Parameter Optimization for the Arc-Adlc-Deposition Process

1994 ◽  
Vol 349 ◽  
Author(s):  
O. Knotek ◽  
F. Löffler ◽  
C. Barimani ◽  
J. Brand
Keyword(s):  
Film Growth ◽  
Deposition Process ◽  
High Energy ◽  
Carbon Films ◽  
Process Efficiency ◽  
Substrate Current ◽  
Thin Carbon ◽  
Mechanical Filter ◽  
Cathodic Arc Evaporation ◽  
Reactive Gases

ABSTRACTOne method used by the industry for the deposition of thin carbon films is the dc cathodic arcion plating process. The evaporation of a graphite cathode by a high energy arc beam results in the production of carbon atoms, ions and macroscopic graphitic fragments. All these particles influence the film growth, the structure and therefore the film properties. The incorporation of the macroscopic graphitic fragments can be avoided by the use of mechanical or magnetic filters in front of the cathode. These filters prevent the direct bombardment of the substrates with particles. This particle separation involves decreased substrate current densities and this means lower deposition temperature (< 200°C) and growth rates. With the addition of inert (argon) and reactive gases (nitrogen and methane) and the use of a bias voltage on the substrate economical deposition rates of 2-4 μm/h and good adhesion on various materials can be reached.This paper describes the production of amorphous hydrogen and hydrogen-free carbon films by a modified cathodic arc evaporation process using a simple mechanical filter for particle reduction. It shows the influence of some process parameters on the optimization of the process stability and process efficiency. Some characteristic properties of these coatings are shown by an example.

Ion Probe Diagnostics of Laser Ablated Plumes for Thin Carbon Films Deposition

1998 ◽  
Vol 12 (25) ◽  
pp. 2619-2633 ◽  
Author(s):  
R. K. Dwivedi ◽  
S. P. Singh ◽  
R. K. Thareja
Keyword(s):  
Film Growth ◽  
Pulsed Laser ◽  
Target Surface ◽  
Carbon Films ◽  
Gas Pressure ◽  
Plasma Parameters ◽  
Ion Probe ◽  
Thin Carbon ◽  
Ambient Gas ◽  
Deposited Film

The propagation of the carbon plumes in argon atmosphere used for film growth by pulsed laser ablation deposition (PLAD) is studied using ion probe. Spatial and angle resolved analysis of plasma parameters as a function of argon gas pressure is presented. The electron temperature is strongly dependent on the angle with target surface normal as well as the distance from the target surface. The forward directed nature of the PLAD process is strongly influenced by the pressure of the ambient gas. The plasma parameters are used to explain the effect of ambient gas pressure on the characteristics of the deposited film.

scholarly journals Влияние энергии ионной стимуляции на удельное электросопротивление углеродных пленок, полученных методом импульсно-плазменного осаждения в атмосфере азота

2019 ◽  
Vol 61 (11) ◽  
pp. 2244
Author(s):  
И.А. Завидовский ◽  
O.A. Стрелецкий ◽  
О.Ю. Нищак ◽  
A.A. Хайдаров
Keyword(s):  
Electron Diffraction ◽  
Deposition Process ◽  
Carbon Films ◽  
Gas Mixture ◽  
Specific Resistivity ◽  
Energy Increase ◽  
Nitrogen Gas ◽  
Graphite Phase ◽  
Thin Carbon ◽  
Ion Assistance

In the paper, thin carbon films deposited by pulse-plasma ion-assisted sputtering of graphite in argon-nitrogen gas mixture are discussed. The EELS and electron diffraction showed the graphite phase enlargement with the ion assistance energy increase. Application of ion assistance during the deposition process made it possible to control the films specific resistivity, altering it from 10^5 to 10^2 Ohm⋅cm.

Characteristics of TiAl-Doped DLC/TiAlN/TiN Multilayered Coatings Synthesized by Cathodic Arc Evaporation

2006 ◽  
Vol 118 ◽  
pp. 247-256 ◽  
Author(s):  
Chi Lung Chang ◽  
Jui Yun Jao ◽  
Wei Yu Ho ◽  
Da Yung Wang
Keyword(s):  
Practical Importance ◽  
Cutting Tools ◽  
Batch Process ◽  
High Energy ◽  
Production Scale ◽  
Cathodic Arc Evaporation ◽  
Reactive Gases ◽  
Combined Coatings ◽  
Arc Evaporation ◽  
Cathodic Arc

The combinations of TiAl-doped DLC and TiAlN/TiN layers were designed to deposit on the tool steels using cathodic arc evaporation in a continuously single batch process. The economic advantage in depositing the combined coating in one production scale of PVD system is of practical importance. The TiAl-doped DLC as lubricant coatings were synthesized by using arc plasma sources mounted with Ti50Al50-target to emit high energy ion plasma to activate the decomposition of acetylene reactive gases. The results show that the TiAl-doped DLC and TiAlN/TiN combined coatings retained lower friction coefficient at approximately 0.15 during the steady-state sliding. The lubricity and wear resistance of TiAl-doped DLC/TiAlN/TiN coatings is then demonstrated to potentially be applied to the cutting tools with no lubricants.

In Situ Electron Spectroscopic Identification of Carbon Species Deposited by Laser Ablation

1996 ◽  
Vol 436 ◽  
Author(s):  
E. C. Samano ◽  
Gerardo Soto ◽  
Arturo Gamietea ◽  
Leonel Cota
Keyword(s):  
Substrate Surface ◽  
Pyrolytic Graphite ◽  
Deposition Process ◽  
Carbon Films ◽  
Spectroscopic Techniques ◽  
Carbon Species ◽  
Thin Carbon ◽  
Spectroscopic Identification ◽  
Relationship Of

AbstractThin carbon films were grown on Si (111) substrates by ablating a graphite target utilizing an excimer pulsed laser in a UHV Riber © LDM-32 system. Two kinds of films were produced, a highly oriented pyrolytic graphite (HOPG) type and a diamond-like carbon (DLC) type. A relationship of the films microstructure with laser power density and substrate conditions was observed. The HOPG films were homogeneous but the DLC films were heterogeneous, as shown by micrographs. The thin films are monitored and analyzed in situ during the first stages of the deposition process. The monitoring was done by RHEED and the characterization by several surface spectroscopic techniques, AES, XPS and EELS. The formation of a SiC interface was observed for both films due to the reaction of the first carbon species with the substrate surface.

Integrated Two-Stage Processing of Microcrystalline Silicon Thin Films on SiO2 and Glass

1996 ◽  
Vol 429 ◽  
Author(s):  
D. Wolfe ◽  
F. Wang ◽  
G. Lucovsky
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Deposition Process ◽  
High Energy ◽  
Dark Conductivity ◽  
Microcrystalline Silicon ◽  
Two Stage ◽  
Temperature Plasma ◽  
Raman Scattering Spectroscopy ◽  
Glass Substrates

AbstractA novel two-stage low temperature plasma assisted deposition process, which separates interface formation from bulk film growth, was investigated for deposition of in-situ phosphorous doped microcrystalline silicon (μc-Si) thin films on SiO2 and glass substrates. We find that the bulk layer microstructure, as characterized by reflection high energy electron diffraction and Raman scattering spectroscopy, is the same whether or not a buffer layer is used. However, we find significant differences in the room temperature dark conductivity, and the dark conductivity activation energies.

Laser-Ablation of Various Oxide Materials Over Large Areas

1990 ◽  
Vol 191 ◽  
Author(s):  
James A. Greer ◽  
H. Jerrold Van Hook
Keyword(s):  
Laser Ablation ◽  
Physical Vapor Deposition ◽  
Film Growth ◽  
High Energy ◽  
Published Report ◽  
Device Applications ◽  
Novel Method ◽  
Reactive Gases ◽  
Infrared Materials

Laser-Ablation (LA) had received little attention prior to the first published report of depositing Y1Ba2Cu3O7-x) (YBCO) thin films with this novel method.[1] However, LA has been used to produce films of infrared materials for some time[2], and the recent discovery of 1-igh Temperature Superconductors (HITS) has sparked considerable interest in this relatively obscure Physical Vapor Deposition (PVD) technique. Over the past three years, a variety of in-situ LA processes for producing films of HTS compounds, as well as other materials, have been reported in the literature.[3,4,5,6,7] Like any other PVD technique, LA has its own unique advantages anid disadvantages. The main advantages of LA include: 1) its ability to accurately replicate the stoichiometry of the ablation target within the laser-deposited film; 2) the high energy of the ablated species which may enhance the quality of film growth; 3) it does not require hot filaments which allow a number of reactive gases to be present in the chamber during deposition; and 4) a wide array of complex chemical compounds can be deposited. Two of the main problems facing this emerging PVD technique have been: 1) it has been applied mostly to small area deposition (<6 cm2) with poor uniformity, and 2) the ablated films typically display a large number- of particles ranging in size from 0.5 μm to over 10 μm, whose presence may significantly hamper a number of microelectronic device applications.

Object Wave Determination by Single-Sideband Methods

1973 ◽  
Vol 31 ◽  
pp. 266-267
Author(s):  
Kenneth H. Downing ◽  
Benjamin M. Siegel
Keyword(s):  
Phase Shift ◽  
Carbon Films ◽  
Object Wave ◽  
Electron Wave ◽  
Phase Object ◽  
Heavy Atoms ◽  
Single Sideband ◽  
Thin Carbon ◽  
Additional Phase Shift ◽  
Additional Phase

Under the “weak phase object” approximation, the component of the electron wave scattered by an object is phase shifted by π/2 with respect to the unscattered component. This phase shift has been confirmed for thin carbon films by many experiments dealing with image contrast and the contrast transfer theory. There is also an additional phase shift which is a function of the atomic number of the scattering atom. This shift is negligible for light atoms such as carbon, but becomes significant for heavy atoms as used for stains for biological specimens. The light elements are imaged as phase objects, while those atoms scattering with a larger phase shift may be imaged as amplitude objects. There is a great deal of interest in determining the complete object wave, i.e., both the phase and amplitude components of the electron wave leaving the object.

Interpretation of irradiation-induced changes in electron diffractograms and images of extinction contours at low temperatures

1984 ◽  
Vol 42 ◽  
pp. 268-269
Author(s):  
E. Knapek ◽  
H. Formanek ◽  
G. Lefranc ◽  
I. Dietrich
Keyword(s):  
Low Temperatures ◽  
Carbon Films ◽  
Organic Crystals ◽  
Wide Spread ◽  
Lens System ◽  
Preparation Conditions ◽  
Thin Carbon ◽  
Electron Diffractograms ◽  
Diffraction Patterns ◽  
Induced Changes

A few years ago results on cryoprotection of L-valine were reported, where the values of the critical fluence De i.e, the electron exposure which decreases the intensity of the diffraction reflections by a factor e, amounted to the order of 2000 + 1000 e/nm2. In the meantime a discrepancy arose, since several groups published De values between 100 e/nm2 and 1200 e/nm2 /1 - 4/. This disagreement and particularly the wide spread of the results induced us to investigate more thoroughly the behaviour of organic crystals at very low temperatures during electron irradiation.For this purpose large L-valine crystals with homogenuous thickness were deposited on holey carbon films, thin carbon films or Au-coated holey carbon films. These specimens were cooled down to nearly liquid helium temperature in an electron microscope with a superconducting lens system and irradiated with 200 keU-electrons. The progress of radiation damage under different preparation conditions has been observed with series of electron diffraction patterns and direct images of extinction contours.

Scanning Secondary Electron Microscopy of Myofibrils Using Transmission Techniques

1975 ◽  
Vol 33 ◽  
pp. 556-557
Author(s):  
M. K. Lamvik
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
Carbon Films ◽  
Photographic Recording ◽  
Transmission Electron ◽  
Thin Carbon ◽  
The Common ◽  
Scanning Electron ◽  
Better Than ◽  
Cellular Organelles

When observing small objects such as cellular organelles by scanning electron microscopy, it is often valuable to use the techniques of transmission electron microscopy. The common practice of mounting and coating for SEM may not always be necessary. These possibilities are illustrated using vertebrate skeletal muscle myofibrils.Micrographs for this study were made using a Hitachi HFS-2 scanning electron microscope, with photographic recording usually done at 60 seconds per frame. The instrument was operated at 25 kV, with a specimen chamber vacuum usually better than 10-7 torr. Myofibrils were obtained from rabbit back muscle using the method of Zak et al. To show the component filaments of this contractile organelle, the myofibrils were partially disrupted by agitation in a relaxing medium. A brief centrifugation was done to clear the solution of most of the undisrupted myofibrils before a drop was placed on the grid. Standard 3 mm transmission electron microscope grids covered with thin carbon films were used in this study.

Modifications of a JEOL 2000EX TEM for insSitu surface studies

1993 ◽  
Vol 51 ◽  
pp. 640-641
Author(s):  
Michael T. Marshall ◽  
Xianghong Tong ◽  
J. Murray Gibson
Keyword(s):  
Electron Diffraction ◽  
Surface Science ◽  
Film Growth ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Transmission Electron ◽  
Fundamental Insight

We have modified a JEOL 2000EX Transmission Electron Microscope (TEM) to allow in-situ ultra-high vacuum (UHV) surface science experiments as well as transmission electron diffraction and imaging. Our goal is to support research in the areas of in-situ film growth, oxidation, and etching on semiconducter surfaces and, hence, gain fundamental insight of the structural components involved with these processes. The large volume chamber needed for such experiments limits the resolution to about 30 Å, primarily due to electron optics. Figure 1 shows the standard JEOL 2000EX TEM. The UHV chamber in figure 2 replaces the specimen area of the TEM, as shown in figure 3. The chamber is outfitted with Low Energy Electron Diffraction (LEED), Auger Electron Spectroscopy (AES), Residual Gas Analyzer (RGA), gas dosing, and evaporation sources. Reflection Electron Microscopy (REM) is also possible. This instrument is referred to as SHEBA (Surface High-energy Electron Beam Apparatus).The UHV chamber measures 800 mm in diameter and 400 mm in height. JEOL provided adapter flanges for the column.

Sign in / Sign up

Export Citation Format

Share Document