Hydrothermal Processing of BaTiO3/Polymer Films

1994 ◽  
Vol 346 ◽  
Author(s):  
Elliott B. Slamovich ◽  
Ilhan A. Aksay

ABSTRACTHydrothermally derived films of BaTiCO3 were fabricated by reacting thin layers of titanium organometallic liquid precursors in aqueous solutions containing Ba(OH)2 and having a high pH. Cubic submicron polycrystalline films of BaTiCO3 (thickness = 1 μm) were formed at 70°C. Low concentrations of block copolymers of polybutadiene and polystyrene were incorporated into the liquid precursor to prevent precursor film cracking. Higher polymer concentrations allowed fabrication of polymer/ceramic composite films by virtue of the low temperature used in hydrothermal processing.

2019 ◽  
Vol 7 (17) ◽  
pp. 10805-10814
Author(s):  
Weijia Wang ◽  
Tobias Widmann ◽  
Lin Song ◽  
Thomas Fröschl ◽  
Nicola Hüsing ◽  
...  

The durability of titania and titania composite films under mechanical stress is studied and modeled with respect to the morphology.


2015 ◽  
Vol 27 (16) ◽  
pp. 2608-2613 ◽  
Author(s):  
Iñigo Bretos ◽  
Ricardo Jiménez ◽  
Dulce Pérez-Mezcua ◽  
Norberto Salazar ◽  
Jesús Ricote ◽  
...  

2004 ◽  
Vol 53 (11) ◽  
pp. 3818
Author(s):  
Ji Ai-Ling ◽  
Ma Li-Bo ◽  
Liu Cheng ◽  
Wang Yong-Qian

1999 ◽  
Vol 14 (1) ◽  
pp. 246-250 ◽  
Author(s):  
D. Mathur ◽  
G-R. Yang ◽  
T-M. Lu

A new method for depositing parylene-F (PA-F) thin films on silicon substrates has been explored. Hydrogen has been used as a carrier gas along with liquid precursors, dibromotetrafluoro-p-xylene and 1,4-bis(trifluoromethyl)benzene, to deposit PA-F. The properties of this film have been compared with the films obtained by the Gorham dimer method and the liquid precursor method using FTIR, XPS, and XRD. The PA-F films deposited by the dimer or liquid precursor acquired some kind of microcrystallinity on annealing. However, the PA-F films deposited in the presence of hydrogen were amorphous on annealing. This property could be potentially exploited for application in microelectronic device fabrication.


1989 ◽  
Vol 155 ◽  
Author(s):  
K. T. Miller ◽  
F. F. Lange

ABSTRACTEpitaxial, single-crystal films of ZrO2 (Y2O3) were formed on (100) oriented single crystal substrates of ZrO2 (9.5 mol% Y2O3) using water-based solutions of zirconium acetate and yttrium nitrate as a precursor. Film compostions of ZrO2 (0 - 40 mol% Y2O3) were examined; since the lattice parameter of ZrO2 (Y2O3) increases with yttria content, the lattice mismatch was systematically varied to a maximum of 1.5%. Precursor films were deposited by spin coating, pyrolyzed, and held for 1 hour at 900°C, 1000°C, and 1100°C. X-ray diffraction showed that a strongly oriented film had developed after pyrolysis of the precursor. In addition, all samples, except those treated at 1100°C containing 6 – 15 mol% Y2O3, gave (111) peaks, indicating film polycrystallinity. Electron back-scattering patterns showed that epitaxial single crystals were formed at 1100°C for films containing 3 – 20 mol% Y2O3. Scanning electron microscopy showed that the epitaxial films had a porous structure. These results indicate that the epitaxy is a two-stage process: oriented nucleation upon pyrolysis, followed, for low mismatches, by subsequent consolidation into a single-crystal film above 1000°C.


Author(s):  
C. Guénaud ◽  
E. Deleporte ◽  
M. Voos ◽  
C. Delalande ◽  
B. Beaumont ◽  
...  

We report on photoluminescence and photoluminescence excitation experiments performed on hexagonal GaN layers grown on a Sapphire substrate. Information about extrinsic and intrinsic optical properties have been obtained. We show that, at low temperature, the fundamental A excitons are preferentially involved in the relaxation towards the neutral donor bound exciton photoluminescence line, while electron-hole pairs rather participate in the relaxation towards D0−A0 emission and the yellow band. The relaxation from the A exciton towards the yellow band and D0−A0 emission is made easier by temperature. The band structure of the GaN layers has been determined from temperature dependent photoluminescence excitation spectroscopy: A and C excitons and A continuum band gap have been identified up to 210K.


2017 ◽  
Vol 7 (8) ◽  
pp. 2740 ◽  
Author(s):  
Chun-Yu Chien ◽  
Luo-Yi Wu ◽  
Chia-Rong Sheu ◽  
Che-Ju Hsu ◽  
Chi-Yen Huang ◽  
...  

2006 ◽  
Vol 89 (24) ◽  
pp. 242502 ◽  
Author(s):  
X. C. Wang ◽  
W. B. Mi ◽  
E. Y. Jiang ◽  
H. L. Bai

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