Simulation of Dry Etching Processes for III-V Compounds Technology Applications

1993 ◽  
Vol 324 ◽  
Author(s):  
K. Ketata ◽  
S. Koumetz ◽  
M. Ketata ◽  
R. Debrie
Keyword(s):  
Computer Simulation ◽  
Etch Rate ◽  
Plasma Reactor ◽  
Reactive Ion Etching ◽  
Dry Etching ◽  
Simulation Technique ◽  
Simulation Program ◽  
Ion Etching ◽  
Technology Applications ◽  
Computer Simulation Program

AbstractThis work introduces a new dry etching simulation technique of the sputtering component of Reactive Ion Etching (R.I.E.) and presents experimental verifications for GaAs. The final objective is to correlate the etch rate to the plasma reactor parameters, which can be incorporated into a computer-simulation program.

Dry Etching of Sol-Gel Pzt

1998 ◽  
Vol 546 ◽  
Author(s):  
R. Zeto ◽  
B. Rod ◽  
M. Dubey ◽  
M. Ervin ◽  
J. Conrad ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
Etch Rate ◽  
Sol Gel ◽  
Reactive Ion Etching ◽  
Dry Etching ◽  
Ion Milling ◽  
Ion Etching ◽  
Wide Range ◽  
Etch Rates ◽  
Argon Ion

AbstractTwo techniques for dry etching of sol-gel lead zirconate titanate (PZT 52/48) thin films were investigated: reactive ion etching and argon ion milling. Etched profiles were characterized by scanning electron microscopy. For reactive ion etching, a parallel plate etcher was used with HC2ClF4, an environmentally safe etch gas, in a process described by other researchers. Etch rates were measured and compared as a function of electrode shield material (ardel, graphite, alumina) and RF input power (100 to 500 W). These etch rates varied from 10 to 100 nm/min. Reactive ion etched sidewall angles 12° off normal were consistently produced over a wide range of RF powers and etch times, but overetching was required to produce a clean sidewall. For argon ion milling, a 300 mA/500 V beam 40° off normal to the substrate operating in a 72 mPa argon pressure was used. These ion milling conditions produced an etch rate of 250 nm/min with a sidewall slope angle of about 70°. The ion milling etch rate for sol-gel PZT was significantly faster than rates reported for bulk PZT. The 500 nm thick PZT films used in this study were prepared by the sol-gel process that used methoxyethanol solvent, spin coating on t/Ti/SiO2 silicon substrates, and rapid thermal annealing for 30 s at 650 °C for crystallization of the perovskite phase.

Modeling of multi-electrolyte transport in charged ceramic and organic nanofilters using the computer simulation program NanoFlux

Desalination ◽  
2002 ◽  
Vol 147 (1-3) ◽  
pp. 231-236 ◽  
Author(s):  
J. Palmeri ◽  
J. Sandeaux ◽  
R. Sandeaux ◽  
X. Lefebvre ◽  
P. David ◽  
...  
Keyword(s):  
Computer Simulation ◽  
Electrolyte Transport ◽  
Simulation Program ◽  
Computer Simulation Program

Effect of Cutter Performance on Finished Tooth Form in Gear Shaving

1992 ◽  
Author(s):  
I. Moriwaki ◽  
M. Fujita
Keyword(s):  
Computer Simulation ◽  
Mean Value ◽  
Cutting Performance ◽  
Simulation Program ◽  
Tooth Surface ◽  
Depth Of Cut ◽  
Small Depth ◽  
Computer Simulation Program ◽  
Tooth Form ◽  
Cutting Model

Abstract The authors have been developed a computer simulation program of gear shaving. In the present paper, a new cutting model of shaving process is proposed so as to incorporate an effect of a cutting performance of shaving cutter into the simulation program. In this cutting model, it is assumed that a tooth flank material of work gear can be removed only when a depth of cut of a cutting edge exceeds a certain criterion. It is also assumed that the criterion have no definite value but has the nominal distribution over the tooth surface. The mean value of the distribution can define a characteristic of cutting performance of shaving cutter. The small mean value means that even small depth of cut can cause a stock removal; i.e. a good cutter performance. The computer simulations on gear shaving are performed to reveal the effect of the cutter performance on shaved tooth form. Under the conditions used in these simulations, the pressure angle error on the shaved tooth profile becomes remarkable as the cutter performance becomes worse. Thus, the developed computer simulation program of gear shaving has a reliability on the prediction of shaved tooth form. It will be useful for design of shaving cutter, judgement of tool life, and so on.

Reactive Ion Etching of GaSb, (Ai,Ga)Sb, and InAs for Novel Device Applications.

1990 ◽  
Vol 216 ◽  
Author(s):  
D.C. La Tulipe ◽  
D.J. Frank ◽  
H. Munekata
Keyword(s):  
Etch Rate ◽  
Reactive Ion Etching ◽  
Scanning Electron Micrographs ◽  
Electrical Characteristics ◽  
Ion Etching ◽  
Novel Device ◽  
Physical Sputtering ◽  
Chlorine Gas ◽  
Device Applications ◽  
Scanning Electron

ABSTRACT-Although a variety of novel device proposals for GaSb/(Al,Ga)Sb/InAs heterostructures have been made, relatively little is known about processing these materials. We have studied the reactive ion etching characteristics of GaSb, (AI,Ga)Sb, and InAs in both methane/ hydrogen and chlorine gas chemistries. At conditions similar to those reported elsewhere for RIE of InP and GaAs in CH4/H2, the etch rate of (AI,Ga)Sb was found to be near zero, while GaSb and InAs etched at 200Å/minute. Under conditions where the etch mechanism is primarily physical sputtering, the three compounds etch at similar rates. Etching in Cl2 was found to yield anisotropic profiles, with the etch rate of (AI,Ga)Sb increasing with Al mole fraction, while InAs remains unetched. Damage to an InAs “stop layer” was investigated by sheet resistance and mobility measurements. These etching techniques were used to fabricate a novel InAs-channel FET composed of these materials. Several scanning electron micrographs of etching results are shown along with preliminary electrical characteristics.

The Use of Computer Simulation of Merged Variation to Predict Rework Levels on Ship's Hull Blocks

1988 ◽  
Vol 4 (03) ◽  
pp. 155-168
Author(s):  
R.L. Storch ◽  
P.J. Giesy
Keyword(s):  
Computer Simulation ◽  
Probability Distribution ◽  
Subsequent Development ◽  
Simulation Method ◽  
Simulation Program ◽  
Modular Construction ◽  
Accuracy Control ◽  
Probability Curve ◽  
Productivity Losses ◽  
Computer Simulation Program

In the modular construction of ships, significant productivity losses can occur during the erection stage, when the modules, or hull blocks, are joined together. Frequently, adjacent blocks do not fit together properly, and rework of one or both of the mating block interfaces is necessary to correct the problem. The specific cause of rework is the variation of plate edges at the block interface, which is itself a cumulative product of numerous manufacturing variations inherent in hull block construction. Variation in manufacturing is unavoidable, but not uncontrollable. The application of accuracy control techniques in shipbuilding has proven that a statistical analysis of variation makes possible an accurate prediction of its effects. This paper presents an examination of block interface variation, and the subsequent development of a computer simulation method of predicting rework levels on those blocks. The complex interaction of all the edges' random variations at the block interface gives rise to a unique rework probability distribution. This probability distribution is evaluated by means of the computer simulation program, which provides estimates of the average rework anticipated, the shape of the probability curve, and other parameters. Similar predictions are also available for cost and labor of required rework. In addition to predicting rework levels, the simulation program can be a useful tool for reducing those levels.

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