Open-Ended Coaxial Probes for Nondestructive Testing of Substrates and Circuit Boards

1994 ◽  
Vol 347 ◽  
Author(s):  
James Baker-Jarvis ◽  
Michael D. Janezic

ABSTRACTThe results of the full-wave model theory for the open-ended coaxial probe with lift-off are presented and are applied to measurements of thin materials. The model allows the study of the open-ended coaxial probe as a nondestructive testing tool. The equations presented are valid for both dielectric and magnetic materials. The analysis yields insight into the effects of air gaps on probe measurements. Numerical results indicate that the probe is very sensitive to lift-off at low frequencies. This sensitivity decreases somewhat as frequency increases. In order for the field to penetrate the air gap, larger size coaxial line or higher frequencies need to be used. An application of the theory is performed by numerically solving the inverse problem using measured reflection coefficient.

1994 ◽  
Vol 43 (5) ◽  
pp. 711-718 ◽  
Author(s):  
J. Baker-Jarvis ◽  
M.D. Janezic ◽  
P.D. Domich ◽  
R.G. Geyer

2017 ◽  
Vol 88 (8) ◽  
pp. 084703 ◽  
Author(s):  
D. Jablonskas ◽  
S. Lapinskas ◽  
S. Rudys ◽  
M. Ivanov ◽  
J. Banys

Author(s):  
Agraj Khare ◽  
Priyanka Dwivedi

Abstract Transition-metal Dichalcogenides (TMDs) materials are getting attention in the emerging trends of electronic devices development for a variety of applications. One of such materials is MoS2 which is best suited for developing deeply scaled field effect transistors (FETs). With the plethora of TMDs available, MoS2 is the most widely studied and used material because of its tunable properties like band gap, morphology, optical, structural, electrical, flexible etc. This paper represents the design and simulation aspect of the multi-layered MoS2 Based FET devices. Evidence of change in comparative electrical characteristics of MoS2 based FET devices due to variation of thickness and doping of the gate layer are also presented. In this contribution, we have simulated a full-wave model using the COMSOL Multiphysics module for two different thicknesses 0.7 nm and 1 nm. The FET device with 1 nm MoS2 offers a better dynamic range of operation and has a broader spectrum of threshold potential. The characteristic plots of the 1 nm device showed very less deviation from ideal trends than in the 0.7 nm device. The optimized FET structure offers better performance and efficiency in terms of electrical properties.


Electronics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 299 ◽  
Author(s):  
Myunghoi Kim

An analytical model for metamaterial differential transmission lines (MTM-DTLs) with a corrugated ground-plane electromagnetic bandgap (CGP-EBG) structure in high-speed printed circuit boards is proposed. The proposed model aims to efficiently and accurately predict the suppression of common-mode noise and differential signal transmission characteristics. Analytical expressions for the four-port impedance matrix of the CGP-EBG MTM-DTL are derived using coupled-line theory and a segmentation method. Converting the impedance matrix into mixed-mode scattering parameters enables obtaining common-mode noise suppression and differential signal transmission characteristics. The comprehensive evaluations of the CGP-EBG MTM-DTL using the proposed analytical model are also reported, which is validated by comparing mixed-mode scattering parameters Scc21 and Sdd21 with those obtained from full-wave simulations and measurements. The proposed analytical model provides a drastic reduction of computation time and accurate results compared to full-wave simulation.


2019 ◽  
Vol 16 (8) ◽  
pp. 085601 ◽  
Author(s):  
A L Matveyev ◽  
L A Matveev ◽  
A A Moiseev ◽  
A A Sovetsky ◽  
G V Gelikonov ◽  
...  

Author(s):  
Dazhao Liu ◽  
Argha Nandy ◽  
David Pommerenke ◽  
Soon Jae Kwon ◽  
Ki Hyuk Kim
Keyword(s):  

Sign in / Sign up

Export Citation Format

Share Document