Heteroepitaxial Growth of Cubic Gan on GaAs(100) by Reactive Nitrogen Source

1993 ◽  
Vol 326 ◽  
Author(s):  
Z.Q. He ◽  
X.M. Ding ◽  
X.Y. Hou ◽  
Xun Wang
Keyword(s):  
Nitrogen Source ◽  
Reactive Nitrogen ◽  
Heteroepitaxial Growth ◽  
Cubic Gan

Morphology of ultra-thin cubic GaN layers on GaAs(1 0 0) grown by MOVPE with DMHy as nitrogen source

2004 ◽  
Vol 222 (1-4) ◽  
pp. 286-292 ◽  
Author(s):  
J. Sormunen ◽  
J. Toivonen ◽  
M. Sopanen ◽  
H. Lipsanen
Keyword(s):  
Nitrogen Source ◽  
Cubic Gan

Reactive nitrogen source based on ECR discharge sustained by 24 GHz radiation

2015 ◽  
Vol 54 (4) ◽  
pp. 040302 ◽  
Author(s):  
Alexander Vodopyanov ◽  
Dmitry Mansfeld
Keyword(s):  
Nitrogen Source ◽  
Reactive Nitrogen ◽  
24 Ghz

Effect of Very Thin SiC Layer on Heteroepitaxial Growth of Cubic GaN on Si (001)

1998 ◽  
Vol 37 (Part 2, No. 6A) ◽  
pp. L630-L632 ◽  
Author(s):  
Yuichi Hiroyama ◽  
Masao Tamura
Keyword(s):  
Heteroepitaxial Growth ◽  
Cubic Gan ◽  
Gan On Si

Heteroepitaxial growth of cubic GaN on Si(001) coated with thin flat SiC by plasma-assisted molecular-beam epitaxy

2000 ◽  
Vol 76 (13) ◽  
pp. 1683-1685 ◽  
Author(s):  
D. Wang ◽  
Y. Hiroyama ◽  
M. Tamura ◽  
M. Ichikawa ◽  
S. Yoshida
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heteroepitaxial Growth ◽  
Cubic Gan ◽  
Gan On Si

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

1989 ◽  
Vol 47 ◽  
pp. 592-593
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Band ◽  
Deposition Process ◽  
Heteroepitaxial Growth ◽  
Electron Microscopic ◽  
Wide Band Gap ◽  
Lattice Matching ◽  
Different Types ◽  
Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

Heteroepitaxy of Cubic GaN

1997 ◽  
Vol 7 (12) ◽  
pp. 2309-2316 ◽  
Author(s):  
A. Trampert ◽  
O. Brandt ◽  
H. Yang ◽  
K. H. Ploog
Keyword(s):  
Cubic Gan
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