Interface Reaction Kinetics for Permalloy-Tantalum Thin Film Couples

1994 ◽  
Vol 343 ◽  
Author(s):  
A.J. Kellock ◽  
J.E.E. Baglin ◽  
K.R. Coffey ◽  
J.K. Howard ◽  
M.A. Parker ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundaries ◽  
Reaction Kinetics ◽  
Interface Reaction ◽  
Nucleation And Growth ◽  
Fast Diffusion ◽  
Temperature Range

ABSTRACTThermal interdiffusion mechanisms and kinetics have been studied for Ta-Permalloy (Ni80Fe20), Ta-Ni and Ta-Fe thin film couples, in the temperature range 300°C - 600°C. Interaction modes identified for the Ta-NiFe system include: fast diffusion of Ta into grain boundaries of NiFe, and nucleation and growth of Ni3Ta, with consequent depletion of Ni in the remaining NiFe, and eventual segregation of Fe.

scholarly journals Material Properties of Zr–Cu–Ni–Al Thin Films as Diffusion Barrier Layer

Crystals ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 540 ◽  
Author(s):  
Po-Hsien Sung ◽  
Tei-Chen Chen
Keyword(s):  
Thin Film ◽  
Grain Boundaries ◽  
Barrier Layer ◽  
Fast Diffusion ◽  
Quenching Rate ◽  
Cu Metallization ◽  
Diffusion Barrier Layer ◽  
Diffusion Paths ◽  
Reliability Issue ◽  
Almost All

Due to the rapid increase in current density encountered in new chips, the phenomena of thermomigration and electromigration in the solder bump become a serious reliability issue. Currently, Ni or TiN, as a barrier layer, is widely academically studied and industrially accepted to inhibit rapid copper diffusion in interconnect structures. Unfortunately, these barrier layers are polycrystalline and provide inadequate protection because grain boundaries may presumably serve as fast diffusion paths for copper and could react to form Cu–Sn intermetallic compounds (IMCs). Amorphous metallic films, however, have the potential to be the most effective barrier layer for Cu metallization due to the absence of grain boundaries and immiscibility with copper. In this article, the diffusion properties, the strength of the interface between polycrystalline and amorphous ZrCuNiAl thin film, and the effects of quenching rate on the internal microstructures of amorphous metal films were individually investigated by molecular dynamics (MD) simulation. Moreover, experimental data of the diffusion process for three different cases, i.e., without barrier layer, with an Ni barrier layer, and with a Zr53Cu30Ni9Al8 thin film metallic glass (TFMG) barrier layer, were individually depicted. The simulation results show that, for ZrCuNiAl alloy, more than 99% of the amorphous phase at a quenching rate between 0.25 K/ps and 25 K/ps can be obtained, indicating that this alloy has superior glass-forming ability. The simulation of diffusion behavior indicated that a higher amorphous ratio resulted in better barrier performance. Moreover, a very small and uniformly distributed strain appears in the ZrCuNiAl layer in the simulation of the interfacial tension test; however, almost all the voids are initiated and propagated in the Cu layer. These phenomena indicate that the strength of the ZrCuNiAl/Cu interface and ZrCuNiAl layer is greater than polycrystalline Cu. Experimental results show that the Zr53Cu30Ni9Al8 TFMG layer exhibits a superior barrier effect. Almost no IMCs appear in this TFMG barrier layer even after aging at 125 °C for 500 h.

scholarly journals Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Jae Hyo Park ◽  
Hyung Yoon Kim ◽  
Gil Su Jang ◽  
Ki Hwan Seok ◽  
Hee Jae Chae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Boundaries ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ferroelectric Thin Film ◽  
Atomic Layer ◽  
Nucleation And Growth ◽  
Test Results ◽  
Effect Transistor

Abstract The development of ferroelectric random-access memory (FeRAM) technology with control of grain boundaries would result in a breakthrough for new nonvolatile memory devices. The excellent piezoelectric and electrical properties of bulk ferroelectrics are degraded when the ferroelectric is processed into thin films because the grain boundaries then form randomly. Controlling the nature of nucleation and growth are the keys to achieving a good crystalline thin-film. However, the sought after high-quality ferroelectric thin-film has so far been thought to be impossible to make, and research has been restricted to atomic-layer deposition which is extremely expensive and has poor reproducibility. Here we demonstrate a novel epitaxial-like growth technique to achieve extremely uniform and large rectangular-shaped grains in thin-film ferroelectrics by dividing the nucleation and growth phases. With this technique, it is possible to achieve 100-μm large uniform grains, even made available on Si, which is large enough to fabricate a field-effect transistor in each grain. The electrical and reliability test results, including endurance and retention test results, were superior to other FeRAMs reported so far and thus the results presented here constitute the first step toward the development of FeRAM using epitaxial-like ferroelectric thin-films.

Diffraction effects from inclined grain boundaries in polycrystalline thin foils

1978 ◽  
Vol 36 (1) ◽  
pp. 420-421
Author(s):  
C.B. Carter ◽  
A.M. Donald ◽  
S.L. Sass
Keyword(s):  
Thin Film ◽  
Grain Boundaries ◽  
Boundary Plane ◽  
Foil Surface ◽  
Thin Foils ◽  
The Matrix ◽  
Firm Basis ◽  
Diffraction Patterns ◽  
Wave Matching ◽  
Diffraction Effects

Using thin-film gold bicrystals with the boundary plane parallel to the foil surface, it has been shown(l,2) that networks of grain boundary dislocations can act as diffraction gratings and give rise to subsidiary reflections close to the matrix reflections in electron diffraction patterns. Recently several groups of workers(3-5) have shown that inclined boundaries in polycrystalline specimens also produce extra reflections which may be due to the periodic nature of the boundaries. In general grain boundaries in polycrystalline specimens will be steeply inclined to the foil surface and additional reflections due to wave matching at the boundary(6) will also be present. The diffraction technique has the potential for providing detailed information on the structure of inclined boundaries (see, for example (5)), especially for the case where the image contains no useful information. In order to provide a firm basis for this technique, the geometry of the diffraction effects expected from inclined boundaries and the influence of these effects on the appearance of images will be examined.

The nucleation of cavities at grain boundaries

1987 ◽  
Vol 45 ◽  
pp. 288-291
Author(s):  
P. J. Goodhew
Keyword(s):  
Surface Tension ◽  
Surface Energy ◽  
Grain Boundaries ◽  
Radiation Damage ◽  
Impurity Concentration ◽  
Driving Force ◽  
Nucleation And Growth ◽  
Phase Boundaries ◽  
Cavity Nucleation ◽  
Spherical Bubble

Cavity nucleation and growth at grain and phase boundaries is of concern because it can lead to failure during creep and can lead to embrittlement as a result of radiation damage. Two major types of cavity are usually distinguished: The term bubble is applied to a cavity which contains gas at a pressure which is at least sufficient to support the surface tension (2g/r for a spherical bubble of radius r and surface energy g). The term void is generally applied to any cavity which contains less gas than this, but is not necessarily empty of gas. A void would therefore tend to shrink in the absence of any imposed driving force for growth, whereas a bubble would be stable or would tend to grow. It is widely considered that cavity nucleation always requires the presence of one or more gas atoms. However since it is extremely difficult to prepare experimental materials with a gas impurity concentration lower than their eventual cavity concentration there is little to be gained by debating this point.

Domain coarsening by grain boundary migration in ordered Ni4Mo

1986 ◽  
Vol 44 ◽  
pp. 560-561
Author(s):  
K. Vasudevan ◽  
H. P. Kao ◽  
C. R. Brooks ◽  
E. E. Stansbury
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Short Range ◽  
Boundary Migration ◽  
Grain Boundary Migration ◽  
Rapid Cooling ◽  
Temperature Range ◽  
Fee Structure ◽  
Domain Coarsening ◽  
Boundary Reaction

The Ni4Mo alloy has a short-range ordered fee structure (α) above 868°C, but transforms below this temperature to an ordered bet structure (β) by rearrangement of atoms on the fee lattice. The disordered α, retained by rapid cooling, can be ordered by appropriate aging below 868°C. Initially, very fine β domains in six different but crystallographically related variants form and grow in size on further aging. However, in the temperature range 600-775°C, a coarsening reaction begins at the former α grain boundaries and the alloy also coarsens by this mechanism. The purpose of this paper is to report on TEM observations showing the characteristics of this grain boundary reaction.

Study of C2H5O2 using modulated photolysis: ultra-violet spectrum and self-reaction kinetics in the temperature range 233-363 K

1997 ◽  
Vol 94 ◽  
pp. 484-502
Author(s):  
S Fauvet ◽  
JP Ganne ◽  
J Brion ◽  
D Daumont ◽  
J Malicet ◽  
...  
Keyword(s):  
Reaction Kinetics ◽  
Ultra Violet ◽  
Temperature Range

Inhomogeneous Swelling Near Grain Boundaries in Irradiated Materials: Cavity Nucleation and Growth Saturation Effects

2000 ◽  
Vol 650 ◽  
Author(s):  
S. L. Dudarev
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Nucleation And Growth ◽  
Homogeneous Distribution ◽  
Rate Theory ◽  
Diffusional Growth ◽  
Standard Rate ◽  
Saturation Effects ◽  
Kinetics Of ◽  
Cascade Damage

ABSTRACTThe effect of inhomogeneous nucleation and growth of cavities near grain boundaries illustrates the failure of the standard rate theory to describe the kinetics of phase transformations in irradiated materials under cascade damage conditions. The enhanced swelling observed near grain boundaries is believed to result from the competition between the diffusional growth of cavities and their shrinkage due to the interaction with mobile interstitial clusters. Swelling rates associated with the two processes behave in a radically different way as a function of the size of growing cavities. For a spatially homogeneous distribution of cavities this gives rise to the saturation of swelling in the limit of large irradiation doses.We investigate the evolution of the population of cavities nucleating and growing near a planar grain boundary. We show that a cavity growing near the boundary is able to reach a size that is substantially larger than the size of a cavity growing in the interior region of the grain. For a planar grain boundary the magnitude of swelling at maximum is found to be up to eight times higher than the magnitude of swelling in the grain interior.

scholarly journals Orientation transitions during the growth of imine covalent organic framework thin films

2017 ◽  
Vol 5 (21) ◽  
pp. 5090-5095 ◽  
Author(s):  
H. Wang ◽  
B. He ◽  
F. Liu ◽  
C. Stevens ◽  
M. A. Brady ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Experimental Observation ◽  
Growth Kinetic ◽  
Film Growth ◽  
Nucleation And Growth ◽  
Thin Film Growth ◽  
Covalent Organic Framework ◽  
Kinetic Processes ◽  
Organic Framework

The first experimental observation of a rare re-entrant transition during COF thin film growth reveals independent nucleation and growth kinetic processes.

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