Ambient Temperature Synthesis of Bulk Intermetallics

1994 ◽  
Vol 350 ◽  
Author(s):  
M. Ratzker ◽  
D. S. Lashmore ◽  
M. P. Dariel
Keyword(s):  
Ambient Temperature ◽  
Room Temperature ◽  
Binary Systems ◽  
Electronic Materials ◽  
Close Contact ◽  
Interface Area ◽  
Compound Formation ◽  
Intermetallic Compound Formation ◽  
Powder Particles ◽  
Size Powder

AbstractRoom-temperature intermetallic compound formation occurs when one of the component metals has a very low melting point or when two metals in close contact interdiffuse very rapidly. Compound formation at room temperature at the interface of superposed thin films has been observed in several instances, often in systems relating to electronic materials. The overall amount of compound produced in such configurations, however, is limited, due to the intrinsic limitations involved in the thin layer geometry. Bulk quantities of intermetallic can be produced at ambient temperature in solids by increasing the interface area between the components that interdiffuse rapidly. This condition can be achieved by having small size powder particles of one component coated with a layer of the second component. The very large interface area leads to rapid formation of bulk quantities of compounds even at ambient temperature. By appropriate control of the initial constituents and the coating parameters, it is possible to custom-prepare various intennetallic compounds present in binary systems such as silver-tin, gold-tin and silver-indium in which fast interdiffusion takes place.

Formation of Dislocation Channels in Neutron Irradiated Molybdenum

1972 ◽  
Vol 30 ◽  
pp. 672-673
Author(s):  
S. Mahajan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ambient Temperature ◽  
Room Temperature ◽  
Channel Formation ◽  
Early Stages ◽  
Transmission Electron ◽  
Three Stages ◽  
Two Stages ◽  
Polycrystalline Molybdenum

The evolution of dislocation channels in irradiated metals during deformation can be envisaged to occur in three stages: (i) formation of embryonic cluster free regions, (ii) growth of these regions into microscopically observable channels and (iii) termination of their growth due to the accumulation of dislocation damage. The first two stages are particularly intriguing, and we have attempted to follow the early stages of channel formation in polycrystalline molybdenum, irradiated to 5×1019 n. cm−2 (E > 1 Mev) at the reactor ambient temperature (∼ 60°C), using transmission electron microscopy. The irradiated samples were strained, at room temperature, up to the macroscopic yield point.Figure 1 illustrates the early stages of channel formation. The observations suggest that the cluster free regions, such as A, B and C, form in isolated packets, which could subsequently link-up to evolve a channel.

Effect of adding Ag to the medium entropy SnBiIn alloy on intermetallic compound formation

2020 ◽  
Vol 272 ◽  
pp. 127891 ◽  
Author(s):  
Li Pu ◽  
Yingxia Liu ◽  
Yong Yang ◽  
Quanfeng He ◽  
Ziqing Zhou ◽  
...  
Keyword(s):  
Intermetallic Compound ◽  
Compound Formation ◽  
Intermetallic Compound Formation

6H- AND 4H-SiC(0001) Si SURFACE RICHNESS DOSING BY HYDROGEN ETCHING: A WAY TO REDUCE THE FORMATION TEMPERATURE OF RECONSTRUCTIONS

2003 ◽  
Vol 10 (01) ◽  
pp. 55-63 ◽  
Author(s):  
M. DIANI ◽  
J. DIOURI ◽  
L. KUBLER ◽  
L. SIMON ◽  
D. AUBEL ◽  
...  
Keyword(s):  
High Temperature ◽  
Atomic Hydrogen ◽  
Room Temperature ◽  
Binary Systems ◽  
Temperature Treatment ◽  
Heating Time ◽  
High Temperature Treatment ◽  
Formation Temperature ◽  
Hydrogen Etching ◽  
Chemical Surface

In 6H- or 4H-SiC(0001) surface technology, a Si-rich 3 × 3 reconstruction is usually first prepared by heating at 800°C under Si flux, and two other most stable [Formula: see text] or [Formula: see text] reconstructions are obtained by further extensive annealing at higher temperatures ranging between 900 and 1250°C. The 3 × 3 Si excess is thus progressively depleted up to a graphitized C-rich surface. By crystallographic (LEED) and chemical surface characterizations (XPS and UPS), we show that all these reconstructions can be obtained at a unique, low formation temperature of 800°C if the Si richness is controlled before annealing. This control is achieved by exposing the 3 × 3 surface to atomic hydrogen at room temperature. This procedure allows one to etch or partially deplete the (3 × 3)-associated Si excess, and make it more comparable to the final Si coverages, required to form the less Si-rich [Formula: see text] or [Formula: see text] reconstructions. After annealing at 800°C, the latter reconstructions are no longer determined by the heating time or temperature but only by the initial Si coverage set by the H doses inducing the low temperature etching. The high temperature treatment, required to remove by sublimation a significant Si amount associated with the Si-rich 3 × 3 reconstruction, is thus avoided. Such a methodology could be applied to other binary systems in the formation of reconstructions that depends on surface richness.

Change in the Properties of a Lead-acid Battery Depending on the Cycling Speed and the Ambient Temperature

2021 ◽  
Vol 105 (1) ◽  
pp. 119-134
Author(s):  
Jana Zimáková ◽  
Petr Baca ◽  
Martin Langer ◽  
Tomáš Binar
Keyword(s):  
Ambient Temperature ◽  
High Temperatures ◽  
Room Temperature ◽  
Lead Acid Battery ◽  
Ambient Temperatures ◽  
Lead Acid Batteries ◽  
Temperature Dependences ◽  
Cycling Speed ◽  
Lead Acid

This work deals with lead-acid batteries, their properties and individual types that are available on the market. The temperature dependences of the battery parameters at different ambient temperatures and at different discharging and charging modes are measured. 6 batteries are tested at different charging currents, which provides information about their behavior both during discharge and at the time of charging. During the experiments, testing is not only performed at room temperature, but the batteries are also exposed to high temperatures up to 75 °C.

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