Fluence Dependence of Excimer Laser Ablation of Ain

1993 ◽  
Vol 323 ◽  
Author(s):  
Janet K. Lumpp ◽  
Christopher N. Coretsopoulos ◽  
Susan D. Allen
Keyword(s):  
Shock Waves ◽  
Aluminum Nitride ◽  
Excimer Laser ◽  
Rapid Heating ◽  
Emission Spectra ◽  
Sample Surface ◽  
Ablation Rate ◽  
Beam Deflection ◽  
Metallic Surface ◽  
Surface Emission

AbstractAluminum nitride has been ablated with a KrF excimer laser (248 nm) at fluences from 1 to 60 J/cm2. Ablation depth, emission spectra and photothermal beam deflection were detected as a function of fluence. An ablation rate of 0.2 μm/pulse was achieved above 30 J/cm2 in vacuum. Ablation rate decreased with decreasing, fluence. Irradiated surfaces have a conductive metallic layer of reduced aluminum nitride. At low fluences, the metallic surface layer was spotty within the area of the laser beam. Below the fluence threshold for producing the metallized surface, emission spectra and photothermal beam deflection were still detected. Emission lines from Al, Al+ and Al-N were observed. Photothermal deflection data was used to calculate supersonic velocities for shock waves propagating from the sample surface. Shock waves resulted from rapid heating near the surface and expansion of ablated material from the laser spot.

Excimer laser ablation of aluminum nitride

1997 ◽  
Vol 12 (1) ◽  
pp. 218-225 ◽  
Author(s):  
Janet K. Lumpp ◽  
Susan D. Allen
Keyword(s):  
Aluminum Nitride ◽  
Excimer Laser ◽  
Ablation Threshold ◽  
Statistical Design ◽  
Ablation Rate ◽  
Data Sets ◽  
Statistical Design Of Experiments ◽  
Excimer Laser Ablation ◽  
High Fluences ◽  
Processing Variables

Excimer laser wavelengths ablate aluminum nitride at rates up to 0.2 μm/pulse where the rate increases with decreasing background pressure and increasing fluence. The ablation threshold for AlN at 248 nm is approximately 2 J/cm2. Blind vias are produced with flat bottoms, straight walls, and a decomposed metallic layer remaining on the surface. Ablation rate dependence on fluence saturates at high fluences due to absorption by the ablation plume. The influence of processing variables on ablation rate and ablation mechanisms are discussed. Statistical design of experiments is used to compare data sets.

Surface Modification of Aluminum Nitride and of Aluminum by Excimer Laser

1992 ◽  
Vol 285 ◽  
Author(s):  
A.J. Pedraza ◽  
J.-Y. Zhang ◽  
H. Esrom
Keyword(s):  
Aluminum Nitride ◽  
Excimer Laser ◽  
Substrate Surface ◽  
Ablation Rate ◽  
Laser Wavelength ◽  
Mechanism Of Decomposition ◽  
Self Consistent ◽  
A New Technique ◽  
193 Nm ◽  
Evaporation Kinetics

ABSTRACTA new technique for selective metallization of aluminum nitride (AIN) has been previously reported (1). It involves the use of an excimer laser to activate the AIN surface followed by electroless plating (Cu,Ni,Au) of the irradiated areas. The mechanism of decomposition of ALN is accompanied by ablation and the formation of an Al film on the substrate surface. Ablation rates are reported here as a function of fluence and number of pulses for three different wavelengths λ = 193 nm (ArF), λ = 248 (KrF) and λ = 351 nm (XeF).The effect of laser wavelength on the ablation rate is discussed. The ablation rates for Al were zlso measured and are compared with the AIN ablation rates. A numerical thermal model is used to analyze the mechanisms of laser ablation of both materials. The evaporation kinetics are incorporated into the model. The Clausius-Clapeyron approximation is used to make a self-consistent calculation of boiling and decomposition temperatures.

Excimer laser treatment of aluminum nitride

1993 ◽  
Author(s):  
Athena Tsetsekou ◽  
Th. Zampetakis ◽  
C. J. Stournaras ◽  
A. Patentalaki ◽  
Elias I. Hontzopoulos
Keyword(s):  
Aluminum Nitride ◽  
Laser Treatment ◽  
Excimer Laser

Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining

1999 ◽  
Vol 595 ◽  
Author(s):  
Qiang Zhao ◽  
Michael Lukitsch ◽  
Jie Xu ◽  
Gregory Auner ◽  
Ratna Niak ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Ablation Rate ◽  
Laser Micromachining ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor ◽  
Excimer Laser Ablation ◽  
Sapphire Substrates ◽  
Aspect Ratios ◽  
Device Structures

AbstractExcimer laser ablation rates of Si (111) and AlN films grown on Si (111) and r-plane sapphire substrates were determined. Linear dependence of ablation rate of Si (111) substrate, sapphire and AlN thin films were observed. Excimer laser micromachining of the AlN thin films on silicon (111) and SiC substrates were micromachined to fabricate a waveguide structure and a pixilated structure. This technique resulted in clean precise machining of AlN with high aspect ratios and straight walls.

Simulation of Discharge Shock Waves in Excimer Laser

2020 ◽  
Vol 47 (9) ◽  
pp. 0901001
Author(s):  
刘斌 Liu Bin ◽  
丁金滨 Ding Jinbin ◽  
周翊 Zhou Yi ◽  
江锐 Jiang Rui ◽  
王宇 Wang Yu
Keyword(s):  
Shock Waves ◽  
Excimer Laser

Excimer laser ablation of aluminum: influence of spot size on ablation rate

Laser Physics ◽  
2016 ◽  
Vol 26 (11) ◽  
pp. 116102 ◽  
Author(s):  
M E Shaheen ◽  
J E Gagnon ◽  
B J Fryer
Keyword(s):  
Laser Ablation ◽  
Excimer Laser ◽  
Ablation Rate ◽  
Spot Size ◽  
Excimer Laser Ablation

Valence Band Spectroscopy in the Ultrasoft X-Ray Region (50 to 100 A)

1975 ◽  
Vol 19 ◽  
pp. 627-641 ◽  
Author(s):  
Burton L. Henke ◽  
Kazuo Taniguchi
Keyword(s):  
Measurement Method ◽  
Emission Spectra ◽  
Sample Surface ◽  
Electron Excitation ◽  
Low Energy ◽  
High Dispersion ◽  
Simple Method ◽  
X Ray ◽  
Molecular Layers ◽  
Illustrative Application

Transitions from the valence electron levels into the first relatively sharp inner sub-shell levels result in characteristic x-ray emissions in the 100-200 eV region. These spectra sensitively reflect the chemical state of the atoms which are representative of the submicron thickness of the sample surface under low energy x-ray excitation and of the first few molecular layers of the sample under electron excitation.An optimized measurement method for this 50-100 A spectral region is “based upon single crystal spectrometry using a lead stearate analyzer which has high dispersion and efficiency and an energy width of about one eV in this wavelength range. Spectra are recorded using “tuned” proportional counter detection. In the work reported here, low energy x-ray excitation is used in order to minimize the possibility of radiation damage of the sample.Each spectrum is calibrated for both energy and instrument transmission using known, sharp M lines of elements such as molybdenum, zirconium and yttrium which will bracket the spectraj. range under measurement. A simple method has been developed for "stripping" from the measured spectra the Lorentzian crystal width and the Gaussian collimation width in order to allow an estimation to be made of the actual emission line widths as well as the relative intensities.In this report, as an illustrative application example, S-LII, III spectra are presented for a series of sulfur compounds in "both solid, and gas states. Manne's approximate molecular orbital interpretation of the x-ray emission spectra has been adopted and extended to apply to the LII, III spectra for second row elements.

Limitations of a high average power excimer laser by acoustic or shock waves

1990 ◽  
Author(s):  
M. Bessafi ◽  
P. Canarelli ◽  
B. L. Fontaine ◽  
B. M. Forestier ◽  
Ph. C. Delaporte ◽  
...  
Keyword(s):  
Shock Waves ◽  
Excimer Laser ◽  
Average Power ◽  
High Average Power
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