MBE Growth and Characterization of II-VI Blue/Green Laser Diodes Having CW Operation at Room Temperature

1994 ◽  
Vol 340 ◽  
Author(s):  
M.D. Ringle ◽  
D.C. Grillo ◽  
Y. Fan ◽  
L. He ◽  
J. Han ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Threshold Current ◽  
Green Laser ◽  
Operating Voltage ◽  
Mbe Growth ◽  
Current Densities ◽  
P Type ◽  
Laser Devices

ABSTRACTWe have obtained continuous-wave laser operation at room temperature from a (Zn,Mg)(S,Se)-based Il-VI separate-confinement heterostructure where injection of holes into the p-type quaternary was achieved through the employment of a Zn(Se,Te) graded-bandgap contact. The laser devices exhibit threshold current densities of below 300 A/cm2 and voltages below 6 V. Issues related to the control of the growth of the quaternary (Zn,Mg)(S,Se) compound, and a proposal to further reducing the laser operating voltage will also be described.

scholarly journals Numerical Investigation of the Impact of ITO, AlInN, Plasmonic GaN and Top Gold Metalization on Semipolar Green EELs

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1444
Author(s):  
Maciej Kuc ◽  
Łukasz Piskorski ◽  
Maciej Dems ◽  
Michał Wasiak ◽  
Adam K. Sokół ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Threshold Current ◽  
Partial Replacement ◽  
Structural Modifications ◽  
New Material ◽  
Current Densities ◽  
Emitting Lasers ◽  
P Type ◽  
The Impact ◽  
Cladding Layers

In this paper, we present the results of a computational analysis of continuous-wave (CW) room-temperature (RT) semipolar InGaN/GaN edge-emitting lasers (EELs) operating in the green spectral region. In our calculations, we focused on the most promising materials and design solutions for the cladding layers, in terms of enhancing optical mode confinement. The structural modifications included optimization of top gold metalization, partial replacement of p-type GaN cladding layers with ITO and introducing low refractive index lattice-matched AlInN or plasmonic GaN regions. Based on our numerical findings, we show that by employing new material modifications to green EELs operating at around 540 nm it is possible to decrease their CW RT threshold current densities from over 11 kA/cm2 to less than 7 kA/cm2.

545 nm Room-Temperature Continuous-Wave Operation of BeZnCdSe Quantum-Well Green Laser Diodes with Low Threshold Current Density

2010 ◽  
Vol 3 (9) ◽  
pp. 091201 ◽  
Author(s):  
Jun-ichi Kasai ◽  
Ryouichi Akimoto ◽  
Haruhiko Kuwatsuka ◽  
Toshifumi Hasama ◽  
Hiroshi Ishikawa ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Green Laser ◽  
Threshold Current Density ◽  
Continuous Wave Operation ◽  
Low Threshold

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature

2021 ◽  
Vol 42 (11) ◽  
pp. 112801
Author(s):  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Ping Chen ◽  
Jing Yang ◽  
...  
Keyword(s):  
Laser Diode ◽  
Room Temperature ◽  
Continuous Wave ◽  
Chemical Vapor ◽  
Threshold Current ◽  
Stimulated Emission ◽  
Blue Laser ◽  
Organic Chemical ◽  
Blue Laser Diode ◽  
Continuous Wave Operation

Abstract In this work, we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode (LD), and its stimulated emission wavelength is around 442 nm. The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition (MOCVD), and the width and length of the ridge waveguide structure are 30 and 1200 μm, respectively. The threshold current is about 400 mA, and corresponding threshold current density is 1.1 kA/cm2.

scholarly journals Room Temperature CW Operation of GaN-based Blue Laser Diodes by GaInN/GaN optical guiding layers

2000 ◽  
Vol 5 (S1) ◽  
pp. 1-7 ◽  
Author(s):  
Masayoshi Koike ◽  
Shiro Yamasaki ◽  
Yuta Tezen ◽  
Seiji Nagai ◽  
Sho Iwayama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Crystal Defects ◽  
Blue Laser ◽  
Buffer Layers ◽  
Continuous Wave Laser ◽  
Cw Operation ◽  
First Time

GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

Characterization of a near-room-temperature, continuous-wave quantum cascade laser for long-term, unattended monitoring of nitric oxide in the atmosphere

2006 ◽  
Vol 31 (13) ◽  
pp. 2012 ◽  
Author(s):  
David D. Nelson ◽  
J. Barry McManus ◽  
Scott C. Herndon ◽  
Joanne H. Shorter ◽  
Mark S. Zahniser ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Quantum Cascade Laser ◽  
Room Temperature ◽  
Continuous Wave ◽  
Quantum Cascade

Ternary lead-chalcogenide room-temperature mid-wave infrared detectors grown by spray-deposition

MRS Advances ◽  
2018 ◽  
Vol 3 (5) ◽  
pp. 291-297 ◽  
Author(s):  
Hussain Abouelkhair ◽  
Pedro N. Figueiredo ◽  
Seth R. Calhoun ◽  
Chris J. Fredricksen ◽  
Isaiah O. Oladeji ◽  
...  
Keyword(s):  
Room Temperature ◽  
Heterogeneous Reaction ◽  
Spray Deposition ◽  
Complexing Agents ◽  
X Ray Diffraction ◽  
Lead Chalcogenide ◽  
Lead Chalcogenides ◽  
Diffraction Peaks ◽  
P Type

ABSTRACTTernary lead chalcogenides, such as PbSxSe1-x, offer the possibility of room-temperature infrared detection with engineered cut-off wavelengths within the important 3-5 micron mid-wave infrared (MWIR) wavelength range. We present growth and characterization of aqueous spray-deposited thin films of PbSSe. Complexing agents in the aqueous medium suppress unwanted homogeneous reactions so that growth occurs only by the heterogeneous reaction on the hydrophilic substrate. The strongly-adherent films are smooth with a mirror-like finish. The films comprise densely packed grains with tens of nm dimensions and a total film thickness of ∼400-500 nm. Measured optical constants reveal absorption out to at least 4.5 μm wavelength and a ∼0.3 eV bandgap intermediate between those of PbS and PbSe. The semiconducting films are p-type with resistivity ∼1 and 85 Ohm-cm at 300 and 80 K, respectively. Sharp x-ray diffraction peaks identify the films as Clausthalite-Galena solid-state solution with a lattice constant that indicates an even mixture of PbS and PbSe. The photoconductive response is observed at both nitrogen and room temperature up to at least 2 kHz chopping frequency.

scholarly journals Effect of Gate Dielectrics on the Performance of P-Type Cu2O TFTs Processed at Room Temperature

2013 ◽  
Vol 856 ◽  
pp. 215-219 ◽  
Author(s):  
H.A. Al-Jawhari ◽  
J.A. Caraveo-Frescsa
Keyword(s):  
Indium Tin Oxide ◽  
Room Temperature ◽  
Single Phase ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Operating Voltage ◽  
Dc Magnetron Sputtering ◽  
Post Annealing ◽  
Semiconducting Properties ◽  
P Type

Single-phase Cu2O films with p-type semiconducting properties were successfully deposited by reactive DC magnetron sputtering at room temperature followed by post annealing process at 200°C. Subsequently, such films were used to fabricate bottom gate p-channel Cu2O thin film transistors (TFTs). The effect of using high-κ SrTiO3 (STO) as a gate dielectric on the Cu2O TFT performance was investigated. The results were then compared to our baseline process which uses a 220 nm aluminum titanium oxide (ATO) dielectric deposited on a glass substrate coated with a 200 nm indium tin oxide (ITO) gate electrode. We found that with a 150 nm thick STO, the Cu2O TFTs exhibited a p-type behavior with a field-effect mobility of 0.54 cm2.V-1.s-1, an on/off ratio of around 44, threshold voltage equaling-0.62 V and a sub threshold swing of 1.64 V/dec. These values were obtained at a low operating voltage of-2V. The advantages of using STO as a gate dielectric relative to ATO are discussed.

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