In Situ Ellipsometric Monitoring of Low Temperature Growth of Poly-Si Films By RF Plasma CVD

1994 ◽  
Vol 336 ◽  
Author(s):  
T. Shirafuji ◽  
Y. Hayashi ◽  
K. Tachibana
Keyword(s):  
Film Growth ◽  
Etching Rate ◽  
Present Condition ◽  
Rf Discharge ◽  
Rf Plasma ◽  
Phase Reaction ◽  
Silicon Thin Film ◽  
Si Films ◽  
Polycrystalline Silicon Films

ABSTRACTIn situ ellipsometry has been applied for monitoring silicon-thin-film growth on a glass substrate in RF-discharge plasma of SiF4+SiH4 diluted with H2 (80%). Polycrystalline silicon films were obtained at substrate temperature of 300°C and RF power density of 500MW/cm2. Volumetric fraction of c-Si increased from 50 to 80% by increasing the SiF4/ (SiF4+SiH4) flow ratio from 0 to 0.5. The fraction of c-Si also increased to 63% by sequential repetition of deposition with SiH4/H2 and etching with SiF4. The etching rate of a-Si was less than that of c-Si. These results suggest that semi-preferential etching of a-Si enhances the increase of c-Si fraction. A gas-phase reaction simulation has suggested that the dominant deposition precursor is SiH3, and the etchant is F in the present condition.

Afm/Tem Investigation of Low Temperature Polycrystalline Silicon Grown by ECR-CVD

1995 ◽  
Vol 406 ◽  
Author(s):  
H. L. Hsiao ◽  
K. C. Wang ◽  
L. W. Cheng ◽  
A. B. Yang ◽  
T. R. Yew ◽  
...  
Keyword(s):  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Electron Cyclotron Resonance ◽  
Film Growth ◽  
Chemical Vapor ◽  
Plan View ◽  
3 Dimensional ◽  
High Resolution Tem ◽  
Si Films ◽  
Polycrystalline Silicon Films

AbstractThe polycrystalline silicon films were deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD) with hydrogen dilution at 250°C and without any thermal annealing. The surface morphology and the microstructure of the poly-Si films are investigated by atomic force microscopy (AFM), plan-view transmission electron microscopy (TEM), crosssectional TEM and high resolution TEM (HRTEM). The low temperature poly-Si films deposited by ECR-CVD show a special leaf-like grain shape (plan-view) and an upside-down cone shape (3-dimensional view). The grains in the poly-Si films have preferred orientation of <112> and the longer side of the leaf-like grain is direction and the shorter side is direction. Lattice bending and interruption are found in the films. The arrangement of the atoms on the grains are well ordered, while atoms in the interfacial regions are randomly distributed. A simple grain formation model based on growth rate differences between different planes and etching effect can explain the film growth mechanism and the formation of the special grain geometry.

Comparative Study on in-situ Ellipsometric Monitoring of III-Nitride Film Growth via Plasma-Enhanced Atomic Layer Deposition

2019 ◽  
Vol 28 (03n04) ◽  
pp. 1940020
Author(s):  
Adnan Mohammad ◽  
Deepa Shukla ◽  
Saidjafarzoda Ilhom ◽  
Brian Willis ◽  
Ali Kemal Okyay ◽  
...  
Keyword(s):  
Growth Rate ◽  
Real Time ◽  
Film Growth ◽  
Atomic Layer ◽  
Layer Growth ◽  
In Situ Monitoring ◽  
Rf Plasma ◽  
Nitride Film ◽  
The Impact

In this paper a comparative in-situ ellipsometric analysis is carried out on plasma-assisted ALD-grown III-nitride (AlN, GaN, and InN) films. The precursors used are TMA, TMG, and TMI for AlN, GaN, and InN respectively, while Ar is used as purge gas. For all of the films N2/H2/Ar plasma was used as the co-reactant. The work includes real-time in-situ monitored saturation curves, unit ALD cycle analysis, and >500 cycle film growth runs. In addition, the films are grown at different substrate temperatures to observe the impact of temperature not only on the growth rate but on how it influenced the precursor chemisorption, ligand removal, and nitrogen incorporation surface reactions. All three nitride films confirm fairly linear growth character. The growth rate per cycle (GPC) for each film is also measured with respect to rf-plasma power to obtain the surface saturation conditions during ALD growth. The real-time in-situ monitoring of the film growth can really be beneficial to understand the atomic layer growth and film formation in each individual ALD cycle.

Silicon Thin Film Deposition on Nano-Structured ZnO Substrates

2001 ◽  
Vol 664 ◽  
Author(s):  
R. Könenkamp ◽  
V. Chu ◽  
J. Conde ◽  
L. Dloczik
Keyword(s):  
Thin Film Deposition ◽  
Film Deposition ◽  
Rf Plasma ◽  
Zno Films ◽  
Hot Wire ◽  
Silicon Thin Film ◽  
Crystalline Films ◽  
Si Films ◽  
Plasma Deposited Films ◽  
Deposited Films

ABSTRACTAmorphous and micro-crystalline Si films have been deposited by the hot-wire technique on deeply structured columnar ZnO films. It is found that nearly perfect conformal deposition occurs for amorphous films, similar to what was previously found for rf-plasma deposited films. Micro-crystalline films deposited by the hot wire technique are less conformal since deposition occurs preferentially on protruding features of the substrate, while films deposited by rf-plasma CVD exhibit high conformality.

Photoconductive Polycrystalline Silicon Films on Glass Obtained by Hot-Wire CVD

1996 ◽  
Vol 420 ◽  
Author(s):  
A. R. Middya ◽  
J. Guillet ◽  
J. Perrin ◽  
J. E. Bouree
Keyword(s):  
Polycrystalline Silicon ◽  
Chemical Vapour ◽  
Columnar Structure ◽  
Silicon Films ◽  
High Deposition Rate ◽  
Hot Wire ◽  
Si Films ◽  
Polycrystalline Silicon Films ◽  
Deposited Films

AbstractTextured polycrystalline silicon films with columnar structure have been deposited on glass at low temperature (400–550°C) and high deposition rate (10 to 15 Å/s) by hot-wire chemical vapour deposition using SiH4-H2 gases. The homogeneity of the deposited layer is ± 5% on a 8 cm diameter. As deposited films have a poor photoconductivity. However hydrogen confinement in the films during the deposition or after the deposition is found to be the key for obtaining g.tc/poly-Si with a significant diffusion length. Eventually reasonable values of the mobility lifetime product (> 10−7 cm2/V) are obtained by in situ hydrogen passivation of poly-Si films after deposition. Efficient shifting of the Fermi level is achieved by in situ B or P doping. The incorporation of boron in poly-Si network strongly influences the morphology and the crystalline structure. Undoped films have a Hall mobility of 14 ± 5 cm2/V.s which decreases versus the carrier concentration.

Silicon Thin Film Growth by Pulsed Plasma CVD under Near-Atmospheric Pressure

2005 ◽  
Vol 891 ◽  
Author(s):  
Hirotatsu Kitabatake ◽  
Maki Suemitsu ◽  
Setsuo Nakajima ◽  
Tsuyoshi Uehara ◽  
Yasutake Toyoshima
Keyword(s):  
Atmospheric Pressure ◽  
Film Growth ◽  
Chemical Vapor ◽  
Pulsed Plasma ◽  
Silicon Thin Film ◽  
Cross Sectional ◽  
Raman Scattering Spectroscopy ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Si Films

ABSTRACTSi Plasma-enhanced chemical vapor deposition (PECVD) at a near-atmospheric pressure (NAP) of 500 Torr has been conducted by using a pulsed-electric-field based NAP-PECVD system. At a growth temperature of 180°C, poly-Si films with a high Raman ratio of 7.4 are obtained on glass substrates, while epitaxial-like growth occurs when Si(100) substrates are employed, as confirmed by Raman-scattering spectroscopy, X-ray diffraction, and a cross-sectional transmission-electron microscopy.

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

Modifications of a JEOL 2000EX TEM for insSitu surface studies

1993 ◽  
Vol 51 ◽  
pp. 640-641
Author(s):  
Michael T. Marshall ◽  
Xianghong Tong ◽  
J. Murray Gibson
Keyword(s):  
Electron Diffraction ◽  
Surface Science ◽  
Film Growth ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Transmission Electron ◽  
Fundamental Insight

We have modified a JEOL 2000EX Transmission Electron Microscope (TEM) to allow in-situ ultra-high vacuum (UHV) surface science experiments as well as transmission electron diffraction and imaging. Our goal is to support research in the areas of in-situ film growth, oxidation, and etching on semiconducter surfaces and, hence, gain fundamental insight of the structural components involved with these processes. The large volume chamber needed for such experiments limits the resolution to about 30 Å, primarily due to electron optics. Figure 1 shows the standard JEOL 2000EX TEM. The UHV chamber in figure 2 replaces the specimen area of the TEM, as shown in figure 3. The chamber is outfitted with Low Energy Electron Diffraction (LEED), Auger Electron Spectroscopy (AES), Residual Gas Analyzer (RGA), gas dosing, and evaporation sources. Reflection Electron Microscopy (REM) is also possible. This instrument is referred to as SHEBA (Surface High-energy Electron Beam Apparatus).The UHV chamber measures 800 mm in diameter and 400 mm in height. JEOL provided adapter flanges for the column.

scholarly journals Fe3O4@C Nanoparticles Synthesized by In Situ Solid-Phase Method for Removal of Methylene Blue

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 330
Author(s):  
Hengli Xiang ◽  
Genkuan Ren ◽  
Yanjun Zhong ◽  
Dehua Xu ◽  
Zhiye Zhang ◽  
...  
Keyword(s):  
Methylene Blue ◽  
Solid Phase ◽  
Raw Materials ◽  
Phase Method ◽  
Maximum Adsorption Capacity ◽  
High Catalytic Activity ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
High Concentrations

Fe3O4@C nanoparticles were prepared by an in situ, solid-phase reaction, without any precursor, using FeSO4, FeS2, and PVP K30 as raw materials. The nanoparticles were utilized to decolorize high concentrations methylene blue (MB). The results indicated that the maximum adsorption capacity of the Fe3O4@C nanoparticles was 18.52 mg/g, and that the adsorption process was exothermic. Additionally, by employing H2O2 as the initiator of a Fenton-like reaction, the removal efficiency of 100 mg/L MB reached ~99% with Fe3O4@C nanoparticles, while that of MB was only ~34% using pure Fe3O4 nanoparticles. The mechanism of H2O2 activated on the Fe3O4@C nanoparticles and the possible degradation pathways of MB are discussed. The Fe3O4@C nanoparticles retained high catalytic activity after five usage cycles. This work describes a facile method for producing Fe3O4@C nanoparticles with excellent catalytic reactivity, and therefore, represents a promising approach for the industrial production of Fe3O4@C nanoparticles for the treatment of high concentrations of dyes in wastewater.

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