scholarly journals Heterogeneous Nucleation of Calcium Oxalate on Native Oxide Surfaces

1994 ◽  
Vol 346 ◽  
Author(s):  
Lin Song ◽  
Michael J. Pattillo ◽  
Gordon L. Graff ◽  
Allison A. Campbell ◽  
Bruce C. Bunker
Keyword(s):  
Calcium Oxalate ◽  
Heterogeneous Nucleation ◽  
Biomimetic Synthesis ◽  
Native Oxide ◽  
Oxide Surfaces ◽  
Constant Composition ◽  
Ceramic Thin Films ◽  
Atomic Force ◽  
Induction Times ◽  
Better Than

ABSTRACTThe aqueous deposition of calcium oxalate onto colloidal oxides has been studied as a model system for understanding heterogeneous nucleation processes of importance in biomimetic synthesis of ceramic thin films. Calcium oxalate nucleation has been monitored by measuring induction times for nucleation using Constant Composition techniques and by measuring nucleation densities on extended oxide surfaces using an atomic force microscope. Results show that the dependence of calcium oxalate nucleation on solution supersaturation fits the functional form predicted by classical nucleation theories. Anionic surfaces appear to promote nucleation better than cationic surfaces, lowering the effective energy barrier to heterogeneous nucleation.

Scaling properties of induction times in heterogeneous nucleation

1991 ◽  
Vol 95 (12) ◽  
pp. 9148-9150 ◽  
Author(s):  
Vitaly A. Shneidman ◽  
Michael C. Weinberg
Keyword(s):  
Heterogeneous Nucleation ◽  
Scaling Properties ◽  
Induction Times

Calcium Oxalate Nucleation and Growth on Oxide Surfaces

1995 ◽  
pp. 341-346
Author(s):  
Lin Song ◽  
Bruce C. Bunker ◽  
Gordon L. Graff ◽  
Michael J. Pattillo ◽  
Allison A. Campbell
Keyword(s):  
Calcium Oxalate ◽  
Nucleation And Growth ◽  
Oxide Surfaces

Synthesis，Film Morphology and Performance on Fabrics of a Novel Amino Functional Polysiloxane

2011 ◽  
Vol 239-242 ◽  
pp. 2981-2985
Author(s):  
Liang Xian Huang ◽  
Xi Ya Zhang ◽  
Qiu Feng An
Keyword(s):  
Cotton Fiber ◽  
Evaluation System ◽  
Chemical Structure ◽  
Wafer Surface ◽  
Root Mean Square Roughness ◽  
Film Morphology ◽  
Mean Square ◽  
Atomic Force ◽  
And Performance ◽  
Better Than

A novel polysiloxane bearing (N,N)-dimethyl-γ-aminopropyl-γ-aminopropyl side groups(ASO-2) was synthesized by copolymerization of octamethylcyclotetrasiloxane with (N,N)-dimethyl-γ-aminopropyl-γ-aminopropyl methyl dimethoxysilane and hexamethyldisiloxane. Chemical structure, film morphology and the softening fabric property of ASO-2 were characterized and investigated by IR, 1H-NMR, SEM, atomic force microscope(AFM) and Kawabata evaluation system(KES).The experiment results indicate that ASO-2 can form a hydrophobic film on both the cotton fiber and silicon wafer surface. The ASO-2 film relatively exhibits a non-homogeneous structure and uneven morphology in its AFM images. Consequently, in 2 μm2 scanning field, the root mean square roughness of ASO-2 film reaches to 0.226 nm, which is 2.69 times rougher as compared with that of N-β-aminoethyl-γ-aminopropyl polysiloxane (ASO-1) film. Application experiments indicate though the tactile of ASO-2 imparted on 100% cotton is somewhat rougher than that of ASO-1, the whiteness and wettability of the cotton treated by ASO-2 are better than those by ASO-1.

The Interface Properties of La2O3/GaAs System by Surface Passivation

2012 ◽  
Vol 557-559 ◽  
pp. 1815-1818 ◽  
Author(s):  
Ting Ting Jia ◽  
Xing Hong Cheng ◽  
Duo Cao ◽  
Da Wei Xu ◽  
You Wei Zhang ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Surface Passivation ◽  
Gate Dielectric ◽  
Surface Preparation ◽  
Atomic Layer ◽  
Native Oxide ◽  
Atomic Force ◽  
Transmission Electron ◽  
Layer Deposition

In this work, La2O3 gate dielectric film was deposited by plasma enhanced atomic layer deposition. we investigate the effect of surface preparation of GaAs substrate, for example, native oxide, S-passivation, and NH3 plasma in situ treatment. The interfacial reaction mechanisms of La2O3 on GaAs is studied by means of X-ray photoelectron spectroscopy(XPS), high-resolution transmission electron microscopy(HRTEM) and atomic force microscope (AFM). As-O bonding is found to get effectively suppressed in the sample GaAs structures with both S-passivation and NH3 plasma surface treatments.

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