Growth of (001)-Oriented Sbn Thin Films by Solid Source MOCVD

1993 ◽  
Vol 335 ◽  
Author(s):  
Z. Lu ◽  
R. S. Feigelson ◽  
R. K. Route ◽  
R. Hiskes ◽  
S. A. Dicarolis
Keyword(s):  
Thin Films ◽  
Cooling Rate ◽  
Single Phase ◽  
Refractive Indices ◽  
X Ray Diffraction ◽  
X Ray ◽  
Volume Fractions ◽  
Grain Orientations ◽  
Optical Waveguiding ◽  
Mocvd Technique

AbstractBy the solid source MOCVD technique, we have deposited 2000 – 3000 Å thick single phase SrxBa1−xNb2O6 (SBN) films on (100) MgO substrates using tetramethylheptanedionate (thd) sources. X-ray diffraction (XRD) 2θ scans indicated that these films were completely (001) oriented. XRD Φ scans, however, showed the films contained four in-plane grain orientations whose volume fractions could be controlled by altering the Sr/(Sr+Ba) and Nb/(Sr+Ba) ratios in the source powders. The in-plane volume fractions did not change with the deposition rate or the cooling rate. Films with composition Sr0 58Ba0.42Nb1.94O6 had mainly two in-plane orientations. Optical waveguiding behavior was demonstrated in these films. Refractive indices were found to be no= 2.20 and ne = 2.13, as compared to no = 2.31 and ne = 2.27 for bulk SBN60.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

Tailoring of Multiferroic Properties of BiFeO3 Thin Films by Cation Substitution

2010 ◽  
Vol 442 ◽  
pp. 102-108 ◽  
Author(s):  
M.S. Awan ◽  
A.S. Bhatti ◽  
S. Qing ◽  
C.K. Ong
Keyword(s):  
Thin Films ◽  
Single Phase ◽  
Bottom Electrode ◽  
X Ray Diffraction ◽  
Free Surfaces ◽  
X Ray ◽  
Atomic Force ◽  
Magnetization Saturation ◽  
Multiferroic Bifeo3 ◽  
Mn Doped

Mn-doped multiferroic BiFeO3 (BFMO) thin films were deposited on LaNiO3(LNO)/SrTiO3(STO)/Si(100) substrates by pulsed laser deposition (PLD) technique. X-ray diffraction (XRD) showed that films were bicrystalline single phase with (110) preferential orientation. Multiferroic top layer and oxide bottom electrode (LNO) epitaxially followed the buffer layer (STO). Oxygen partial pressure during deposition proved to be critical for phase formation, crystallinity and resistivity of the films. Atomic force microscopic (AFM) studies revealed the smooth, dense and crack free surfaces of the films. Cross-section view of the multilayers by field emission scanning electron microscope (FE-SEM) gave their thickness. Mn substitution resulted in the increase of magnetization saturation, coercive field and clarity of hysteresis loop. The magneto-electric (ME) effect was demonstrated by measuring the dielectric response in a varying magnetic field. Optimally deposited BFMO films show saturated P-E loop.

The location and effects of Si in (Ti1–xSix)Ny thin films

2009 ◽  
Vol 24 (8) ◽  
pp. 2483-2498 ◽  
Author(s):  
Axel Flink ◽  
Manfred Beckers ◽  
Jacob Sjölén ◽  
Tommy Larsson ◽  
Slawomir Braun ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Boundaries ◽  
Photoelectron Spectroscopy ◽  
Single Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Arc Evaporation ◽  
Annealing Experiments ◽  
Tissue Phase

(Ti1–xSix)Ny (0 ≤ x ≤ 0.20; 0.99 ≤ y(x) ≤ 1.13) thin films deposited by arc evaporation have been investigated by analytical transmission electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and nanoindentation. Films with x ≤ 0.09 are single-phase cubic (Ti,Si)N solid solutions with a dense columnar microstructure. Films with x > 0.09 have a featherlike microstructure consisting of cubic TiN:Si nanocrystallite bundles separated by metastable SiNz with coherent-to-semicoherent interfaces and a dislocation density of as much as 1014 cm−2 is present. The films exhibit retained composition and hardness between 31 and 42 GPa in annealing experiments to 1000 °C due to segregation of SiNz to the grain boundaries. During annealing at 1100–1200 °C, this tissue phase thickens and transforms to amorphous SiNz. At the same time, Si and N diffuse out of the films via the grain boundaries and TiN recrystallize.

Structural, Magnetic and Magneto-tranport Properties of Reactive-sputtered Fe3O4 Thin Films

2010 ◽  
Vol 1250 ◽  
Author(s):  
Xinghua Wang ◽  
Sarjoosing Goolaup ◽  
Peng Ren ◽  
Wen Siang Lew
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Single Phase ◽  
Native Oxide ◽  
X Ray Diffraction ◽  
Verwey Transition ◽  
Electrical Measurements ◽  
Metal Insulator ◽  
X Ray ◽  
Sample Measurement

AbstractThin films of magnetite (Fe3O4) are grown on a single-crystal Si/SiO2 (100) substrate with native oxide using DC reactive sputtering technique at room tempreture (RT) and 300C. The x-ray diffraction(XRD) result shows the thermal energy during deposition enhances the crystallization of the Fe3O4 and x-ray photoelectron spectroscopy confirms the film deposited at 300C is single-phase Fe3O4 while the film deposited at RT is mostly ν-Fe2O3. The electrical measurements show that the resistivity of the Fe3O4 film increases exponentially with decreasing temperature, and exhibit a sharp metal-insulator transition at around 100 K, indicating the Verwey transition feature. The saturation magnetization Ms of Fe3O4 film measured by vibrating sample measurement (VSM) at RT was found to be 445 emu/cm3.

Ferroelectric Thin Films of Bismuth Titanate Prepared by Mocvd

1991 ◽  
Vol 243 ◽  
Author(s):  
H. Wang ◽  
L. W. Fu ◽  
S. X. Shang ◽  
S. Q. Yu ◽  
X. L. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Bismuth Titanate ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Dispersion Analysis ◽  
Ferroelectric Thin Films ◽  
Tetrabutyl Titanate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Mocvd Technique

AbstractThe ferroelectric thin films of bismuth titanate (Bi4Ti3O12) have been prepared by metalorganic chemical vapor deposition ( MOCVD) technique at atmosphere. The triphenyl bismuth (Bi(CaH5 ) 3)and tetrabutyl titanate (C16H36O4Ti) were used as precursors. Dense Bi4Ti3 O12 films with smooth shinning surface have been grown on Si( 100) substrates at 550°C whithout postannealing. The as- grown films were characterized by X-ray diffraction analysis (XRD), scanning electron microscopy (SEM) and energy dispersion analysis ( EDAX). The films showed well-ordered crystallinity with an (001)preffered orientation. The influence of growth parameters on deposition rate, composition and morphology of as-grown films was also discussed.

Fabrication of High-Quality CuInSe2 Films by Coating, Compaction and Selenization

2012 ◽  
Vol 625 ◽  
pp. 287-290
Author(s):  
Jin Gang Xu ◽  
Yan Lai Wang ◽  
Hong Bo Nie
Keyword(s):  
Thin Films ◽  
Smooth Surface ◽  
Single Phase ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
New Phase ◽  
Cuinse2 Film ◽  
Selenization Process ◽  
Selenization Temperature

CuInSe2 thin films were successfully prepared by selenization of precursor films coated on the Mo foils. The precursor films were compacted to improve surface morphology and density of CuInSe2 thin films. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS). The results indicate that the single-phase CuInSe2 is formed at 210 °C in selenization process and it exhibits preferred orientation along the (112) plane. The selenization temperature is above 210 °C, the selenization temperature rises to promote the crystallinity of selenized films, not to induce the occurrence of a new phase. The compact CuInSe2 film with smooth surface can be obtained by selenization of precursor films pressed with the pressure of 300 MPa.

Growth and Characterization of (012)- and (001)-Oriented Epitaxial Anatase Thin Films

2006 ◽  
Vol 46 ◽  
pp. 146-151
Author(s):  
Andriy Lotnyk ◽  
Stephan Senz ◽  
Dietrich Hesse
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Single Phase ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Transmission Electron

Single phase TiO2 thin films of anatase structure have been prepared by reactive electron beam evaporation. Epitaxial (012)- and (001)-oriented anatase films were successfully obtained on (110)- and (100)-oriented SrTiO3 substrates, respectively. X-ray diffraction and cross section transmission electron microscopy investigations revealed a good epitaxial quality of the anatase films grown on the SrTiO3 substrates.

Reduced-pressure MOCVD of highly crystalline BaTiO3 thin films

1992 ◽  
Vol 7 (3) ◽  
pp. 542-545 ◽  
Author(s):  
Peter C. Van Buskirk ◽  
Robin Gardiner ◽  
Peter S. Kirlin ◽  
Steven Nutt
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Total Pressure ◽  
Single Phase ◽  
X Ray Diffraction ◽  
Reduced Pressure ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Diffraction Patterns ◽  
First Time

Epitaxial BaTi3 films have been grown on NdGaO3 [100] substrates by reduced pressure MOCVD for the first time. The substrate temperature was 1000 °C and the total pressure was 4 Torr. Electron and x-ray diffraction measurements indicate highly textured, single phase films on the NdGaO3 substrate which are predominantly [100], with [110] also present. TEM and selected area electron diffraction (SAED) indicate two specific orientational relationships between the [110] and the [001] diffraction patterns.

Morphology and Microstructure of Tungsten Films by Magnetron Sputtering

2018 ◽  
Vol 913 ◽  
pp. 416-423 ◽  
Author(s):  
Jian Gang Yu ◽  
Wen Jia Han ◽  
Zhong Chao Sun ◽  
Kai Gui Zhu
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Magnetron Sputtering ◽  
Processing Parameters ◽  
X Ray Diffraction ◽  
Total Stress ◽  
X Ray ◽  
Grain Orientations ◽  
Morphology Of Films ◽  
Scanning Electron

In this work, tungsten thin films were deposited on different substrates by magnetron sputtering and some of the films were then annealed at 1000°C for 1 hour in order to investigate the influence of different processing parameters on morphology and microstructure of films. Scanning electron microscope and x-ray diffraction were used to detect the morphology and microstructure of films. Under the same conditions, the thin films on different substrates showed different preferred grain orientations although the morphologies were similar. After thermal treatment, the morphology of films changed significantly and the total stress parallel to film surfaces dropped off sharply.

scholarly journals Структура и сегнетоэлектрические свойства гетероэпитаксиальных тонких пленок NaNbO-=SUB=-3-=/SUB=-, полученных методом RF-катодного распыления

2020 ◽  
Vol 46 (2) ◽  
pp. 15
Author(s):  
А.В. Павленко ◽  
Д.В. Стрюков ◽  
Н.В. Тер-Оганесян
Keyword(s):  
Thin Films ◽  
Diffraction Analysis ◽  
Single Phase ◽  
Oxygen Atmosphere ◽  
Cell Deformation ◽  
X Ray Diffraction ◽  
Cathode Sputtering ◽  
Ferroelectric State ◽  
X Ray ◽  
First Time

For the first time, thin films of NaNbO3 on a MgO(001) substrate, on which a SrRuO3 layer was previously deposited, were obtained by RF cathode sputtering in an oxygen atmosphere. According to x-ray diffraction analysis the films are single phase and single-crystalline. The lattice parameters in the tetragonal approximation for the NaNbO3 and SrRuO3 layers were: с(NaNbO3) = 0.3940(1) nm, a(NaNbO3) = 0.389(1) nm; с(SrRuO3) = 0.4004(1) nm, a(SrRuO3) = 0.392(3) nm. The unit cell deformation for NaNbO3 was ε33 = 0.007, ε11 = 0.002. Dielectric and piezoelectric measurements indicate that the films are in a ferroelectric state.

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