Observation of the Stark Effect in GaAs/AlGaAs Coupled Quantum Wells by Electroluminescence and Circularly Polarized Photoluminescence Excitation

1993 ◽  
Vol 326 ◽  
Author(s):  
Y. Kato ◽  
Y. Takahashi ◽  
S. Fukatsu ◽  
Y. Shiraki ◽  
R. Ito
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Photoluminescence Excitation ◽  
Coupled Quantum Wells ◽  
Circularly Polarized

Type I–type II anticrossing and enhanced Stark effect in asymmetric coupled quantum wells

1988 ◽  
Vol 53 (26) ◽  
pp. 2584-2586 ◽  
Author(s):  
J. E. Golub ◽  
P. F. Liao ◽  
D. J. Eilenberger ◽  
J. P. Harbison ◽  
L. T. Florez ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Type I ◽  
Type Ii ◽  
Coupled Quantum Wells

Quantum Confinement Stark Effect of Different Gainnas Quantum Well Structures

2013 ◽  
Vol 773 ◽  
pp. 622-627
Author(s):  
Ying Ning Qiu ◽  
Wei Sheng Lu ◽  
Stephane Calvez
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Quantum Wells ◽  
External Electric Field ◽  
Quantum Confinement ◽  
Stark Effect ◽  
Band Gap Energy ◽  
Electron Effective Mass ◽  
Coupled Quantum Wells ◽  
Quantum Well Structures

The quantum confinement Stark effect of three types of GaInNAs quantum wells, namely single square quantum well, stepped quantum wells and coupled quantum wells, is investigated using the band anti-crossing model. The comparison between experimental observation and modeling result validate the modeling process. The effects of the external electric field and localized N states on the quantized energy shifts of these three structures are compared and analyzed. The external electric field applied to the QW not only changes the potential profile but also modulates the localized N states, which causes band gap energy shifts and increase of electron effective mass.

Quantum-Confined Stark Effect in II-VI Semiconductor Coupled Quantum Wells

1989 ◽  
Vol 161 ◽  
Author(s):  
Z. Yang ◽  
J. F. Schetzina
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Heavy Hole ◽  
Zero Field ◽  
Coupled Quantum Wells ◽  
Quantum Confined Stark Effect ◽  
Device Applications ◽  
Quantum Confined ◽  
The Difference ◽  
Spectrum Region

ABSTRACTThe Quantum-Confined Stark Effect in II-VI semiconductor coupled quantum wells is studied theoretically. It is found that because of the difference in localization of the wavefunctions of the heavy hole and the electron subbands involved, large band gap shifts can be induced by an external electric field for quantum wells with zero-field band gaps in the spectrum region from 0.4 µm to 12 µm. Several potential device applications based on this effect are proposed.

Quantum-confined magneto-Stark effect in diluted magnetic semiconductor coupled quantum wells

2002 ◽  
Vol 80 (10) ◽  
pp. 1788-1790 ◽  
Author(s):  
Kai Chang ◽  
J. B. Xia ◽  
H. B. Wu ◽  
S. L. Feng ◽  
F. M. Peeters
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Coupled Quantum Wells ◽  
Quantum Confined ◽  
Diluted Magnetic

Stark effect in AlxGa1−xAs/GaAs coupled quantum wells

1987 ◽  
Vol 50 (21) ◽  
pp. 1518-1520 ◽  
Author(s):  
H. Q. Le ◽  
J. J. Zayhowski ◽  
W. D. Goodhue
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Coupled Quantum Wells
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