  
Annealing Temperature ◽  
Silicon Oxide ◽  
Arrhenius Plot ◽  
Nucleation Density ◽  
Diffusion Limited Aggregation ◽  
Annealing Temperatures ◽  
Diffusion Limited ◽  
First Time ◽  
Kinetics Of ◽  
Induced Crystallization

In this work, the kinetics of aluminum-induced crystallization (AIC) of non-stoichiometric silicon oxide a-SiO0.25 was investigated for annealing temperatures of 370, 385 and 400 °C, as a result of which thin films of polycrystalline silicon were obtained. It is shown that for low annealing temperatures, the surface morphology of the crystalline material is represented by dendric structures corresponding to the growth model with diffusion-limited aggregation. In addition, with an increase in the annealing temperature, the nucleation density increases from 3 to 53 mm–2. From the Arrhenius plot, the activation energy of the AIC process of a-SiO0.25 was obtained for the first time, which was 3.7±0.4 eV.

Effect of the End of Range Loop Layer Depth on the Evolution of {311} Defects.

1998 ◽  
Vol 532 ◽  
Author(s):  
R. Raman ◽  
M. E. Law ◽  
V. Krishnamoorthy ◽  
K. S. Jones
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Experimental Investigation ◽  
Point Defects ◽  
Chemical Mechanical Polishing ◽  
Dislocation Loops ◽  
Layer Depth ◽  
Plan View ◽  
Projected Range ◽  
Transmission Electron

ABSTRACTThe interactions between end of range dislocation loops and {311} defects as a function of their proximity was studied. The dislocation loops were introduced at 2600 Å by a dual 1 × 1015 cm−2, 30 keV and a 1 × 1015 cm−2 , 120 keV Si+ implantation into Silicon followed by a anneal at 850 °C for 30 minutes. The depth of the loop layer from the surface was varied from 2600 Å to 1800 Å and 1000 Å by polishing off the Si surface using a chemical-mechanical polishing (CMP) technique. A post-CMP 1 × 1014 cm−2, 40 keV Si+ implantation was used to create point defects at the projected range of 580 Å. The wafers were annealed at 700, 800 and 900 °C and plan-view transmission electron microscopy (TEM) study was performed. It was found that the number of interstitials in {311} defects decreased as the projected range damage was brought closer to the loop layer, while the number of rectangular elongated defects (REDs) increased. Experimental investigation showed that REDs are formed at the end-of-range. It is concluded that the interstitials introduced at the projected range are trapped at the end-of-range dislocations. The REDs are formed due to the interactions between the interstitials and the pre-existing loops.

Study of dislocation loops in Arsenic-Rich as-grown GaAs

1987 ◽  
Vol 45 ◽  
pp. 350-351
Author(s):  
Byung-Teak Lee
Keyword(s):  
Point Defects ◽  
Electronic Devices ◽  
Arsenic Concentration ◽  
Stoichiometric Compound ◽  
Dislocation Loops ◽  
Gaas Crystal ◽  
Ion Milling ◽  
Transmission Electron ◽  
Arsenic Source ◽  
High Arsenic

Grown-in dislocations in GaAs have been a major obstacle in utilizing this material for the potential electronic devices. Although it has been proposed in many reports that supersaturation of point defects can generate dislocation loops in growing crystals and can be a main formation mechanism of grown-in dislocations, there are very few reports on either the observation or the structural analysis of the stoichiometry-generated loops. In this work, dislocation loops in an arsenic-rich GaAs crystal have been studied by transmission electron microscopy.The single crystal with high arsenic concentration was grown using the Horizontal Bridgman method. The arsenic source temperature during the crystal growth was about 630°C whereas 617±1°C is normally believed to be optimum one to grow a stoichiometric compound. Samples with various orientations were prepared either by chemical thinning or ion milling and examined in both a JEOL JEM 200CX and a Siemens Elmiskop 102.

Contrast From Point Defects in The Infinitesimal Approximation

1980 ◽  
Vol 38 ◽  
pp. 350-351
Author(s):  
L. J. Sykes ◽  
J. J. Hren
Keyword(s):  
Electron Microscope ◽  
Point Defects ◽  
Broad Class ◽  
Stacking Fault ◽  
Crystalline Solids ◽  
Dislocation Loops ◽  
Analytical Expression ◽  
Stacking Fault Tetrahedra

In electron microscope studies of crystalline solids there is a broad class of very small objects which are imaged primarily by strain contrast. Typical examples include: dislocation loops, precipitates, stacking fault tetrahedra and voids. Such objects are very difficult to identify and measure because of the sensitivity of their image to a host of variables and a similarity in their images. A number of attempts have been made to publish contrast rules to help the microscopist sort out certain subclasses of such defects. For example, Ashby and Brown (1963) described semi-quantitative rules to understand small precipitates. Eyre et al. (1979) published a catalog of images for BCC dislocation loops. Katerbau (1976) described an analytical expression to help understand contrast from small defects. There are other publications as well.

Solute Segregation and Dynamics of Solid-Phase Crystallization In in and Sb-Implanted Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
J. Narayan ◽  
G. L. Olson ◽  
O. W. Holland
Keyword(s):  
Laser Power ◽  
Solid Phase ◽  
Solute Segregation ◽  
Dislocation Loops ◽  
Solid Phase Crystallization ◽  
Time Resolved ◽  
Plan View ◽  
Ion Channeling ◽  
Retrograde Solubility ◽  
Transmission Electron

ABSTRACTTime-resolved-reflectivity measurements have been combined with transmission electron microscopy (cross-section and plan-view), Rutherford backscattering and ion channeling techniques to study the details of laser induced solid phase epitaxial growth in In+ and Sb+ implanted silicon in the temperature range from 725 to 1500 °K. The details of microstructures including the formation of polycrystals, precipitates, and dislocations have been correlated with the dynamics of crystallization. There were limits to the dopant concentrations which could be incorporated into substitutional lattice sites; these concentrations exceeded retrograde solubility limits by factors up to 70 in the case of the Si-In system. The coarsening of dislocation loops and the formation of a/2<110>, 90° dislocations in the underlying dislocation-loop bands are described as a function of laser power.

Response properties of units in the dorsal cochlear nucleus of unanesthetized decerebrate gerbil

1996 ◽  
Vol 75 (4) ◽  
pp. 1411-1431 ◽  
Author(s):  
K. A. Davis ◽  
J. Ding ◽  
T. E. Benson ◽  
H. F. Voigt
Keyword(s):  
Dorsal Cochlear Nucleus ◽  
Type I ◽  
Type Ii ◽  
Decerebrate Cat ◽  
Excitatory Response ◽  
Type Iii ◽  
Type Iv ◽  
Noise Type ◽  
Rate Versus ◽  
Excitatory Responses

1. The electrophysiological responses of single units in the dorsal cochlear nucleus of unanesthetized decerebrate Mongolian gerbil (Meriones unguiculatus) were recorded. Units were classified according to the response map scheme of Evans and Nelson as modified by Young and Brownell, Young and Voigt, and Shofner and Young. Type II units have a V-shaped excitatory response map similar to typical auditory nerve tuning curves but little or no spontaneous activity (SpAc < 2.5 spikes/s) and little or no response to noise. Type I/III units also have a V-shaped excitatory map and SpAc < 2.5 spikes/s, but have an excitatory response to noise. Type III units have a V-shaped excitatory map with inhibitory sidebands, SpAc > 2.5 spikes/s, and an excitatory response to noise. Type IV-T units typically also have a V-shaped excitatory map with inhibitory sidebands, but have a highly nonmonotonic rate versus level response to best frequency (BF) tones like type IV units, SpAc > 2.5 spikes/s, and an excitatory response to noise. Type IV units have a predominantly inhibitory response map above an island of excitation of BF, SpAc > 2.5 spikes/s, and an excitatory response to noise. We present results for 133 units recorded with glass micropipette electrodes. The purpose of this study was to establish a normative response map data base in this species for ongoing structure/function and correlation studies. 2. The major types of units (type II, type I/III, type III, type IV-T, and type IV) found in decerebrate cat are found in decerebrate gerbil. However, the percentage of type II (7.5%) and type IV (11.3%) units encountered are smaller and the percentage of type III (62.4%) units is larger in decerebrate gerbil than in decerebrate cat. In comparison, Shofner and Young found 18.5% type II units, 30.6% type IV units, and 23.1% type III units using metal electrodes. 3. Two new unit subtypes are described in gerbil: type III-i and type IV-i units. Type III-i units are similar to type III units except that type III-i units are inhibited by low levels of noise and excited by high levels of noise whereas type III units have strictly excitatory responses to noise. Type IV-i units are similar to type IV units except that type IV-i units are excited by low levels of noise and become inhibited by high levels of noise whereas type IV units have strictly excitatory responses to noise. Type III-i units are approximately 30% of the type III population and type IV-i units are approximately 50% of the type IV population. 4. On the basis of the paucity of classic type II units and the reciprocal responses to broadband noise of type III-i and type IV-i units, we postulate that some gerbil type III-i units are the same cell type and have similar synaptic connections as cat type II units. 5. Type II and type I/III units are distinguished from one another on the basis of both their relative noise response, rho, and the normalized slope of the BF tone rate versus level functions beyond the first maximum. Previously, type II units were defined to be those nonspontaneously active units with rho values < 0.3 where rho is defined as the ratio of the maximum noise response minus spontaneous rate to the maximum BF tone response minus spontaneous rate. In the gerbil, the average rho value for type II units is 0.25, although a few values are > 0.3, and the rate-level curves are consistently nonmonotonic with normalized slopes steeper than than -0.007/dB. The average rho value for type I/III units is 0.54, although a few values are < 0.3, and the rate-level curves tend to saturate with slopes shallower than -0.006/dB. In general, the response properties of type II units recorded in gerbil are similar to those recorded in decerebrate cat. 6. In comparison to decerebrate cat, the lower percentage of type IV units recorded in decerebrate gerbil may be due to a species difference (a reduced number of type II units in gerbil) or an electrode bias.

Positron annihilation in fatigued copper

1982 ◽  
Vol 60 (2) ◽  
pp. 201-204 ◽  
Author(s):  
S. Kupca ◽  
D. P. Kerr ◽  
B. G. Hogg ◽  
Z. S. Basinski
Keyword(s):  
Single Crystals ◽  
Point Defects ◽  
High Purity ◽  
Low Temperatures ◽  
Annealing Process ◽  
Simple Diffusion ◽  
Diffusion Limited ◽  
Annealing Study ◽  
Positron Lifetimes ◽  
Trapping Process

Positron lifetimes have been measured in an isochronal annealing study of dynamically fatigued, high purity Cu single crystals. Decomposition of the lifetime spectra into two components results in a description of the annealing process in terms of the lifetime and fraction of trapped positrons. Positron lifetimes were also determined at a series of low temperatures (10–300 K) at different stages of annealing. The lifetime of positrons trapped at point defects is found to vary with temperature indicating that a description of the trapping process according to a simple diffusion limited model is not applicable.

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