Growth of Epitaxial 2H-silicon Carbide by Pulsed Laser Deposition

1994 ◽  
Vol 339 ◽  
Author(s):  
Mark A. Stan ◽  
Martin O. Patton ◽  
Hemasiri K. M. Vithana ◽  
David L. Johnson ◽  
Joseph D. Warner ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Average Diameter ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Columnar Grains ◽  
20 Nm ◽  
Heater Plate

ABSTRACTSilicon carbide films have been grown on 6H-SiC (0001) and Si (001) wafers by laser ablation using an excimer laser. The films were deposited at heater plate temperatures between 970° C to 1270° C. Film composition, morphology and polytypism were determined by Auger electron spectroscopy, atomic force microscopy and high resolution transmission electron microscopy (TEM). In the course of these experiments growth of 2H-SiC on 6H-SiC was observed at the highest heater plate temperatures. Cross-sectional TEM images clearly show the symmetry of a film grown at 1270° C as c-axis oriented 2H-SiC containing columnar grains with average diameter of 20 nm and length of 100 nm.

scholarly journals First identification of nanoparticles on thorax, abdomen and wings of the worker bee Apis dorsata Fabricius

2016 ◽  
Vol 60 (1) ◽  
pp. 87-96
Author(s):  
Atanu Bhattacharyya ◽  
Shashidhar Viraktamath ◽  
Fani Hatjina ◽  
Santanu Bhattacharyya ◽  
Bhaktibhavana Rajankar ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Average Diameter ◽  
The Body ◽  
Apis Dorsata ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Calcium Phosphate Nanoparticles ◽  
First Time

Abstract The presence of nanoparticles on the body of the honeybee Apis dorsata Fabricius, was investigated for the first time to better understand the bee’s behaviour. These have been observed by using Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and confirmed by Atomic Force Microscopy (AFM). Our study clearly denotes that the Indian rock honey bee Apis dorsata possess calcium silicate and calcium phosphate nanoparticles on its body surface of 5-50 nm in diameter. In particular, the nanoparticles on the abdomen and thorax of A. dorsata have an average diameter of about 10 nanometers and they are smaller than those found on wings of the same bees which are about 20 nanometers. The nanoparticles found are different of the ones previously observed on honey bees or other insects. The origin and role of these natural nanoparticles on the body of the Indian rock bee need to be to be further investigated; more research in the subject might raise important aspects in relation to the conservation of these unique pollinators.

Cross-Sectional Nanoindentation of Alumina Thin Films Deposited by Pulsed Laser Deposition Process

2006 ◽  
Author(s):  
Sudheer Neralla ◽  
Sergey Yarmolenko ◽  
Dhananjay Kumar ◽  
Devdas Pai ◽  
Jag Sankar
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Hardness ◽  
Deposition Process ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Adhesion Properties ◽  
Force Microscopy ◽  
Atomic Force

Alumina is a widely used ceramic material due to its high hardness, wear resistance and dielectric properties. The study of phase transformation and its correlation to the mechanical properties of alumina is essential. In this study, interfacial adhesion properties of alumina thin films are studied using cross-sectional nanoindentation (CSN) technique. Alumina thin films are deposited at 200 and 700 °C, on Si (100) substrates with a weak Silica interface, using pulsed laser deposition (PLD) process. Effect of annealing on the surface morphology of the thin films is studied using atomic force microscopy. Xray diffraction studies revealed that alumina thin films are amorphous in nature at 200 °C and polycrystalline with predominant gamma alumina phase at 700 °C.

TEM Studies on the Microstructure of m-Face Grown 4H-SiC by Solution Growth

2020 ◽  
Vol 1004 ◽  
pp. 414-420
Author(s):  
Junro Takahashi ◽  
Kotaro Kawaguchi ◽  
Kazuhiko Kusunoki ◽  
Tomoyuki Ueyama ◽  
Kazuhito Kamei
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solution Growth ◽  
Spiral Growth ◽  
Growth Surface ◽  
Vicinal Surface ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

We have studied the microstructure of the growth surface of the 4H-SiC grown by the m-face solution growth. Atomic Force Microscopy (AFM) revealed the micro-striped morphology with the asperity of several nm in the band-like morphology region. The cross-sectional Transmission Electron Microscopy (XTEM) showed that the growth surface consisted of a bunch of nanofacets and vicinal surface. This peculiar morphology is totally different from that of conventional spiral growth on c-face, which can be closely related with the growth mechanism of the m-face solution growth.

Nanomechanical Properties and Nanostructure of CMG and CMP Machined Si Substrates

2008 ◽  
Vol 381-382 ◽  
pp. 525-528 ◽  
Author(s):  
B.L. Wang ◽  
Han Huang ◽  
Jin Zou ◽  
Li Bo Zhou
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Substrate Surface ◽  
Transmission Electron Microscopy Analysis ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
Electron Microscopy Analysis

Silicon (100) substrates machined by chemo-mechanical-grinding (CMG) and chemicalmechanical- polishing (CMP) were investigated using atomic force microscopy, cross-sectional transmission electron microscopy and nanoindentation. It was found that the substrate surface after CMG was slightly better than machined by CMP in terms of roughness. The transmission electron microscopy analysis showed that the CMG-generated subsurface was defect-free, but the CMP specimen had a crystalline layer of about 4 nm in thickness on the top of the silicon lattice as evidenced by the extra diffraction spots. Nanoindentation results indicated that there exists a slight difference in mechanical properties between the CMG and CMP machined substrates.

Mechanical Stress, Grain-boundary Relaxation, and Oxidation of Sputtered CuNi(Mn) Films

1999 ◽  
Vol 14 (4) ◽  
pp. 1286-1294 ◽  
Author(s):  
W. Brückner ◽  
W. Pitschke ◽  
S. Baunack ◽  
J. Thomas
Keyword(s):  
Grain Boundary ◽  
Microstructural Characterization ◽  
Excess Vacancy ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Boundary Relaxation ◽  
20 Nm ◽  
Atomic Rearrangement

This paper focuses on understanding stress development in CuNi42Mn1 thin films during annealing in Ar. In addition to stress-temperature measurements, resistance-temperature investigations and chemical and microstructural characterization by Auger electron spectroscopy, scanning and transmission electron microscopy, x-ray diffraction, and atomic force microscopy were also carried out. The films are polycrystalline with a grain size of 20 nm up to 450 °C. To explain the stress evolution above 120 °C, atomic rearrangement (excess-vacancy annihilation, grain-boundary relaxation, and shrinkage of grain-boundary voids) and oxidation were considered. Grain-boundary relaxation was found to be the dominating process up to 250–300 °C. A sharp transition from compressive to tensile stress between 300 and 380 °C is explained by the formation of a NiO surface layer due to reaction with the remaining oxygen in the Ar atmosphere. This oxidation is masking the inherent structural relaxation above 300 °C.

On the “Step Bunching” Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide

2011 ◽  
Vol 679-680 ◽  
pp. 358-361 ◽  
Author(s):  
Massimo Camarda ◽  
Andrea Severino ◽  
Patrick Fiorenza ◽  
Vito Raineri ◽  
S. Scalese ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Resolution ◽  
Cross Sectional ◽  
Hydrogen Etching ◽  
Step Bunching ◽  
Electron Microscopies ◽  
Atomic Force ◽  
Transmission Electron ◽  
Surface Morphologies ◽  
Scanning Electron

Using several types of surface analysis (Optical profilometers (OP), Atomic Force Microscopies (AFM), Scanning Electron Microscopies (SEM) and cross-sectional high-resolution Transmission Electron Microscopies (TEM)) we analyze the surface morphologies of misoriented 4H silicon carbide after pre-growth hydrogen etching and homo-epitaxial growths. We observed the characteristic self-ordering of nano-facets on any analyzed surface. This nano-faceting, which should not be confused with step bunching, can be considered as a close-to-equilibrium instability, for this reason can be hindered.

Interface structure and formation between gold and trimethylcyclohexane polycarbonate

1999 ◽  
Vol 14 (9) ◽  
pp. 3538-3543 ◽  
Author(s):  
C. v. Bechtolsheim ◽  
V. Zaporojtchenko ◽  
F. Faupel
Keyword(s):  
Photoelectron Spectroscopy ◽  
Elevated Temperatures ◽  
Cluster Formation ◽  
Systematic Investigation ◽  
Temperature Dependent ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Metal Diffusion ◽  
Atomic Force ◽  
Transmission Electron

This paper presents the results of a systematic investigation of structure and formation of the interface between gold and trimethylcyclohexane polycarbonate, particularly concerning interface evolvement during gold evaporation and the influence of evaporation rate, substrate temperature, and subsequent annealing. The means of investigation were cross-sectional transmission electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy. Extensive metal diffusion into the polymer and cluster formation near the interface were observed at deposition rates of the order of one monolayer per minute and below. The penetration depth is strongly temperature dependent. At high evaporation rates metal aggregation at the surface prevents cluster formation inside the polymer. No diffusion into the polymer was observed from metal films deposited at room temperature after extensive annealing at elevated temperatures.

Si1-xGex Critical Thickness for Surface Wave Generation During UHV-CVD Growth at 525°C

1995 ◽  
Vol 399 ◽  
Author(s):  
H. Lafontaine ◽  
D.C. Houghton ◽  
B. Bahierathan ◽  
D.D. Perovic ◽  
J.-M. Baribeau
Keyword(s):  
Electron Microscopy ◽  
Surface Waves ◽  
Critical Thickness ◽  
Critical Value ◽  
Misfit Dislocations ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Cvd Growth

ABSTRACTSeveral Si1-xGex/Si heterostructures were grown at 525°C using a commercially available UHV-CVD reactor. Layers with a germanium fraction ranging from 0.15 to 0.5 were examined by means of cross-sectional transmission electron microscopy and atomic force microscopy. Surface waves were found in layers with a thickness above a critical value which decreases rapidly as the Ge fraction is increased. Both experimental and modeling results show that surface waves are generated before misfit dislocations for Ge fractions above 0.3.

scholarly journals Indentation-Induced Mechanical Deformation Behaviors of AlN Thin Films Deposited onc-Plane Sapphire

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Sheng-Rui Jian ◽  
Jenh-Yih Juang
Keyword(s):  
Thin Films ◽  
Contact Stiffness ◽  
Maximum Load ◽  
Cross Sectional ◽  
Continuous Contact ◽  
Force Microscopy ◽  
Atomic Force ◽  
Slip Bands ◽  
Transmission Electron ◽  
Deformation Behaviors

The mechanical properties and deformation behaviors of AlN thin films deposited onc-plane sapphire substrates by helicon sputtering method were determined using the Berkovich nanoindentation and cross-sectional transmission electron microscopy (XTEM). The load-displacement curves show the “pop-ins” phenomena during nanoindentation loading, indicative of the formation of slip bands caused by the propagation of dislocations. No evidence of nanoindentation-induced phase transformation or cracking patterns was observed up to the maximum load of 80 mN, from either XTEM or atomic force microscopy (AFM) of the mechanically deformed regions. Instead, XTEM revealed that the primary deformation mechanism in AlN thin films is via propagation of dislocations on both basal and pyramidal planes. Furthermore, the hardness and Young’s modulus of AlN thin films estimated using the continuous contact stiffness measurements (CSMs) mode provided with the nanoindenter are 16.2 GPa and 243.5 GPa, respectively.

Cleaning Procedures for UHV Cluster-tool MOS Fabrication

1992 ◽  
Vol 259 ◽  
Author(s):  
C J Sofield ◽  
M P Murrell ◽  
S Sugden ◽  
M Heyns ◽  
S Verhaverbeke ◽  
...  
Keyword(s):  
Breakdown Strength ◽  
Electrical Performance ◽  
Ion Scattering ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Medium Energy Ion Scattering ◽  
Physical And Chemical ◽  
Cluster Tool

ABSTRACTWe have investigated the effect on a silicon surface of both wet chemical and cluster-tool UV/ozone cleaning, prior to UHV processing to fabricate MOS test structures. The physical and chemical condition of the Si surface has been examined by Scanning Tunnelling and Atomic Force Microscopy (STM, AFM) and Medium Energy Ion Scattering (MEIS). After MOS fabrication some of the structures were examined by Cross-sectional Transmission Electron Microscopy (TEM). The electrical performance of the MOS test sets were characterized by breakdown voltage measurements.We have found correlations between the electrical performance of the MOS devices, the structure of the Si surface prior to oxidation, and the details of the UHV fabrication technique. In particular any MOS device fabricated on a Si surface thermally cleaned in UHV prior to oxidation has a poor breakdown strength. We have found that this is the result of the formation of silicon carbide on the Si surface at high temperature and the subsequent local disruption of the oxidation step of MOS fabrication by the SiC. A UHV cleaning procedure has been developed to avoid this C contamination problem.

Sign in / Sign up

Export Citation Format

Share Document