Plasma Enhanced Metal-Organic Chemical Vapor Deposition of Germanium Nitride Thin Films

1993 ◽  
Vol 335 ◽  
Author(s):  
David M. Hoffman ◽  
Sri Prakash Rangarajan ◽  
Satish D. Athavale ◽  
Demetre J. Economou ◽  
Jia-Rui Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Growth Rates ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Transmission Spectra ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Substrate Temperatures

AbstractAmorphous germanium nitride thin films are prepared by plasma enhanced chemical vapor deposition from tetrakis(dimethylamido)germanium, Ge(NMe2)4, and an ammonia plasma at substrate temperatures as low as 190°C with growth rates >250 Å/min. N/Ge ratios in the films are 1.3 and the hydrogen contents are 13 atom %. The hydrogen is present primarily as N-H. The refractive indexes are close to the bulk value of 2.1, and the band gap, estimated from transmission spectra, is 4.8 eV.

Growth, microstructure, and resistivity of RuO2 thin films grown by metal-organic chemical vapor deposition

1998 ◽  
Vol 13 (8) ◽  
pp. 2281-2290 ◽  
Author(s):  
J. Vetrone ◽  
C. M. Foster ◽  
G-R. Bai ◽  
A. Wang ◽  
J. Patel ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Growth Rates ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Moderate Growth ◽  
Average Grain Size ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Polycrystalline RuO2 thin films were grown by metal-organic chemical vapor deposition (MOCVD) on both SiO2/Si(001) and Pt/Ti/SiO2/Si(001) substrates. Films having a controllable and reproducible structural texture and phase purity were synthesized by carefully controlling deposition parameters. Moderate growth temperatures (∼350 °C) and low growth rates (<30 Å/min) produced highly (110)-textured RuO2 films. Highly (101)-textured RuO2 films were favored at slightly lower temperatures (∼300 °C) and much higher growth rates (>30 Å/min). The most conductive RuO3 films had resistivities of 34 to 40 µΩ−cm at 25 °C, an average grain size of 65 ± 15 nm, and a surface roughness (rms) of 3 to 10 nm. Both single-phase Ru and mixed Ru/RuO2 phase material were also fabricated at low temperatures (<350 °C) by using lower oxygen flow concentrations (<10%).

Transparent conducting indium oxide thin films grown by low-temperature metal organic chemical vapor deposition

2007 ◽  
Vol 515 (5) ◽  
pp. 2921-2925 ◽  
Author(s):  
Chunyu Wang ◽  
Volker Cimalla ◽  
Genady Cherkashinin ◽  
Henry Romanus ◽  
Majdeddin Ali ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Indium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Transparent Conducting ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Study on ZrO2:Er Thin Films Fabricated by Metal-Organic Chemical Vapor Deposition

2003 ◽  
Vol 42 (Part 1, No. 5A) ◽  
pp. 2839-2842 ◽  
Author(s):  
Jeong Hoon Park ◽  
Kug Sun Hong ◽  
Woon Jo Cho ◽  
Jang-Hoon Chung
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Metal-organic chemical vapor deposition of ZrO2 films using Zr(thd)4 as precursors

1994 ◽  
Vol 9 (7) ◽  
pp. 1721-1727 ◽  
Author(s):  
Jie Si ◽  
Seshu B. Desu ◽  
Ching-Yi Tsai
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Organic Chemical ◽  
Deposition Rates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Deposited Films

Synthesis of zirconium tetramethylheptanedione [Zr(thd)4] was optimized. Purity of Zr(thd)4 was confirmed by melting point determination, carbon, and hydrogen elemental analysis and proton nuclear magnetic resonance spectrometer (NMR). By using Zr(thd)4, excellent quality ZrO2 thin films were successfully deposited on single-crystal silicon wafers by metal-organic chemical vapor deposition (MOCVD) at reduced pressures. For substrate temperatures below 530 °C, the film deposition rates were very small (⋚1 nm/min). The film deposition rates were significantly affected by (i) source temperature, (ii) substrate temperature, and (iii) total pressure. As-deposited films are carbon free. Furthermore, only the tetragonal ZrO2 phase was identified in as-deposited films. The tetragonal phase transformed progressively into the monoclinic phase as the films were subjected to a high-temperature post-deposition annealing. The optical properties of the ZrO2 thin films as a function of wavelength, in the range of 200 nm to 2000 nm, were also reported. In addition, a simplified theoretical model which considers only a surface reaction was used to analyze the deposition of ZrO2 films. The model predicated the deposition rates well for various conditions in the hot wall reactor.

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