Growth of Beta Silicon Carbide Film on Si by Hot-Filament CVD

1994 ◽  
Vol 339 ◽  
Author(s):  
Zhang Rong ◽  
Shi Hongtao ◽  
Yu Shidong ◽  
Zheng Youdou ◽  
He Yuliang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Single Crystal ◽  
Chemical Vapor ◽  
Wide Band ◽  
Structure Study ◽  
Wafer Surface ◽  
Silicon Carbide Film ◽  
Scattering Spectrum ◽  
Hot Filament ◽  
Cubic Silicon Carbide

ABSTRACTIn this paper, we will report fabrication and structure study of single crystal β-SiC film on Si substrate by hot-filament chemical vapor deposition (HFC VD). The reaction sources are hydrogen-diluted methane(CH4) and Silane(SiH4). The wafer surface temperature is about 650°C. The typical growth rate is 200nm/h. Raman scattering spectrum shows a peak centering at 960cm-1 with a full width at half magnitude (FWHM) of 75cm-1. At room temperature, the photoluminescence spectrum gives a wide band at 580nm (2.2eV) with a FWHM of 55nm. Fourier transmission infrared (FT-IR) spectrum exhibits an absorption peak at 12.6 μm XRD and XPS analysis indicate that the epilayer is a stoichiometrical single crystal cubic silicon carbide film.

Epitaxial growth of cubic silicon carbide on silicon using hot filament chemical vapor deposition

2017 ◽  
Vol 635 ◽  
pp. 48-52 ◽  
Author(s):  
Philip Hens ◽  
Ryan Brow ◽  
Hannah Robinson ◽  
Michael Cromar ◽  
Bart Van Zeghbroeck
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Filament ◽  
Cubic Silicon Carbide

Quick and Practical Cleaning Process for Silicon Carbide Epitaxial Reactor

2018 ◽  
Vol 924 ◽  
pp. 96-99
Author(s):  
Kohei Shioda ◽  
Keisuke Kurashima ◽  
Hitoshi Habuka ◽  
Hideki Ito ◽  
Shinichi Mitani ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Carbon Film ◽  
Film Surface ◽  
Chemical Vapor ◽  
Pyrolytic Carbon ◽  
Film Deposition ◽  
Carbon Surface ◽  
Cleaning Process ◽  
Silicon Carbide Film ◽  
Carbon Coated

In order to develop a quick and practical cleaning process for the silicon carbide chemical vapor deposition reactor, the pyrolytic carbon-coated susceptor was used. The 30-μm-thick silicon carbide film was formed on the susceptor; the film was cleaning by chlorine trifluoride gas at 460 °C for 15 min. The remained fluorine was removed by the annealing at 900 °C in ambient hydrogen. The pyrolytic carbon surface did not suffer from any damage, because the pyrolytic carbon film surface morphology after the cleaning process was the same as that before the silicon carbide film deposition.

Properties of Nanocrystalline 3C-SiC:H and SiC:Ge:H Films Deposited at Low Substrate Temperatures

2006 ◽  
Vol 910 ◽  
Author(s):  
Shinsuke Miyajima ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Germanium Alloy ◽  
Temperature Deposition ◽  
P Type ◽  
Cubic Silicon Carbide ◽  
Charged Defects ◽  
Substrate Temperatures

AbstractWe have investigated properties of nanocrystalline hydrogenated cubic silicon carbide (nc-3C-SiC:H) and silicon carbide: germanium alloy (nc-SiC:Ge:H) films deposited by hot-wire chemical vapor deposition (HWCVD) at low temperatures of about 300°C. we found that the density of charged defects was strongly influenced by grain size of the films. In-situ doping into nc-3C-SiC:H films was also carried out. N-type nc-3C-SiC:H films were successfully deposited by using phosphine (PH3) and hexamethyldisilazane (HMDS) as dopants. We found that HMDS is an effective n-type dopant for low temperature deposition of nc-3C-SiC:H films by HWCVD. For the deposition of p-type nc-3C-SiC:H with trimethylaluminum (TMA), it was found that the substrate temperature of above 300°C is required to activate the acceptors. We added dimethylgermane (DMG) into mixture of MMS and H2 to prepare nc-SiC:Ge:H films. The nc-SiC:Ge:H films with Ge mole fraction of 1.9% were successfully deposited.

Growth of Cubic Silicon Carbide on Silicon Using Hot Filament CVD

2017 ◽  
Vol 897 ◽  
pp. 91-94
Author(s):  
Philip Hens ◽  
Ryan Brow ◽  
Hannah Robinson ◽  
Michael Cromar ◽  
Bart van Zeghbroeck
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Degrees Of Freedom ◽  
Thick Layer ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Hot Filament ◽  
Cubic Silicon Carbide ◽  
First Time

In this paper, we report, for the first time, growth of high-quality single-crystalline 3C-SiC on silicon substrates using Hot Filament Chemical Vapor Deposition (HF-CVD). Rocking curve X-Ray diffraction (XRD) measurements revealed a full-width at half maximum (FWHM) as low as 333 arcsec for a 15 μm thick layer. Low tensile strain, below 0.1%, was measured using Raman spectroscopy. This quality was achieved with a carefully optimized process making use of the additional degrees of freedom the hot filaments create. For example, the hot filaments allow for precursor pre-cracking. Additionally, they allow a tuning of the vertical thermal gradient which creates an improved thermal field compared to classic Chemical Vapor Deposition techniques used for the deposition of this material today.

Investigation of Diamond Films Deposited on LaAlO 3 Single Crystal Substrates by Hot Filament Chemical Vapor Deposition

1998 ◽  
Vol 15 (2) ◽  
pp. 146-148 ◽  
Author(s):  
Nai-gui Shang ◽  
Rong-chuan Fang ◽  
Yin Hang ◽  
Jin-qiu Li ◽  
Si-jin Han ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Hot Filament
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