Thin Films of SrFeO2.5+x - Effect of Preferred Orientation on Oxygen Uptake

1994 ◽  
Vol 343 ◽  
Author(s):  
Brian W. Sanders ◽  
Jianhua Yao ◽  
Michael L. Post
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Oxygen Uptake ◽  
Growth Temperature ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Oriented Films

ABSTRACTPulsed laser ablation has been used to deposit thin films of SrFeO25+x (x = 0 to ≈0.5). Previous work has shown that the orientation of the films, determined by powder x-ray diffraction depended strongly upon the deposition temperature. Films grown below 770 K showed little or no orientation. A growth temperature of 900 K resulted in films oriented (200). Growth temperatures of > 1000 K produced films oriented predominantly (110). At 673 K in an oxygen atmosphere, oriented films readily converted from the oxygen deficient brownmillerite form (x=0) to the oxygen rich cubic (or distorted cubic) perovskite form (x≈0.3). Films which exhibited no initial orientation did not react with oxygen under these conditions. Cycling non-oriented films between 230 and 800 ppm of oxygen in 101.3 kPa of nitrogen at 673 K resulted in weak (110) orientation. Once oriented, the films reacted readily with oxygen and exhibited measurable resistance changes. The conversion from oxygen deficient to oxygen rich form was monitored by x-ray diffraction and the DC resistance of the films.

Characterization of BaTiO3 Thin Films Deposited by Pulsed-Laser Ablation

1990 ◽  
Vol 201 ◽  
Author(s):  
Christopher Scarfone ◽  
M. Grant Norton ◽  
C. Barry Carter ◽  
Jian Li ◽  
James W. Mayer
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Film Surface ◽  
Pulsed Laser Ablation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Channeling ◽  
Very High

AbstractThin films of barium titanate (BaTiOs) have been deposited by pulsed-laser ablation onto (001)-oriented MgO substrates. The films were epitactic as evidenced by both x-ray diffraction and ion-channeling techniques. The film surface appeared smooth and contained a low density of particulates. This latter feature is believed to be due to the formation of target pellets having a very high density.

Synthesis of thin films of polycrystalline ferroelectric BiNbO4 on Si by pulsed laser ablation

1998 ◽  
Vol 13 (5) ◽  
pp. 1113-1116 ◽  
Author(s):  
Soma Chattopadhyay ◽  
Pushan Ayyub ◽  
R. Pinto ◽  
M. S. Multani
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Polycrystalline Thin Films ◽  
Ambient Oxygen

The stibiotantalite (ABO4) family includes a number of ferroelectrics and antiferroelectrics with excellent potential for applications. We report the deposition of phase-pure, polycrystalline thin films of BiNbO4 on Si(100) substrates using pulsed laser ablation. The deposition conditions were optimized with respect to substrate temperature, laser parameters, and the ambient oxygen pressure. The films were characterized by x-ray diffraction, energy dispersive x-ray analysis, and Raman spectroscopy, while their microstructure was studied by atomic force microscopy and scanning electron microscopy. Dielectric hysteresis studies indicated that films with a thickness below ≈250 nm are ferroelectric, while thicker ones are antiferroelectric.

Microstructure and Thermoelectric Properties of p-Type Bi0.5Sb1.5Te3 and n-Type Bi2Te2.7Se0.3 Films Deposited by Pulsed Laser Ablation

2001 ◽  
Vol 691 ◽  
Author(s):  
Raghuveer S. Makala ◽  
K. Jagannadham ◽  
B.C. Sales ◽  
Hsin Wang
Keyword(s):  
Laser Ablation ◽  
Thermoelectric Properties ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Uniform Thickness ◽  
X Ray Diffraction ◽  
High Crystalline Quality ◽  
X Ray ◽  
Crystal Perfection ◽  
P Type

ABSTRACTThin films of p-type Bi0.5Sb1.5Te3, n-type Bi2Te2.7Se0.3 and n-type with SbI3 doping were deposited on mica substrates using Nd-YAG pulsed laser ablation at temperatures ranging from 300°C to 500°C. These films were characterized using X-ray diffraction, SEM and TEM. X-ray mapping and EDS were used to determine the composition. The films showed uniform thickness and high crystalline quality with a preferred (00n) alignment with the substrates. The film quality in terms of composition and crystal perfection is studied as a function of growth temperature. It was found that films deposited at 350°C gave improved crystallinity and thermoelectric characteristics. The Seebeck coefficient, electrical resistivity and Hall mobility were measured as a function of temperature and compared with the measurements on the bulk. Correlation of thermoelectric properties with microstructure is discussed.

SYNTHESIS OF ULTRAFINE/NANOSIZE POWDERS OF IRON OXIDES BY PULSED LASER ABLATION AND COLD CONDENSATION

1996 ◽  
Vol 10 (30) ◽  
pp. 1517-1527 ◽  
Author(s):  
S. R. SHINDE ◽  
A. G. BANPURKAR ◽  
K. P. ADHI ◽  
A. V. LIMAYE ◽  
S. B. OGALE ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Vibrating Sample Magnetometry ◽  
X Ray Diffraction ◽  
X Ray ◽  
Excimer Laser Ablation ◽  
Nanosize Particles ◽  
Cold Condensation ◽  
Scanning Electron

Ultrafine/nanosize powders of iron oxide have been synthesized from a sintered α- Fe 2 O 3 target by pulsed excimer laser ablation and cold condensation. The influence of target porosity and temperature of condensation on the formation of nanosize particles has been studied. The nanosize powders have been characterized by X-ray diffraction, Mössbauer spectroscopy, vibrating sample magnetometry and scanning electron microscopy. It is shown that the formation of ultrafine/nanosize particles is strongly governed by the target porosity, whereas, the temperature of condensation, over a range from 27°C to −130°C, does not affect the magnetic properties of the nanoparticles.

scholarly journals Deposit of AlN thin films by nitrogen reactive pulsed laser ablation using an Al target

2019 ◽  
Vol 65 (4 Jul-Aug) ◽  
pp. 345 ◽  
Author(s):  
F. Chale-Lara ◽  
M. Zapata-Torres ◽  
F. Caballero-Briones ◽  
W. De la Cruz ◽  
N. Cruz Gonzalez ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Photoelectron Spectroscopy ◽  
Hexagonal Phase ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Nitrogen Pressure ◽  
Binding Energies ◽  
Xps Spectra ◽  
X Ray

We report the synthesis of AlN hexagonal thin films by pulsed laser ablation, using Al target in nitrogen ambient over natively-oxidized Si (111) at 600°C. Composition and chemical state were determined by X-ray photoelectron spectroscopy (XPS); while structural properties were investigated using X-ray diffraction (XRD). High-resolution XPS spectra present a gradual shift to higher binding energies on the Al2ppeak when nitrogen pressure is incremented, indicating the formation of the AlN compound. At 30 mTorr nitrogen pressure, theAl2p peak corresponds to AlN, located at 73.1 eV, and the XRD pattern shows a hexagonal phase of AlN. The successful formation of the AlN compound is corroborated by UV-Vis reflectivity measurements.

Effect of growth temperature on the magnetic, microwave, and cation inversion properties on NiFe2O4 thin films deposited by pulsed laser ablation deposition

2007 ◽  
Vol 101 (9) ◽  
pp. 09M517 ◽  
Author(s):  
C. N. Chinnasamy ◽  
S. D. Yoon ◽  
Aria Yang ◽  
Ashish Baraskar ◽  
C. Vittoria ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Growth Temperature ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation

scholarly journals Synthesis of gold nanoparticles by laser ablation on porous silicon for sensing CO2 gas

2018 ◽  
Vol 16 (36) ◽  
pp. 1-10
Author(s):  
Uday Muhsin Nayef
Keyword(s):  
Laser Ablation ◽  
Porous Silicon ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
X Ray Diffraction ◽  
Laser Ablation In Liquid ◽  
Co2 Gas ◽  
X Ray ◽  
P Type ◽  
Si Wafer

In this research, porous silicon (PS) prepared by anodization etching on surface of single crystalline p-type Si wafer, then Gold nanoparticle (AuNPs) prepared by pulsed laser ablation in liquid. NPs deposited on PS layer by drop casting. The morphology of PS, AuNPs and AuNPs/PS samples were examined by AFM. The crystallization of this sample was characterized by X-ray diffraction (XRD). The electrical properties and sensitivity to CO2 gas were investigated to Al/AuNPs/PS/c-Si/Al, we found that AuNPs plays crucial role to enhance this properties.

Tem Investigation of Growth Temperature Dependence in Pulsed-Laser Ablated PLZT Films for Pyroelectric Applications

1999 ◽  
Vol 596 ◽  
Author(s):  
R. N. Jacobs ◽  
R. P. Godfrey ◽  
W. L. Sarney ◽  
C. W. Tipton ◽  
L. Salamanca-Riba
Keyword(s):  
Growth Temperature ◽  
Deposition Temperature ◽  
Structural Characteristics ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Domain Orientation ◽  
X Ray ◽  
Transmission Electron ◽  
Diffraction Patterns

AbstractTransmission electron microscopy is used to examine the structural characteristics of Pb0.9La0.1Zr0.2Ti0.8O3 (PLZT) films grown directly on single crystal LaAlO3 (LAO) substrates. In particular, the domain orientation and film epitaxial quality as a function of substrate deposition temperature are obtained in the range 500–650°C and compared to x-ray diffraction results. High-resolution cross sectional images and electron diffraction patterns confirm that domain orientation and overall epitaxial quality can be optimized with growth temperature. In addition, these results show a direct correlation with pyroelectric measurements obtained for capacitor structures incorporating La1−xSrxCoO3 (LSCO) top and bottom electrodes.

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