Large Area Pulsed Laser Deposition of YBCO Thin Films and Buffer Layers on 3-Inch Wafers

1994 ◽  
Vol 341 ◽  
Author(s):  
M. Lorenz ◽  
H. Hochmuth ◽  
H. Börner ◽  
D. Natusch ◽  
K. Kreher
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Thickness Distribution ◽  
Buffer Layers ◽  
Large Area ◽  
Promising Technique ◽  
Laser Plume ◽  
Ybco Thin Films ◽  
Epitaxial Oxide

AbstractAn arrangement for large area PLD on 3-inch wafers is proposed. In order to get a homogeneous stoichiometry and thickness distribution and small variations of superconducting properties on the 3-inch diameter, the substrate is foreseen to be rotated and additionally laterally moved up to 45 mm during deposition whereas the laser plume remains fixed.YSZ buffer layers showed thickness homogeneity of 1% within 10 mm, of 4% within 2 inch and of 8% within 3 inch diameter, respectively. For in-situ deposited YBCO thin films on r-plane sapphire with YSZ buffer layer we inductively measured within 3 inch diameter values of the critical temperature Tc(90%) from 85.9 K to 86.7 K and values of the critical current density jc(77 K) from 1 × 106 to 2 × 106 A/cm2. However, up to now the degree of epitaxy of the YBCO thin films on r-plane sapphire with YSZ buffer layer is lower compared to YBCO on MgO(100) as determined by Raman spectroscopy. Nevertheless, large area PLD seems to be a very promising technique for homogeneous coating of 3-inch wafers by epitaxial oxide thin films.

Processing of Y1Ba2Cu3O7-x Superconducting Thin Films on GaAs Substrates with Double Buffer Layers

1991 ◽  
Vol 236 ◽  
Author(s):  
Sang Yeol Lee ◽  
Quanxi Jia ◽  
Wayne A. Anderson ◽  
David T. Shaw
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Film Deposition ◽  
Buffer Layers ◽  
Deposition Condition ◽  
Gaas Substrates ◽  
Ybco Thin Films ◽  
Layer Deposition ◽  
Zero Resistance

AbstractHigh temperature superconducting Y1Ba2Cu3O7-x(YBCO) thin films have been grown on GaAs substrates by in situ laser deposition with a double buffer layer of yttrium-stabilized ZrO2 (YSZ)/Si3N4. A barrier layer using a combination of YSZ/Si3N4 was used to grow high quality YBCO thin films without the degradation of the GaAs during YBCO film deposition. Strongly c-axis oriented superconducting YBCO thin films with a zero resistance temperature of 85.5 K and a critical current density of 1.9x103 A/cm2 at 77 K have been obtained. The electrical properties of the YBCO thin films were mainly dependent on YSZ buffer layer deposition condition.

Processing of Y1Ba2Cu3O7−x Superconducting Thin Films on GaAs Substrates with Double Buffer Layers

1991 ◽  
Vol 235 ◽  
Author(s):  
Sang Yeol Lee ◽  
Quanxi Jia ◽  
Wayne A. Anderson ◽  
David T. Shaw
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Film Deposition ◽  
Buffer Layers ◽  
Deposition Condition ◽  
Gaas Substrates ◽  
Ybco Thin Films ◽  
Layer Deposition ◽  
Zero Resistance

ABSTRACTHigh temperature superconducting Y1Ba2Cu3O7−x(YBCO) thin films have been grown on GaAs substrates by in situ laser deposition with a double buffer layer of yttrium-stabilized ZrO2(YSZ)/Si3N4. A barrier layer using a combination of YSZ/Si3N4 was used to grow high quality YBCO thin films without the degradation of the GaAs during YBCO film deposition. Strongly c-axis oriented superconducting YBCO thin films with a zero resistance temperature of 85.5 K and a critical current density of 1.9×103 A/cm2 at 77 K have been obtained. The electrical properties of the YBCO thin films were mainly dependent on YSZ buffer layer deposition condition.

In-Situ Laser Processing and Microstructural Characteristics of YBa2Cu3O7−δ Thin Films on Si with TiN Buffer Layer

1992 ◽  
Vol 285 ◽  
Author(s):  
P. Tiwari ◽  
T. Zheleva ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transition Temperature ◽  
Buffer Layer ◽  
Processing Parameters ◽  
Superconducting Transition ◽  
Epitaxial Relationship ◽  
Ybco Thin Films ◽  
Zero Resistance

ABSTRACTWe have prepared high-quality superconducting YBa2Cu3O7−δ (YBCO) thin films on Si(100) with TiN as a buffer layer using in-situ multitarget deposition system. Both TiN and YBCO thin films were deposited sequentially by KrF excitner laser ( λ = 248 nm ) at substrate temperature of 650°C. Thin films were characterized using X-ray diffraction (XRD), four-point-probe ac resistivity, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Rutherford backscattering (RBS). The TiN buffer layer was epitaxial and the epitaxial relationship was found to be cube on cube with <100> TiN // <100> Si. YBCO thin films on Si with TiN buffer layer showed the transition temperature of 90–92K with Tco (zero resistance temperature) of ∼84K. We have found that the quality of the buffer layer is very important in determining the superconducting transition temperature of the thin film. The effects of processing parameters and the correlation of microstructural features with superconducting properties are discussed indetail.

Properties of in-situ laser-pulsed deposited YBCO thin films on MgO with SrTiO3 buffer layer

1996 ◽  
Vol 260 (1-2) ◽  
pp. 111-116 ◽  
Author(s):  
V. Boffa ◽  
T. Petrisor ◽  
L. Ciontea ◽  
U. Gambardella ◽  
S. Barbanera
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Ybco Thin Films

Epitaxial Relationships of the a-Axis Oriented YBa2Cu3O7-x Thin Films on the PrBa2Cu3O7-xTx Buffered SrTiO3(100) by two Step PLD

1994 ◽  
Vol 341 ◽  
Author(s):  
Gun Yong Sung ◽  
Jeong Dae Suh ◽  
Sahn Nahm
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Volume Fraction ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Superconducting Properties ◽  
Ybco Thin Film ◽  
Axis Orientation ◽  
Ybco Thin Films ◽  
Zero Resistance

AbstractAn a-axis oriented YBa2Cu3O7-x (YBCO) thin film exhibiting zero resistance at 83 K and critical current density of 7.9x103 A/cm2 at 62 K was obtained on an 180 nm - thick PrBa2Cu3 O7-xx(PBCO) buffered SrTiO3(100) substrate by two step pulsed laser deposition (PLD). The volume fraction of a-axis orientation and the crystallinity(Xmin) of the 150 nm-thick YBCO thin films were increased with increasing the thickness of PBCO buffer layer, which was varied friom 0 nm to 180 nm. It is concluded that the thickness of PBCO buffer layer is one of the important parameters to control the structural and superconducting properties of the a-axis oriented YBCO thin films using the PBCO buffer layers.

scholarly journals Fabrication of YBa2Cu3Oy Thin Films on Textured Buffer Layers grown by Plasma Beam Assisted Deposition

1997 ◽  
Vol 50 (2) ◽  
pp. 381 ◽  
Author(s):  
M. Fukutomi ◽  
S. Kumagai ◽  
H. Maeda
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Large Scale ◽  
Buffer Layers ◽  
Weak Links ◽  
Large Area ◽  
Ybco Films ◽  
Metallic Substrates ◽  
Plasma Beam ◽  
A New Technique

A new technique named plasma beam assisted deposition (PBAD) is proposed to grow in-plane textured yttria-stabilised zirconia (YSZ) thin films on polycrystalline metallic substrates as a buffer layer for deposition of YBa2Cu3Oy (YBCO) films. The in-plane texturing of the YBCO films obtained is decisively governed by that of the YSZ buffer layer on which the YBCO grows. Because of a reduction of the weak links at high-angle grain boundaries, a marked increase in the critical current density Jc is observed with improved texturing of the YBCO films. So far, it has been demonstrated that YBCO films with Jc above 105 A cm-2 (77 K, 0 T) can be successfully deposited by a laser ablation technique. The PBAD process proposed here is found to be valuable technologically because it offers a very convenient method to grow textured films on long tape or large area substrates. An attempt was also made to grow textured films simultaneously on one side or both sides of various pieces of tape substrates. The results indicate that PBAD is one potential technique for future large scale application of YBCO films.

Continued improvement of large area, in situ sputter deposition of superconducting YBCO thin films

1993 ◽  
Vol 3 (1) ◽  
pp. 1679-1682 ◽  
Author(s):  
J.K. Truman ◽  
W.R. White ◽  
P.H. Ballentine ◽  
D.S. Mallory ◽  
A.M. Kadin
Keyword(s):  
Thin Films ◽  
Sputter Deposition ◽  
Large Area ◽  
Ybco Thin Films

In-Situ Study of NiO Growth on Textured Nickel Tape Using Environmental Scanning Electron Microscope (ESEM) and Hot Stage

2001 ◽  
Vol 7 (S2) ◽  
pp. 1276-1277
Author(s):  
Y. Akin ◽  
R.E. Goddard ◽  
W. Sigmund ◽  
Y.S. Hascicek
Keyword(s):  
Buffer Layer ◽  
Lattice Mismatch ◽  
Sol Gel ◽  
Surface Oxidation ◽  
Dip Coating ◽  
Buffer Layers ◽  
Superconducting Film ◽  
Environmental Scanning ◽  
Cold Rolling And Annealing

Deposition of highly textured ReBa2Cu3O7−δ (RBCO) films on metallic substrates requires a buffer layer to prevent chemical reactions, reduce lattice mismatch between metallic substrate and superconducting film layer, and to prevent diffusion of metal atoms into the superconductor film. Nickel tapes are bi-axially textured by cold rolling and annealing at appropriate temperature (RABiTS) for epitaxial growth of YBa2Cu3O7−δ (YBCO) films. As buffer layers, several oxide thin films and then YBCO were coated on bi-axially textured nickel tapes by dip coating sol-gel process. Biaxially oriented NiO on the cube-textured nickel tape by a process named Surface-Oxidation- Epitaxy (SEO) has been introduced as an alternative buffer layer. in this work we have studied in situ growth of nickel oxide by ESEM and hot stage.Representative cold rolled nickel tape (99.999%) was annealed in an electric furnace under 4% hydrogen-96% argon gas mixture at 1050°C to get bi-axially textured nickel tape.

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

scholarly journals Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2635-2640 ◽  
Author(s):  
Adele Moatti ◽  
Reza Bayati ◽  
Srinivasa Rao Singamaneni ◽  
Jagdish Narayan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Frequency Factor ◽  
Misfit Strain ◽  
Buffer Layers ◽  
Intrinsic Defects ◽  
Domain Matching Epitaxy ◽  
Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

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