Excimer Laser Planarization of Diamond Films

1994 ◽  
Vol 339 ◽  
Author(s):  
Dong-Gu Lee ◽  
S. D. Harkness ◽  
Rajiv K. Singh
Keyword(s):  
Energy Density ◽  
Excimer Laser ◽  
Arc Discharge ◽  
Incidence Angle ◽  
Etching Rate ◽  
Diamond Films ◽  
Threshold Energy ◽  
Diamond Surface ◽  
Threshold Energy Density ◽  
Laser Fluences

ABSTRACTThe planarization of rough polycrystalline diamond films synthesized by DC arc discharge plasma jet CVD was attempted using KrF excimer laser pulses. The effects of laser incidence angle and reaction gases (ozone and oxygen) on etching rate were studied. The temperature change of diamond and graphite with different laser fluences was calculated by computer simulation to explain the etching behavior of diamond films. The calculated threshold energy density for etching of pure crystalline diamond was about 1.7 J/cm2. However, the threshold energy density was affected by the angle of laser incidence. Preferential etching of a particular crystallographic plane was observed through scanning electron microscopy. The etching rate of diamond with ozone was lower than that with oxygen. Also, the etching rate of diamond films at normal laser incidence was lower than that of films tilted at 45° for laser fluences above 2.3 J/cm2. When the angle of incidence was 80° to the diamond surface normal, the peak-to-valley surface roughness was significantly reduced, from 30 μm to 0.5μm.

Femtosecond Pulsed Laser-Induced Micromachining of Difficult-to-Machine Materials: Diamond a Case Study

2000 ◽  
Author(s):  
A. P. Malshe ◽  
A. M. Ozkan ◽  
T. A. Railkar ◽  
K. P. Adhi ◽  
W. D. Brown ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Excimer Laser ◽  
Etching Rate ◽  
Polycrystalline Diamond ◽  
Single Pulse ◽  
Laser Wavelength ◽  
Diamond Surface ◽  
Single Shot ◽  
Micro Machining ◽  
3 Dimensional

Abstract Meso and micro scale machining is an important and emerging area of research. Various non-traditional and novel tools are being explored for meso and micro machining of non-silicon materials. In this paper, we report etching, micro machining and related phenomena of commercially available single and polycrystalline diamond using a femtosecond pulsed excimer laser (λ = 248 nm, tp ∼ 380 fs). Surface modifications due to single pulse and multiple pulse irradiation of diamond samples, at different energy densities, have been analyzed using Raman spectroscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM). Etching rate of single crystal type IIA diamond by femtosecond pulsed excimer laser is also studied. Raman spectroscopy study of the single shot irradiation of diamond with a femto second laser shows the formation of a non-diamond disordered (sp2 bonded) phase on the surface. However, subsequent micro machining of this non-diamond disordered surface, by delivering several shots from the femtosecond laser, results in the removal of the non-diamond disordered layer and the restoration of the diamond surface. It is experimentally shown that the periodicity of the 2-dimensional corrugations written on diamond surface is shorter than the laser wavelength used. 3-dimensional writing on diamond globules during laser etching is also discussed. Further, micro machining of diamond tips is shown to be precise, and without mechanical and chemical damages. Femto second laser is demonstrated as a next-generation tool for mechanical and chemical damage free precision micro machining of the hardest material, diamond.

Amorphous Gallium Produced By Pulsed Excimer Laser Irradiation

1985 ◽  
Vol 51 ◽  
Author(s):  
J. Fröhlingsdorf ◽  
B. Stritzker
Keyword(s):  
Transition Temperature ◽  
Energy Density ◽  
Excimer Laser ◽  
Low Temperatures ◽  
Threshold Energy ◽  
Residual Resistivity ◽  
Superconducting Transition ◽  
Β Phase ◽  
Excimer Laser Irradiation ◽  
Vapor Quenching

ABSTRACTPure crystalline Ga films (α-Ga, β-Ga) have been irradiated at low temperatures (≤ 20 K) with an Excimer laser. By measuring the superconducting transition temperature Tc and the residual resistivity ≤o, the resulting Ga phases (α-Ga, β-Ga, a-Ga) can be identified.Both crystalline Ga phases can be transformed into the amorphous phase.The threshold energy density for the β→ a transition depends on the film thickness, whereas the α →. a transition occurs always at about 225 mJ/cm2 This behavior is in agreement with earlier observations that a-Ga can grow on top of the in-phase but not on the β-phase.The results of laser quenching are compared with other non-equilibrium techniques for the production of a-Ga, such as vapor quenching and low temperature ion iradiation.

Excimer Laser Crystallization of Nanocrystalline Silicon Thin Films

2015 ◽  
Vol 1120-1121 ◽  
pp. 361-368
Author(s):  
Li Jie Deng ◽  
Wei He ◽  
Zheng Ping Li
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Excimer Laser ◽  
Silicon Film ◽  
Threshold Energy ◽  
Nanocrystalline Silicon ◽  
Lateral Growth ◽  
Laser Crystallization ◽  
Silicon Thin Films ◽  
Excimer Laser Crystallization

Nanocrystalline silicon (nc-Si) thin film on glass substrate is subjected to excimer laser crystallized by varying the laser energy density in the range of 50~600 mJ/cm2. The effect of excimer laser crystallization on the structure of silicon film is investigated using Raman spectroscopy, X-ray diffraction, atomic force microscopy and scanning electron microscopy. The results show that polycrystalline silicon thin films can be obtained by excimer laser crystallization of nc-Si films. A laser threshold energy density of 200 mJ/cm2 is estimated from the change of crystalline fraction and surface roughness of the treated films. The growth of grain is observed and the crystallization mechanism is discussed based on the super lateral growth model. The nanocrystalline silicon grains in the films act as seeds for lateral growth to large grains.

Threshold Energy Density for Pulsed Laser Annealing of Silicon

1980 ◽  
Vol 1 ◽  
Author(s):  
Dick Hoonhout ◽  
Frans Saris
Keyword(s):  
Energy Density ◽  
Layer Thickness ◽  
Laser Annealing ◽  
Threshold Energy ◽  
Amorphous Layer ◽  
Systematic Investigation ◽  
Laser Wavelength ◽  
Threshold Energy Density ◽  
Pulsed Laser Annealing ◽  
Disordered Layer

ABSTRACTWe have made a systematic investigation of the threshold energy density for recrystallization of ion-implanted silicon by Q-switched laser irradiation as function of thickness of the disordered layer, temperature during implantation, type and dose of implanted impurity, laser wavelength, and substrate orientation. Most results have been obtained with a Q-switched ruby laser. A linear dependence of the threshold on layer thickness (in the region of 60–300 nm) was found for arsneic-implanted silicon, but not for silicon-implanted silicon. For an amorphous layer thickness of 200 nm we found very little dependence of the threshold on type of dopant. In the case of the Nd:YAG laser, however, the lowest threshold was observed for column VI elements, the highest for column IV elements and intermediate and equal thresholds for the elements from column III and B. The influence of temperature during implantation was found to be small, but the threshold appeared to be different for (100)- and (111)- oriented substrates.

Structural and Electronic Properties of Laser Crystallized Silicon Films

1998 ◽  
Vol 536 ◽  
Author(s):  
T. Sameshima
Keyword(s):  
Energy Density ◽  
Hall Effect ◽  
Carrier Mobility ◽  
Laser Energy ◽  
Threshold Energy ◽  
Free Carrier ◽  
Silicon Films ◽  
Laser Energy Density ◽  
Threshold Energy Density ◽  
Hall Effect Measurements

AbstractFundamental properties of silicon films crystallized by a 30-ns-pulsed XeCI excimer laser were discussed. Although crystallization of 50-nm thick silicon films formed on quartz substrates occurred through laser hearing at the crystalline threshold energy density of 160 mJ/cm2, a higher laser energy density at 360 mJ/cm2 was necessary to crystallize silicon films completely. Analyses of free carrier optical absorption revealed that phosphorus-doped silicon films with a carrier density about 2×1020 cm−3 had a high carrier mobility of 20 cm2/Vs for irradiation at the crystallization threshold energy density, while Hall effect measurements gave a carrier mobility of electrical current traversing grain boundaries of 3 cm2/Vs. This suggested that the crystalline grains had good electrical properties. As the laser energy density increased to 360 mJ/cm2 and laser pulse number increased to 5, the carrier mobility obtained by the Hall effect measurements markedly increased to 28 cm2/Vs because of improvement of grain boundary properties, while the carrier mobility obtained by analysis of free carrier absorption increased to 40 cm2/Vs. A post annealing method at 190°C with high-pressure H2O vapor was developed to reduce the density of defect states. Increase of carrier mobility to 500 cm2/Vs was demonstrated in the polycrystalline silicon thin film transistors fabricated in laser crystallized silicon films.

Air oxidation of undoped and B-doped polycrystalline diamond films at high temperature

1996 ◽  
Vol 11 (2) ◽  
pp. 296-304 ◽  
Author(s):  
Koichi Miyata ◽  
Koji Kobashi
Keyword(s):  
High Temperature ◽  
Etching Rate ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Temperature Treatment ◽  
Diamond Surface ◽  
High Temperature Treatment ◽  
Air Oxidation ◽  
B Doping ◽  
Electron Energy Loss

Air oxidation of undoped and B-doped polycrystalline diamond films was investigated at temperatures between 500 and 700 °C. Diamond (111) facets were etched for both undoped and B-doped films after 1 h at 700 °C. The etching rate of (111) facet due to oxidation was approximately 50% lower by B-doping of 1 × 1019 cm−3, presumably because of the decrease of sp2 bands and lattice defects that were identified by Raman and photoluminescence spectroscopy. X-ray photoelectron and electron energy loss spectroscopy revealed that by the high temperature treatment, the diamond surface was initially converted into graphite and successively etched by oxygen.

scholarly journals Investigation of Threshold Carrier Densities in the Optically Pumped Amplified Spontaneous Emission of Formamidinium Lead Bromide Perovskite Using Different Excitation Wavelengths

Photonics ◽  
2021 ◽  
Vol 9 (1) ◽  
pp. 4
Author(s):  
Saif M. H. Qaid ◽  
Hamid M. Ghaithan ◽  
Khulod K. AlHarbi ◽  
Abrar F. Bin Ajaj ◽  
Bandar Ali Al-Asbahi ◽  
...  
Keyword(s):  
Energy Density ◽  
Spontaneous Emission ◽  
Threshold Energy ◽  
Amplified Spontaneous Emission ◽  
The Other ◽  
Excitation Wavelength ◽  
Optically Pumped ◽  
Threshold Energy Density ◽  
Other Hand ◽  
Lead Bromide

The high crystal quality of formamidium lead bromide perovskite (CH(NH2)2PbBr3 = FAPbBr3) was infiltrated in a mesoporous TiO2 network. Then, high-quality FAPbBr3 films were evaluated as active lasing media, and were irradiated with a picosecond pulsed laser to demonstrate amplified spontaneous emission (ASE), which is a better benchmark of its intrinsic suitability for gain applications. The behavior was investigated using two excitation wavelengths of 440 nm and 500 nm. Due to the wavelength-dependent absorbance spectrum and the presence of a surface adsorption layer that could be reduced using the shorter 440 nm wavelength, the ASE power dependence was strongly reliant on the excitation wavelength. The ASE state was achieved with a threshold energy density of ~200 µJ/cm2 under 440 nm excitation. Excitation at 500 nm, on the other hand, needed a higher threshold energy density of ~255 µJ/cm2. The ASE threshold carrier density, on the other hand, was expected to be ~4.5 × 1018 cm−3 for both excitations. A redshift of the ASE peak was detected as bandgap renormalization (BGR), and a BGR constant of ~5–7 × 10−9 eV cm was obtained.

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