Electrical Characterization of Laser/Energy-Beam Recrystallized Thin Film Silicon-On-Insulator (SOI)

1984 ◽  
Vol 33 ◽  
Author(s):  
El-Hang Lee ◽  
D. J. Ruprecht
Keyword(s):  
Thin Film ◽  
Epitaxial Growth ◽  
Electrical Transport ◽  
Structural Variation ◽  
Laser Energy ◽  
Electrical Characterization ◽  
Silicon On Insulator ◽  
Electrical Transport Properties ◽  
Energy Beam

ABSTRACTSpreading resistance has been measured for various types of grain boundaries formed on graphite heater recrystallized SOI samples (G-SOI) or laser strip beam-recrystallized SOI samples (L-SOI) in order to identify the characteristic relation between the morphological/structural variation of the boundary defects and their electrical transport properties. In general, the resistance values across L-SOI sub-boundaries are higher than those across G-SOI sub-boundaries. TEM analyses reveal evidences of higher degree of crystallographic mismatch (up to 10°) in L-SOI sub-boundaries than that (1 – 2°) in G-SOI sub-boundaries. The measurement also revealed the evidences of counter-doping near the seed areas where the epitaxial growth initiated.

Study of structural and electrical transport properties of CaRuO3 bulk and thin film

2020 ◽  
Author(s):  
Roshan Kumar Patel ◽  
Shobha Gondh ◽  
Harish Kumar ◽  
Shuchi Shyam Chitrakar ◽  
A. K. Pramanik
Keyword(s):  
Thin Film ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electrical Transport Properties

Electrical characterization of Cu-doped CdS p-type thin film transistors

2021 ◽  
Author(s):  
D. Berman-Mendoza ◽  
O. I. Diaz-Grijalva ◽  
R. López-Delgado ◽  
A. Ramos-Carrazco ◽  
M. E. Alvarez-Ramos ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electrical Characterization ◽  
P Type

Electrical transport properties in nitrogen-doped p-type ZnO thin film

2006 ◽  
Vol 21 (12) ◽  
pp. 1522-1526 ◽  
Author(s):  
Z Y Xiao ◽  
Y C Liu ◽  
B H Li ◽  
J Y Zhang ◽  
D X Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Transport Properties ◽  
Electrical Transport ◽  
Zno Thin Film ◽  
Electrical Transport Properties ◽  
Nitrogen Doped ◽  
P Type

scholarly journals Resistive switching in diamondoid thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
A. Jantayod ◽  
D. Doonyapisut ◽  
T. Eknapakul ◽  
M. F. Smith ◽  
W. Meevasana
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transport Properties ◽  
Resistive Switching ◽  
Electrical Transport ◽  
Hysteresis Curve ◽  
Applied Potential ◽  
Electrical Transport Properties ◽  
Non Volatile Memory ◽  
Memory Applications

Abstract The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through $$I(0)=0$$ I ( 0 ) = 0 linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.

Observation of Long Transients in the Electrical Characterization of Thin Film BST Capacitors

2003 ◽  
Vol 53 (1) ◽  
pp. 503-511 ◽  
Author(s):  
N. K. Pervez ◽  
P. J. Hansen ◽  
T. R. Taylor ◽  
J. S. Speck ◽  
R. A. York
Keyword(s):  
Thin Film ◽  
Electrical Characterization
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