Characterization, Control, and Reduction of Subboundaries in Silicon on Insulators

1984 ◽  
Vol 35 ◽  
Author(s):  
M. W. Geis ◽  
C. K. Chen ◽  
Henry I. Smith ◽  
R. W. Mountain ◽  
C. L. Doherty
Keyword(s):  
Defect Structure ◽  
Chemical Etching ◽  
Zone Melting ◽  
Constitutional Supercooling ◽  
Cellular Growth ◽  
Semiconductor Films ◽  
Crystalline Defects ◽  
Transmission Electron ◽  
Thin Semiconductor ◽  
Si Films

ABSTRACTSubboundaries are the major crystalline defects in thin semiconductor films produced by zone-melting recrystallization (ZMR). Using transmission electron microscopy (TEM) and chemical etching we have analyzed the angular discontinuity and defect structure of subboundaries in ZMR Si films. Annealing in oxygen has resulted in the elimination of dislocation bands from sizable regions of some films. Calculations suggest that cellular growth due to constitutional supercooling may not occur in some Si ZMR.

Elimination of Subboundaries from Zone-Melting-Recrystallized Silicon-On-Insulator Films

1985 ◽  
Vol 53 ◽  
Author(s):  
M. W. Geis ◽  
C. K. Chen ◽  
Henry I. Smith ◽  
P. M. Nitishin ◽  
B-Y. Tsaur ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Thermal Gradient ◽  
Zone Melting ◽  
Silicon On Insulator ◽  
Crystalline Defects ◽  
Si Films

ABSTRACTSince the introduction of zone-melting recrystallization (ZMR)for silicon-on-insulator (SOI) films, subboundaries (low-angle grain boundaries) have been the major crystalline defects in recrystallized films. By using an improved ZMR procedure, subboundaries have been eliminated over large areas. The improvements include the use of 1-µm-thick polycrystalline-Si films deposited on 2-µm-thick thermal SiO2 film (instead of 0.5-µm-thick Si and SiO2 films), a new encapsulation technique, and improved control of the thermal gradient during ZMR. Recrystallized SOI films without subboundaries contain isolated dislocations with densities <2 × 106 cm−2.

7-beam lattice images of (110) oriented Ge

1978 ◽  
Vol 36 (1) ◽  
pp. 290-291
Author(s):  
J.R. Parsons ◽  
C.W. Hoelke
Keyword(s):  
Image Features ◽  
Objective Lens ◽  
Lattice Plane ◽  
Lattice Image ◽  
Crystalline Defects ◽  
Transmission Electron ◽  
Lattice Images ◽  
Electron Microscopes ◽  
Structural Aspects ◽  
Beam Lattice

The direct imaging of a crystal lattice has intrigued electron microscopists for many years. What is of interest, of course, is the way in which defects perturb their atomic regularity. There are problems, however, when one wishes to relate aperiodic image features to structural aspects of crystalline defects. If the defect is inclined to the foil plane and if, as is the case with present 100 kV transmission electron microscopes, the objective lens is not perfect, then terminating fringes and fringe bending seen in the image cannot be related in a simple way to lattice plane geometry in the specimen (1).The purpose of the present work was to devise an experimental test which could be used to confirm, or not, the existence of a one-to-one correspondence between lattice image and specimen structure over the desired range of specimen spacings. Through a study of computed images the following test emerged.

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

Growth of near noble metal Pd and Pt thin film silicides morphology and structure

1984 ◽  
Vol 42 ◽  
pp. 498-499
Author(s):  
E. I. Alessandrini ◽  
M. O. Aboelfotoh
Keyword(s):  
Noble Metals ◽  
Annealing Temperature ◽  
Chemical Compounds ◽  
Barrier Properties ◽  
Solid State Reactions ◽  
Transmission Electron ◽  
Stable Chemical ◽  
Metal Thickness ◽  
Amorphous Si ◽  
Si Films

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.

The observation of defects on (100) CdTe surfaces by chemical etching

1992 ◽  
Vol 50 (2) ◽  
pp. 1424-1425
Author(s):  
M.E. Lee
Keyword(s):  
Single Crystal ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Chemical Etching ◽  
Crystalline Perfection ◽  
Crystalline Defects ◽  
High Incidence ◽  
Crystallographic Defects ◽  
Cdznte Substrates ◽  
Device Technology

The crystalline perfection of bulk CdTe substrates plays an important role in their use in infrared device technology. The application of chemical etchants to determine crystal polarity or the density and distribution of crystallographic defects in (100) CdTe is not well understood. The lack of data on (100) CdTe surfaces is a result of the apparent difficulty in growing (100) CdTe single crystal substrates which is caused by a high incidence of twinning. Many etchants have been reported to predict polarity on one or both (111) CdTe planes but are considered to be unsuitable as defect etchants. An etchant reported recently has been considered to be a true defect etchant for CdTe, MCT and CdZnTe substrates. This etchant has been reported to reveal crystalline defects such as dislocations, grain boundaries and inclusions in (110) and (111) CdTe. In this study the effect of this new etchant on (100) CdTe surfaces is investigated.The single crystals used in this study were (100) CdTe as-cut slices (1mm thickness) from Bridgman-grown ingots.

A crystallographic analysis of the CoSi/Si(111) interface using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 574-575
Author(s):  
A.C. Daykin ◽  
C.J. Kiely ◽  
R.C. Pond ◽  
J.L. Batstone
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Defect Structure ◽  
Room Temperature ◽  
Theoretical Method ◽  
Crystallographic Analysis ◽  
Si Substrate ◽  
Transmission Electron ◽  
Theoretical Predictions

When CoSi2 is grown onto a Si(111) surface it can form in two distinct orientations. A-type CoSi2 has the same orientation as the Si substrate and B-type is rotated by 180° degrees about the [111] surface normal.One method of producing epitaxial CoSi2 is to deposit Co at room temperature and anneal to 650°C.If greater than 10Å of Co is deposited then both A and B-type CoSi2 form via a number of intermediate silicides .The literature suggests that the co-existence of A and B-type CoSi2 is in some way linked to these intermediate silicides analogous to the NiSi2/Si(111) system. The phase which forms prior to complete CoSi2 formation is CoSi. This paper is a crystallographic analysis of the CoSi2/Si(l11) bicrystal using a theoretical method developed by Pond. Transmission electron microscopy (TEM) has been used to verify the theoretical predictions and to characterise the defect structure at the interface.

Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy

2012 ◽  
Vol 23 (4) ◽  
pp. 045302 ◽  
Author(s):  
Monica Bollani ◽  
Daniel Chrastina ◽  
Valeria Montuori ◽  
Daniela Terziotti ◽  
Emiliano Bonera ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Etching ◽  
Transmission Electron

Formation process of interface states at grain boundaries in sputtered polycrystalline Si films

1999 ◽  
Vol 14 (2) ◽  
pp. 371-376 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Jiro Sakata ◽  
Yasunori Taga
Keyword(s):  
Energy Levels ◽  
Columnar Structure ◽  
Systematic Investigation ◽  
Defect States ◽  
Electron Microscopic ◽  
Thermally Induced ◽  
Transmission Electron ◽  
Transmission Electron Microscopic ◽  
Si Films ◽  
Induced Changes

A systematic investigation has been made on surface defect states of crystallites in the crystallization process of sputtered amorphous silicon films by isothermal annealing. Transmission electron microscopic observations indicate a pronounced vertical columnar structure in the upper part of the films, where the crystallization is delayed. Admittance spectroscopy reveals that two newly generated energy levels with the crystallization are attributed to the crystallites in the lower and upper parts of the films in view of the anisotropic crystallization. These thermally induced changes can be well explained by Si–Si shearing modes at the interfaces of crystallites through the process of crystallization.

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