Preparation and Property Characterization of Oriented PLZT Thin Films Processed Using Sol-Gel Method

1994 ◽  
Vol 343 ◽  
Author(s):  
Dae Sung Yoon ◽  
Chang Jung Kim ◽  
Joon Sung Lee ◽  
Chaun Gi Choi ◽  
Won Jong Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Heat Treated ◽  
Insertion Method ◽  
Metal Organic ◽  
Dielectric And Optical Properties ◽  
Plzt Thin Films ◽  
Organic Solutions

ABSTRACTHighly preferentially oriented lead lathanum zirconate titanate(PLZT) thin films were fabricated on various substrates using the spin coating of metal organic solutions having the composition of (9/50/50) and (10/0/100). The substrates used in this study were SrTiO3(100), MgO(100), r-plane sapphire, PLT-coated glass, and Pt/Ti/MgO substrates. The films were heat-treated at 600°C and 700°C using the direct insertion method. The phases and the orientation of the PLZT thin films were examined using X-ray diffraction(XRD). Pole figure and X-ray rocking curves were measured to study the film orientation. The films were grown with (100), (110), and (001) plane being parallel to the surfaces of SrTiO3, sapphire, and Pt/Ti/MgO, respectively. The dielectric and optical properties of both the oriented films and the noncrystalline films were measured and discussed.

Epitaxial growth of sol-gel PLZT thin films

1994 ◽  
Vol 9 (2) ◽  
pp. 420-425 ◽  
Author(s):  
Dae Sung Yoon ◽  
Chang Jung Kim ◽  
Joon Sung Lee ◽  
Won Jong Lee ◽  
Kwangsoo No
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Lead Lanthanum Zirconate Titanate ◽  
Lanthanum Zirconate ◽  
Heat Treated ◽  
Pole Figures ◽  
Insertion Method ◽  
Plzt Thin Films ◽  
Organic Solutions

Epitaxial lead lanthanum zirconate titanate [PLZT(9/50/50)] thin films were fabricated on various single crystal substrates using the spin coating of metallo-organic solutions. The films were heat-treated at 700 °C for 1 h using the direct insertion method. The films were epitaxially grown with (100), (100), and (110) being parallel to the SrTiO3(100), the MgO(100), and the sapphire (0112) substrates, respectively. The epitaxy of the films was investigated using x-ray diffraction, pole figures, rocking curves, and scanning electron microscopy.

The Gel Route to TiO2 Photoanodes

1986 ◽  
Vol 73 ◽  
Author(s):  
S. Doeuff ◽  
M. Henry ◽  
C. Sanchez
Keyword(s):  
Anatase Phase ◽  
Sol Gel ◽  
Thermal Stabilization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sol Gel Process ◽  
Metal Organic ◽  
Random Dispersion ◽  
Organic Solutions ◽  
Gel Network

ABSTRACTCr3+ and Al3+ doped TiO2 can be easily made via the sol-gel process. Mixing the metal-organic solutions give rise to a random dispersion of the doping ions into the TiO2 network. Amorphous and crystalline phases have been characterized all the way from the gel to the crystalline products by thermal analysis, X-ray diffraction, vibrational spectroscopy and E.S.R. Organic groups appear to be involved in the formation of the gel network and could lead to a better control of the morphology of the xerogel. A thermal stabilization of the anatase phase, up to 900°C, is observed when Cr3+ is introduced as a dopant. This would lead to the preparation of anatase TiO2 photoanodes.

ITO Thin Films on Silicon Buffer by Sol Gel Method

2006 ◽  
Vol 514-516 ◽  
pp. 1155-1160 ◽  
Author(s):  
Talaat Moussa Hammad
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Optical Transmission ◽  
Sol Gel ◽  
Precursor Solution ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ito Thin Films ◽  
Uv Visible

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.

Sol-Gel derived Bi4-xNdxTi3O12 Thin Films and Their Characterization

2002 ◽  
Vol 737 ◽  
Author(s):  
R.E. Melgarejo ◽  
M.S. Tomar ◽  
A. Hidalgo ◽  
R.S. Katiyar
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Bismuth Titanate ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Complete Solid Solution ◽  
Sol Gel Process ◽  
Ferroelectric Memory ◽  
Initial Results

ABSTRACTNd substituted bismuth titanate Bi4-xNdxTi3O12 were synthesized by sol-gel process and thin films were deposited on Pt substrate (Pt/TiO2/SiO2/Si) by spin coating. Thin films, characterized by X-ray diffraction and Raman spectroscopy, shows complete solid solution up to the composition x < 1. Initial results indicate that the ferroelectric polarization increases with increasing Nd content in the film with 2Pr = 50μC/cm2 for x = 0.46, which may have application in non-volatile ferroelectric memory devices.

Synthesis and Characterizations of Strontium Substituted Hydroxyapatite Thin Films

2010 ◽  
Vol 93-94 ◽  
pp. 231-234
Author(s):  
B. Hongthong ◽  
Satreerat K. Hodak ◽  
Sukkaneste Tungasmita
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Composition ◽  
Spin Coating ◽  
Phase Structure ◽  
Sol Gel ◽  
Cross Linking ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sol Gel Process

Strontium substituted hydroxyapatite(SrHAp) were fabricated both in the form of powder as reference and thin film by using inorganic precursor reaction. The sol-gel process has been used for the deposition of SrHAp layer on stainless steal 316L substrate by spin coating technique, after that the films were annealed in air at various temperatures. The chemical composition of SrHAp is represented (SrxCa1-x)5(PO4)3OH, where x is equal to 0, 0.5 and 1.0. Investigations of the phase structure of SrHAp were carried out by using X-ray diffraction technique (XRD). The results showed that strontium is incorporated into hydroxyapatite where its substitution for calcium increases in the lattice parameters, and Sr3(PO4)2 can be detected at 900°C. The SEM micrographs showed that SrHAp films exhibited porous structure before develop to a cross-linking structure.

Preparation and CO2 Gas Sensitive Properties of CuO-SrTiO3-Based Semiconductor Thin Films

2007 ◽  
Vol 280-283 ◽  
pp. 311-314 ◽  
Author(s):  
Yan Fei Gu ◽  
Hui Ming Ji ◽  
Bin Zhang ◽  
Ting Xian Xu
Keyword(s):  
Thin Films ◽  
Chelating Agents ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Good Resistance ◽  
Gas Sensitivity ◽  
X Ray ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Ft Ir

CuO-SrTiO3-based thin films were prepared by novel sol-gel technology on Al2O3 substrates using Cu(NO3)2, SrCl2 and TiCl4 as the starting materials, critic acid and ethylene glycol as chelating agents. CO2 sensing properties of the films were investigated. Structure characteristics of the sol and asgrown thin films were analyzed by FT-IR spectrum, X-ray diffraction and SEM. The results reveal that the films consisted of CuO phase and SrTiO3 phase have nanocrystalline microstructure at 750°C for 40 min. The modified CuO-SrTiO3 thin films exhibit good resistance-temperature and gas sensitivity properties in a wide range of temperature. The films exposed to 6% CO2 show that sensitivity are 32, and response and recover time are within 2 s at 250 °C operating temperature.

Dielectric Properties of Sol-Gel Derived MgAl2O4 Thin Films

2012 ◽  
Vol 151 ◽  
pp. 314-318
Author(s):  
Ching Fang Tseng ◽  
Cheng Hsing Hsu ◽  
Chun Hung Lai
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dissipation Factor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Preheating Temperature ◽  
Surface Morphologies

This paper describes microstructure characteristics of MgAl2O4 thin films were deposited by sol-gel method with various preheating temperatures and annealing temperatures. Particular attention will be paid to the effects of a thermal treatment in air ambient on the physical properties. The annealed films were characterized using X-ray diffraction. The surface morphologies of treatment film were examined by scanning electron microscopy and atomic force microscopy. At a preheating temperature of 300oC and an annealing temperature of 700oC, the MgAl2O4 films with 9 μm thickness possess a dielectric constant of 9 at 1 kHz and a dissipation factor of 0.18 at 1 kHz.

SiO2ZrO2 Thin Films as Low Temperature NO2 and O3 Sensors

2015 ◽  
Vol 1088 ◽  
pp. 81-85 ◽  
Author(s):  
T.N. Myasoedova ◽  
Victor V. Petrov ◽  
Nina K. Plugotarenko ◽  
Dmitriy V. Sergeenko ◽  
Galina Yalovega ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Low Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Operating Temperatures ◽  
Scanning Electron

Thin SiO2ZrO2films were prepared, up to 0.2 μm thick, by means of the sol–gel technology and characterized by a Scanning electron microscopy and X-ray diffraction. It is shown the presence of monoclinic, cubic and tetragonal phases of ZrO2in the SiO2matrix. The crystallites sizes depend on the annealing temperature of the film and amount to 35 and 56 nm for the films annealed at 773 and 973 K, respectively. The films resistance is rather sensitive to the presence of NO2and O3impurity in air at lower operating temperatures in the range of 30-60°C.

Sol-gel processing of nanocrystalline haematite thin films

1997 ◽  
Vol 12 (6) ◽  
pp. 1441-1444 ◽  
Author(s):  
L. Armelao ◽  
A. Armigliato ◽  
R. Bozio ◽  
P. Colombo
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Single Particles ◽  
X Ray ◽  
Transmission Electron ◽  
Gel Processing

The microstructure of Fe2O3 sol-gel thin films, obtained from Fe(OCH2CH3)3, was investigated by x-ray diffraction (XRD), transmission electron microscopy (TEM), and Raman spectroscopy. Samples were nanocrystalline from 400 °C to 1000 °C, and the crystallized phase was haematite. In the coatings, the α–Fe2O3 clusters were dispersed as single particles in a network of amorphous ferric oxide.

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