Polyimides and Copolyimides with Low Dielectric Constant, Low Moisture Absorption, and Low Coefficient of Thermal Expansion for use as Interlayer Dielectrics

1994 ◽  
Vol 337 ◽  
Author(s):  
Brian C. Auman
Keyword(s):  
Dielectric Constant ◽  
Thermal Expansion ◽  
Moisture Absorption ◽  
Coefficient Of Thermal Expansion ◽  
The Other ◽  
Low Dielectric Constant ◽  
Absorption Properties ◽  
Interlayer Dielectric ◽  
Interlayer Dielectrics ◽  
Low Dielectric

ABSTRACTThe mechanical, thermal, electrical and moisture absorption properties of a series of fluorinated, highly rod-like polyimides and copolyimides are reported. Copolymerization with appropriate flexibilizing comonomers resulted in improved elongations versus those of the highly rod-like homopolymers while maintaining, to a large extent,the other desirable properties of the backbone. These materials are considered prime candidates for interlayer dielectric due to their excellent combination of properties.

scholarly journals Polyimide/mica hybrid films with low coefficient of thermal expansion and low dielectric constant

e-Polymers ◽  
2019 ◽  
Vol 19 (1) ◽  
pp. 181-189 ◽  
Author(s):  
Wei Zhao ◽  
Yong Xu ◽  
Chaoran Song ◽  
Jian Chen ◽  
Xiaohong Liu
Keyword(s):  
Dielectric Constant ◽  
Thermal Expansion ◽  
Coefficient Of Thermal Expansion ◽  
Low Dielectric Constant ◽  
Gravimetric Analysis ◽  
Condensation Polymerization ◽  
Hybrid Films ◽  
Low Dielectric ◽  
Infrared Spectrometer ◽  
Polyimide Matrix

AbstractPolyimide (PI)/mica hybrid films were successfully prepared by in situ condensation polymerization method, in which the mica particles were modified by coupling agent γ-aminopropyltriethoxy silane (APTS) to strengthen the interaction between the mica particles and PI matrix. The morphology, structure, thermal and mechanical properties as well as dielectric properties of PI films were systematically studied via Scanning electron microscope (SEM), Fourier transform infrared spectrometer (FT-IR spectrometer), Thermal gravimetric analysis (TGA), tensile experiments, Thermal mechanical analyzer (TMA), impedance analyzer, etc. The results indicated that the mica particles were dispersed homogeneously in PI matrix, leading to an improvement of the mechanical property, thermal stability and hydrophobicity. It was novel to notice that hybrid films exhibited low coefficient of thermal expansion (CTE) and low dielectric constant simultaneously. The CTE and dielectric constant of hybrid film dropped to 25.36 ppm/k and 2.42 respectively, in the presence of 10 wt% mica into polyimide matrix.

Deposition and Characterization of Low-Dielectric-Constant SiOC(-H) Thin Films for Interlayer Dielectrics in Multilevel Interconnections

2007 ◽  
Vol 50 (6) ◽  
pp. 1803 ◽  
Author(s):  
Rangaswamy Navamathavan ◽  
An Soo Jung ◽  
Hyun Seung Kim ◽  
Young Jun Jang ◽  
Chi Kyu Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Interlayer Dielectrics ◽  
Low Dielectric

Intrinsic low dielectric behaviour of a highly thermally stable Sr-based metal–organic framework for interlayer dielectric materials

2014 ◽  
Vol 2 (19) ◽  
pp. 3762-3768 ◽  
Author(s):  
Muhammad Usman ◽  
Cheng-Hua Lee ◽  
Dung-Shing Hung ◽  
Shang-Fan Lee ◽  
Chih-Chieh Wang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Metal Organic Framework ◽  
Dielectric Materials ◽  
Low Dielectric Constant ◽  
Water Molecules ◽  
Compound A ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
Metal Organic ◽  
Organic Framework

A Sr-based metal–organic framework exhibits an intrinsic low dielectric constant after removing the water molecules. A low dielectric constant and high thermal stability make this compound a candidate for use as a low-k material.

Polynorbornene for Low K Interconnection

1997 ◽  
Vol 476 ◽  
Author(s):  
N. R. Grove ◽  
P. A. Kohl ◽  
S. A. Bidstrup-Allen ◽  
R. A. Shick ◽  
B. L. Goodall ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Glass Transition ◽  
Transition Temperature ◽  
Glass Transition Temperature ◽  
Moisture Absorption ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
High Glass Transition Temperature ◽  
Low Dielectric ◽  
Microelectronics Industry

AbstractWithin the microelectronics industry, there is an ongoing trend toward miniaturization coupled with higher performance. The scaling of transitors toward smaller dimensions, higher speeds, and lower power has resulted in an urgent need for low dielectric constant interlevel insulators. Low dielectric constant interlevel dielectrics have already been identified as being critical to the realization of high performance integrated circuits in the SLA Roadmap. Thus, there exists a need in the microelectronics industry for a thermally stable, noncorrosive low dielectric constant polymer with good solvent resistance, high glass transition temperature, good mechanical performance and good adhesive properties, particularly to copper. In addition, the desired dielectric material should be capable of being processed in environmentally friendly solvents, and the final thermal and electrical performance should not be affected by manufacturing or post environmental conditions. High glass transition temperature polynorbornenes are being developed which provide many of these desired features. This polymer family is produced via a new transition metal catalyzed polymerization. Attributes which make polynorbornene particularly attractive in microelectronics include: (i) excellent thermal performance, (ii) adhesion to conductors without the use of adhesion promoters or barrier layers, (iii) very low moisture absorption (< 0.1 wt %), and (iv) low dielectric constant (2.2 – 2.6). Side groups which have been added to the polynorbornene backbone improve adhesion, dielectric properties and mechanical properties.

Siloxane Polymers as Low Dielectric Materials for Microelectronics

1995 ◽  
Vol 390 ◽  
Author(s):  
C. P. Wong
Keyword(s):  
Dielectric Constant ◽  
Three Dimensional ◽  
Signal Propagation ◽  
Dielectric Materials ◽  
Propagation Delay ◽  
Dimensional Structure ◽  
Low Dielectric Constant ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
High Dielectric

ABSTRACTA modem VLSI device is a complicated three-dimensional structure that consists of multilayer metallization conductor lines which are separated with interlayer-dielectrics as insulation. This VLSI technology drives the IC device into sub-micron feature size that operates at ultra-fast speed (in excess of > 100 MHz). Passivation and interlayer dielectric materials are critical to the device performance due to the conductor signal propagation delay of the high dielectric constant of the material. Low dielectric constant materials are the preferred choice of materials for this reasons. These materials, such as Teflon® and siloxanes (silicones), are desirable because of their low dielectric constant (∈1) = 2.0, 2.7, respectively. This paper describes the use of a low dielectric constant siloxane polymer (silicone) as IC devices passivation layer material, its chemistry, material processes and reliability testing.

Poly(Arylene Ethers) as Low Dielectric Constant Materials for ULSI Interconnect Applications

1996 ◽  
Vol 443 ◽  
Author(s):  
Raymond N. Vrtis ◽  
Kelly A. Heap ◽  
William F. Burgoyne ◽  
Lloyd M. Robeson
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Moisture Absorption ◽  
Dielectric Material ◽  
Mechanical Analysis ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Arylene Ether ◽  
Low Dielectric Constant Materials ◽  
Excellent Adhesion

AbstractPoly(arylene ethers)s are low dielectric constant organic spin on materials. PAE-2, which is a non-fluorinated poly(arylene ether), exhibits a dielectric constant below 3.0, thermal stability greater than 425 °C as well as excellent adhesion to Si, SiO2, and Al. These are the major atributes which makes it a very attractive candidate for integration as an interlevel or inter-metal dielectric material (ILD). Material properties including dielectric constant, thermal stability, moisture absorption, and mechanical analysis will be discussed.

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