Recent Advances in Si And Ge Zone-Melting Recrystallization

1984 ◽  
Vol 35 ◽  
Author(s):  
C. K. Chen ◽  
M. W. Gels ◽  
H. K. Choi ◽  
B-Y. Tsaur ◽  
John C. C. Fan
Keyword(s):  
Zone Melting ◽  
Recent Advances ◽  
Si Films

ABSTRACTBy improving the thermal uniformity and stability of our graphite-strip-heater oven, we have been able to significantly improve the overall quality of ZMR Si films. We have observed unbranched subboundaries and new types of defects that are less extended than the usual sub-boundaries. The overall wafer flatness has been improved so that total warp is less than 4 μm for 3-inch wafers. We have also utilized the ZMR technique for producing thin Ge-on-insulator films.

Melting and Solidification Dynamics in Zone Melting of Si Films.

1987 ◽  
Vol 107 ◽  
Author(s):  
D. Dutartre
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Zone Melting ◽  
Silicon On Insulator ◽  
Experimental Conditions ◽  
Melting Front ◽  
Physical Mechanisms ◽  
Si Films ◽  
Melting And Solidification

AbstractWe discuss the physics involved in the melting and solidification of Silicon On Insulator thin films (SOI) using lamp or graphite strip heaters. The melting front, called “explosive melting”, controls to a large part the final morphological quality of the SOI film. It exhibits instabilities which can (i) nucleate the dewetting of the film, (ii) cause voids, and (iii) produce a poor surface morphology. The morphologies of the solidification fronts are analyzed. We show that, depending on the experimental conditions, different physical mechanisms are responsible for the front breakdown. Thus we propose that the variety of front morphologies results from the variety of the mechanisms involved, and of their combinations with the “faceting effects”.

Reuse of Sludge from Pulp and Paper Industry Pilot and Full Scale Applications

1993 ◽  
Vol 28 (2) ◽  
pp. 17-26 ◽  
Author(s):  
V. Eroǧlu ◽  
A. M. Saatçi
Keyword(s):  
Economic Analysis ◽  
Paper Industry ◽  
Pulp And Paper Industry ◽  
Pulp And Paper ◽  
Full Scale ◽  
Primary Sludge ◽  
Recent Advances ◽  
Made In

Recent advances made in the reuse of pulp and paper industry sludges in hardboard production are explained. Data obtained from pilot and full-scale plants using primary sludge of a pulp and paper industry as an additive in the production of hardboard is presented. An economic analysis of the reuse of pulp and paper primary sludge in hardboard manufacturing is given. The quality of the hardboard produced is tested and compared with the qualities of the hardboard produced by the same plant before the addition of primary sludge. The hardboard with primary sludge additive has been used in Turkey for about a year in the manufacturing of office and home furniture. The results are very satisfactory when the primary sludge is used at 1/4 ratio.

scholarly journals Challenges and Techniques for Simulating Line Emission

Galaxies ◽  
2018 ◽  
Vol 6 (4) ◽  
pp. 100 ◽  
Author(s):  
Karen Olsen ◽  
Andrea Pallottini ◽  
Aida Wofford ◽  
Marios Chatzikos ◽  
Mitchell Revalski ◽  
...  
Keyword(s):  
Interstellar Medium ◽  
Emission Line ◽  
Line Emission ◽  
Emission Lines ◽  
Synthetic Spectra ◽  
Recent Advances ◽  
The Future ◽  
Important Quality ◽  
Circumgalactic Medium

Modeling emission lines from the millimeter to the UV and producing synthetic spectra is crucial for a good understanding of observations, yet it is an art filled with hazards. This is the proceedings of “Walking the Line”, a 3-day conference held in 2018 that brought together scientists working on different aspects of emission line simulations, in order to share knowledge and discuss the methodology. Emission lines across the spectrum from the millimeter to the UV were discussed, with most of the focus on the interstellar medium, but also some topics on the circumgalactic medium. The most important quality of a useful model is a good synergy with observations and experiments. Challenges in simulating line emission are identified, some of which are already being worked upon, and others that must be addressed in the future for models to agree with observations. Recent advances in several areas aiming at achieving that synergy are summarized here, from micro-physical to galactic and circum-galactic scale.

Electrical Characteristics and Device Applications of Zone-Melting-Recrystallized Si Films on SiO2

1982 ◽  
Vol 13 ◽  
Author(s):  
B-Y. Tsaur ◽  
John C. C. Fan ◽  
M. W. Geis ◽  
R. L. Chapman ◽  
S. R. J. Brueck ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Zone Melting ◽  
Dimensional Structure ◽  
Electrical Characteristics ◽  
Mos Capacitors ◽  
Test Circuit ◽  
Speed Performance ◽  
Thin Film Resistors ◽  
High Yields ◽  
Si Films

ABSTRACTDevice-quality Si films have been prepared by using graphite strip heaters for zone melting poly-Si films deposited on SiO2-coated substrates. The electrical characteristics of these films have been studied by the fabrication and evaluation of thin-film resistors, Mosfets and MOS capacitors. High yields of functional transistor arrays and ring oscillators with promising speed performance have been obtained for CMOS test circuit chips fabricated in recrystallized Si films on 2-inch-diameter Si wafers. Dualgate Mosfets with a three-dimensional structure have been fabricated by using the zone-melting recrystallization technique.

scholarly journals The design and construction of reference pangenome graphs with minigraph

2020 ◽  
Vol 21 (1) ◽  
Author(s):  
Heng Li ◽  
Xiaowen Feng ◽  
Chong Chu
Keyword(s):  
Data Model ◽  
Reference Genome ◽  
Structural Variants ◽  
Current Reference ◽  
Sequencing Technologies ◽  
Recent Advances ◽  
Multiple Genomes ◽  
Design And Construction

Abstract The recent advances in sequencing technologies enable the assembly of individual genomes to the quality of the reference genome. How to integrate multiple genomes from the same species and make the integrated representation accessible to biologists remains an open challenge. Here, we propose a graph-based data model and associated formats to represent multiple genomes while preserving the coordinate of the linear reference genome. We implement our ideas in the minigraph toolkit and demonstrate that we can efficiently construct a pangenome graph and compactly encode tens of thousands of structural variants missing from the current reference genome.

Arc lamp zone melting and recrystallization of Si films on oxidized silicon substrates

1982 ◽  
Vol 41 (9) ◽  
pp. 824-826 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons
Keyword(s):  
Zone Melting ◽  
Silicon Substrates ◽  
Si Films

Zone‐melting recrystallization of 3‐in.‐diam Si films on SiO2‐coated Si substrates

1982 ◽  
Vol 41 (2) ◽  
pp. 186-188 ◽  
Author(s):  
John C. C. Fan ◽  
B‐Y. Tsaur ◽  
R. L. Chapman ◽  
M. W. Geis
Keyword(s):  
Zone Melting ◽  
Si Substrates ◽  
Si Films
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