Choice of Compounds with Fast Core-Valence Transitions

1994 ◽  
Vol 348 ◽  
Author(s):  
Piotr A. Rodnyi
Keyword(s):  
Valence Band ◽  
Ionic Crystals ◽  
Intrinsic Luminescence ◽  
Wide Gap ◽  
Core Band

It is now well established that in a number of wide gap ionic crystals a specific intrinsic luminescence can be observed due to radiative hole transitions between the upper core band and valence band. The progress in knowledge about core-valence (CV) transitions is considered in papers [1-3].

Luminescence Due to Radiative Transitions between Valence Band and Upper Core Band in Ionic Crystals (Crossluminescence)

1987 ◽  
Vol 144 (2) ◽  
pp. 835-844 ◽  
Author(s):  
J. L. Jansons ◽  
V. J. Krumins ◽  
Z. A. Rachko ◽  
J. A. Valbis
Keyword(s):  
Valence Band ◽  
Ionic Crystals ◽  
Radiative Transitions ◽  
Core Band

Phonon broadening of line widths of Auger-free luminescence in wide-gap ionic crystals

1997 ◽  
Vol 72-74 ◽  
pp. 762-764 ◽  
Author(s):  
M. Itoh ◽  
K. Sawada ◽  
H. Hara ◽  
N. Ohno ◽  
M. Kamada
Keyword(s):  
Ionic Crystals ◽  
Line Widths ◽  
Wide Gap

scholarly journals Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

2014 ◽  
Vol 2014 ◽  
pp. 1-30 ◽  
Author(s):  
Valeri V. Afanas'ev
Keyword(s):  
Valence Band ◽  
High Mobility ◽  
Band Alignment ◽  
Photoemission Spectroscopy ◽  
Light Elements ◽  
Bandgap Width ◽  
Electron Band ◽  
Internal Photoemission ◽  
Wide Gap ◽  
Photoemission Study

Evolution of the electron energy band alignment at interfaces between different semiconductors and wide-gap oxide insulators is examined using the internal photoemission spectroscopy, which is based on observations of optically-induced electron (or hole) transitions across the semiconductor/insulator barrier. Interfaces of various semiconductors ranging from the conventional silicon to the high-mobility Ge-based (Ge,Si1-xGex,Ge1-xSnx) andAIIIBVgroup (GaAs,InxGa1-xAs, InAs, GaP, InP, GaSb, InSb) materials were studied revealing several general trends in the evolution of band offsets. It is found that in the oxides of metals with cation radii larger than≈0.7 Å, the oxide valence band top remains nearly at the same energy (±0.2 eV) irrespective of the cation sort. Using this result, it becomes possible to predict the interface band alignment between oxides and semiconductors as well as between dissimilar insulating oxides on the basis of the oxide bandgap width which are also affected by crystallization. By contrast, oxides of light elements, for example, Be, Mg, Al, Si, and Sc exhibit significant shifts of the valence band top. General trends in band lineup variations caused by a change in the composition of semiconductor photoemission material are also revealed.

IR femtochemistry on the surface of wide-gap ionic crystals

Laser Physics ◽  
2018 ◽  
Vol 28 (2) ◽  
pp. 026002
Author(s):  
V B Laptev ◽  
S V Chekalin ◽  
I A Dorofeyev ◽  
V O Kompanets ◽  
S V Pigulsky ◽  
...  
Keyword(s):  
Ionic Crystals ◽  
Wide Gap

VUV excitation of intrinsic luminescence of ionic crystals with complicated band structure. Simulation

1997 ◽  
Vol 72-74 ◽  
pp. 96-97 ◽  
Author(s):  
A.N. Belsky ◽  
R.A. Glukhov ◽  
P. Martin ◽  
V.V. Mikhailin ◽  
C. Pédrini ◽  
...  
Keyword(s):  
Band Structure ◽  
Ionic Crystals ◽  
Intrinsic Luminescence ◽  
Structure Simulation

Energy Localization and Decay in Highly Ionic Crystals

1994 ◽  
Vol 348 ◽  
Author(s):  
R. T. Williams ◽  
E. D. Thoma ◽  
P. H. Bunton
Keyword(s):  
Localized States ◽  
Type I ◽  
Ionic Crystals ◽  
Energy Localization ◽  
Rare Earth Fluoride ◽  
Luminescence Efficiency ◽  
Earth Fluoride ◽  
Wide Gap ◽  
Hole Localization

ABSTRACTLuminescence from localized states in pure wide-gap crystals is examined from the perspective of modern fast scintillator requirements. Recent advances in the understanding of self-trapped excitons are summarized with regard to excited-state configurations, spectra, and luminescence efficiency. As an example, the fast luminescence of partially quenched type I STEs in RbI offers tuneable-lifetime subnanosecond pulses which could be useful for timing applications. The possible role of hole localization in cross luminescence is discussed. Stokes-shifted luminescence in some pure rare-earth fluoride crystals probably originates from self-trapped excitons of forms to be discussed.

p+-CdB2 - n-CdF2 and p+-Si - p-CdB2 - n-CdF2 Diffusion Heterostructures

2005 ◽  
Vol 237-240 ◽  
pp. 1060-1065 ◽  
Author(s):  
Nikolai T. Bagraev ◽  
L.E. Klyachkin ◽  
A.M. Malyarenko ◽  
A.S. Shcheulin ◽  
Alexandr I. Ryskin
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Gas Phase ◽  
Valence Band ◽  
Two Dimensional ◽  
Valence Band Structure ◽  
Quantum Size ◽  
Wide Gap ◽  
Junction Plane ◽  
Short Time

The ionic semiconductor CdF2 that is of extraordinary interest for the modern optics and optoelectronics because of the largest band-gap value, 7.8 eV, from all wide-gap semiconductors and of the n-type conductivity caused by doping with the III group elements and subsequent thermal colouring is used to prepare the ultra-shallow p+- n junctions and p+-Si - n-CdF2 heterostructures by the short-time diffusion of boron from the gas phase. The forward branches of the I-V characteristics of the quantum-size p+-n junctions and heterostructures are shown to reveal not only the CdF2 gap value, but also the CdF2 valence band structure as well thereby identifying the ballistic character of the transport of holes. The studies of the I-V characteristics under the voltage applied along the p+-n junction plane demonstrate the metal conductivity of the two-dimensional hole gas, which seems to be evidence of the formation of the p-CdB2 compounds on the n-CdF2 surface in the process of doping with boron.

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