Thermal Profiles in Silicon-On-Insulator (Sod Material Recrystallized With Scanning Light Line Sources

1984 ◽  
Vol 35 ◽  
Author(s):  
Katsuhiko Kubota ◽  
Charles E. Hunt ◽  
Jeffrey Frey
Keyword(s):  
Zone Melting ◽  
Silicon On Insulator ◽  
Source Zone ◽  
Two Dimensional ◽  
Phase Boundaries ◽  
Multilayered Structures ◽  
Experimental Conditions ◽  
Dimensional Solution ◽  
Solidification Model ◽  
Light Line

ABSTRACTA two dimensional solution of the classical heat equation is obtained and used to predict thermal profiles during line source zone melting recrystallization of silicon on insulators. A macroscopic solidification model is used to find the extent of the molten zone in multilayered structures. The problems of convergence associated with moving phase boundaries are reduced by using transformed temperature and the enthalpy model The resultant isotherms, obtained at varying zone scan speeds, indicate optimum experimental conditions.

Melting and Solidification Dynamics in Zone Melting of Si Films.

1987 ◽  
Vol 107 ◽  
Author(s):  
D. Dutartre
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Zone Melting ◽  
Silicon On Insulator ◽  
Experimental Conditions ◽  
Melting Front ◽  
Physical Mechanisms ◽  
Si Films ◽  
Melting And Solidification

AbstractWe discuss the physics involved in the melting and solidification of Silicon On Insulator thin films (SOI) using lamp or graphite strip heaters. The melting front, called “explosive melting”, controls to a large part the final morphological quality of the SOI film. It exhibits instabilities which can (i) nucleate the dewetting of the film, (ii) cause voids, and (iii) produce a poor surface morphology. The morphologies of the solidification fronts are analyzed. We show that, depending on the experimental conditions, different physical mechanisms are responsible for the front breakdown. Thus we propose that the variety of front morphologies results from the variety of the mechanisms involved, and of their combinations with the “faceting effects”.

Liquid-Solid Interface Morphologies and Defect Structures in Zone-Melting-Recrystallized Silicon-On-Insulator Films

1987 ◽  
Vol 107 ◽  
Author(s):  
J. S. Im ◽  
C. K. Chen ◽  
C. V. Thompson ◽  
M. W. Geis ◽  
H. Tomita
Keyword(s):  
Zone Melting ◽  
Silicon On Insulator ◽  
Radiative Heating ◽  
Interfacial Region ◽  
Defect Structures ◽  
Interface Morphology ◽  
Experimental Conditions ◽  
Solid Interface ◽  
Free Films

AbstractIn-situ optical microscopy has been used to observe liquid-solid interface morphologies during zone-melting recrystallization of silicon-on-insulator films. These morphologies have been correlated with the defect morphologies of the recrystallized films. Stable cellular solidification fronts, which are obtained at low zone velocities if the radiation intensity gradient in the interfacial region is small, yield subboundary free films. We suggest that under these experimental conditions the interface morphology is primarily the result of radiative heating rather than constitutional supercooling.

Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates for high-mobility two-dimensional electron gases

2001 ◽  
Vol 79 (13) ◽  
pp. 2031-2033 ◽  
Author(s):  
L. Di Gaspare ◽  
K. Alfaramawi ◽  
F. Evangelisti ◽  
E. Palange ◽  
G. Barucca ◽  
...  
Keyword(s):  
High Mobility ◽  
Silicon On Insulator ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases

Diffraction by a half plane perpendicular to the distinguished axis of a gyrotropic medium (oblique incidence)

1981 ◽  
Vol 59 (3) ◽  
pp. 403-424 ◽  
Author(s):  
S. Przeździecki ◽  
R. A. Hurd
Keyword(s):  
Half Plane ◽  
Fourier Transforms ◽  
Boundary Value ◽  
Diffraction Problem ◽  
Closed Form Solution ◽  
Second Order ◽  
Dimensional Case ◽  
Two Dimensional ◽  
Dimensional Solution ◽  
Electromagnetic Plane Wave

An exact, closed form solution is found for the following half plane diffraction problem. (I) The medium surrounding the half plane is gyrotropic. (II) The scattering half plane is perfectly conducting and oriented perpendicular to the distinguished axis of the medium. (III) The direction of propagation of the incident electromagnetic plane wave is arbitrary (skew) with respect to the edge of the half plane. The result presented is a generalization of a solution for the same problem with incidence normal to the edge of the half plane (two-dimensional case).The fundamental, distinctive feature of the problem is that it constitutes a boundary value problem for a system of two coupled second order partial differential equations. All previously solved electromagnetic diffraction problems reduced to boundary value problems for either one or two uncoupled second order equations. (Exception: the two-dimensional case of the present problem.) The problem is formulated in terms of the (generalized) scalar Hertz potentials and leads to a set of two coupled Wiener–Hopf equations. This set, previously thought insoluble by quadratures, yields to the Wiener–Hopf–Hilbert method.The three-dimensional solution is synthesized from appropriate solutions to two-dimensional problems. Peculiar waves of ghost potentials, which correspond to zero electromagnetic fields play an essential role in this synthesis. The problem is two-moded: that is, superpositions of both ordinary and extraordinary waves are necessary for the spectral representation of the solution. An important simplifying feature of the problem is that the coupling of the modes is purely due to edge diffraction, there being no reflection coupling. The solution is simple in that the Fourier transforms of the potentials are just algebraic functions. Basic properties of the solution are briefly discussed.

Thermal Analysis of Zone‐Melting Recrystallization of Silicon‐on‐Insulator Structures with an Infrared Heat Source: An Overview

1992 ◽  
Vol 139 (9) ◽  
pp. 2687-2695 ◽  
Author(s):  
I. N. Miaoulis ◽  
P. Y. Wong ◽  
S. M. Yoon ◽  
R. D. Robinson ◽  
C. K. Hess
Keyword(s):  
Thermal Analysis ◽  
Heat Source ◽  
Zone Melting ◽  
Silicon On Insulator
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