Tem Characterization of GaAs Pin Diodes at Low Temperatures on Si Substrates

1993 ◽  
Vol 326 ◽  
Author(s):  
G. Aragon ◽  
S.I. Molina ◽  
L. Gonzalez ◽  
Y. Gonzalez ◽  
J.V. Anguita ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Pin Diodes ◽  
Si Substrates ◽  
Tem Characterization

scholarly journals TEM Characterization of Epitaxial MnSi Films Grown on (111) Si Substrates

2010 ◽  
Vol 16 (S2) ◽  
pp. 1228-1229
Author(s):  
MD Robertson ◽  
EA Karhu ◽  
TL Monchesky
Keyword(s):  
Si Substrates ◽  
Tem Characterization

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

TEM characterization of proton-exchanged LiNbO3 optical waveguides

1986 ◽  
Vol 44 ◽  
pp. 480-481
Author(s):  
W. E. Lee
Keyword(s):  
Refractive Index ◽  
Benzoic Acid ◽  
Optical Waveguides ◽  
Total Internal Reflection ◽  
Index Of Refraction ◽  
Optical Measurements ◽  
Lithium Ions ◽  
Wide Channel ◽  
Tem Characterization

An optical waveguide consists of a several-micron wide channel with a slightly different index of refraction than the host substrate; light can be trapped in the channel by total internal reflection.Optical waveguides can be formed from single-crystal LiNbO3 using the proton exhange technique. In this technique, polished specimens are masked with polycrystal1ine chromium in such a way as to leave 3-13 μm wide channels. These are held in benzoic acid at 249°C for 5 minutes allowing protons to exchange for lithium ions within the channels causing an increase in the refractive index of the channel and creating the waveguide. Unfortunately, optical measurements often reveal a loss in waveguiding ability up to several weeks after exchange.

TEM characterization of WSix films

1994 ◽  
Vol 52 ◽  
pp. 848-849
Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vapor Deposition ◽  
High Purity ◽  
Physical Vapor Deposition ◽  
Thermal Treatments ◽  
Rapid Thermal Anneal ◽  
Tungsten Silicide ◽  
Tem Characterization ◽  
Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

TEM Characterization of Pseudotetragonal Mullite

2001 ◽  
Vol 7 (S2) ◽  
pp. 426-427
Author(s):  
Bradley R. Johnson ◽  
Waltraud M. Kriven
Keyword(s):  
Phase Diagram ◽  
Spatial Relationship ◽  
Equilibrium Structure ◽  
Lattice Parameters ◽  
Orthorhombic Structure ◽  
Containerless Processing ◽  
Rich Phase ◽  
Tem Characterization ◽  
Solution Field

Mullite (3Al2O3•2SiO2) exists in a solid solution field (∼57-63 mol% Al2O3) as the only stable compound in the Al2O3•SiO2 phase diagram at ambient pressures. Equilibrium 3:2 mullite has an orthorhombic structure with b>a (o-mullite). However, when initially crystallized from molecularly mixed, 3:2 precursors at temperatures < 1200°C, the first phase that forms has lattice parameters with a ≈b. This structure is often termed pseudotetragonal mullite (pt-mullite), since even when the ‘a’ and ‘b’ lattice parameters are identical, they are symmetrically independent. Pseudotetragonal mullite has been shown to contain approx. 70 mol% Al2O3. with increasing time and temperature, the structure gradually assimilates the residual SiO2, and the lattice parameters change, such that by 1400°C, the material has attained its equilibrium structure and composition.TEM was used to determine the spatial relationship between the crystalline phase and the residual, amorphous, SiO2-rich phase in pt-mullite. The starting materials were quenched, 3:2 mullite beads and fibers (made by containerless processing).

scholarly journals TEM Characterization of Self-Assembled Magnetic Nanowires

2002 ◽  
Vol 8 (S02) ◽  
pp. 1368-1369
Author(s):  
X. Zhao ◽  
Y. Liu ◽  
M. Zheng ◽  
Z. Hao ◽  
S. Bandyopadhay ◽  
...  
Keyword(s):  
Magnetic Nanowires ◽  
Tem Characterization ◽  
Self Assembled

Characterization of a thermoelectric generator at low temperatures

2012 ◽  
Vol 62 ◽  
pp. 47-50 ◽  
Author(s):  
Sevan Karabetoglu ◽  
Altug Sisman ◽  
Z. Fatih Ozturk ◽  
Turker Sahin
Keyword(s):  
Low Temperatures ◽  
Thermoelectric Generator
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