Trends in Solute Segregation Behavior During Silicon Solidification

1993 ◽  
Vol 321 ◽  
Author(s):  
Riccardo Reitanot ◽  
Patrick M. Smith ◽  
Michael J. Aziz
Keyword(s):  
Crystal Growth ◽  
Inverse Correlation ◽  
High Growth ◽  
Orientation Dependence ◽  
Solute Trapping ◽  
Group Iii ◽  
Explosive Crystallization ◽  
Crystallization Speed ◽  
Crystal Growth Kinetics ◽  
Interface Structures

ABSTRACTAt the high growth rates accessible during pulsed-laser induced melting and solidification and explosive crystallization, crystal growth kinetics are dominated not by equilibrium thermodynamics, but by the atomistic mechanisms by which crystallization proceeds. These Mechanisms can be probed by testing the predictions of solute trapping models based on various crystal/Melt interface structures against Measurements. We have measured the dependence of solute trapping of several group III, IV, and V elements in silicon on both interface orientation and crystallization speed. The Aperiodic Stepwise Growth Model of Goldman and Aziz accurately fits both the velocity and orientation dependence of the solute trapping observed in these systems. The success of the model implies a ledge structure for the crystal/Melt interface and a step-flow mechanism for crystal growth. In addition, we have observed an empirical inverse correlation between the two free parameters (“diffusive speeds”) in this model and the equilibrium solute partition coefficient of a system. This correlation may be used to estimate values of the diffusive speeds for other systems in which solute trapping has not been or cannot be Measured.

Freezing in Silicon at Large Undercooling

1989 ◽  
Vol 157 ◽  
Author(s):  
P.A. Stolk ◽  
A. Polman ◽  
W.C. Sinke
Keyword(s):  
Interface Temperature ◽  
Limiting Factor ◽  
Time Resolved ◽  
Large Undercooling ◽  
Explosive Crystallization ◽  
Crystallization Speed ◽  
Solid Liquid Interface ◽  
Solid Liquid ◽  
Rate Limiting

ABSTRACTPulsed laser irradiation is used to induce epitaxial explosive crystallization of amorphous silicon layers buried in a (100) oriented crystalline matrix. This process is mediated by a self-propagating liquid layer. Time-resolved determination of the crystallization speed combined with numerical calculation of the interface temperature shows that freezing in silicon saturates at 16 m/s for large undercooling (> 130 K). A comparison between data and different models for melting and freezing indicates that the crystallization behavior at large undercooling can be described correctly if the rate-limiting factor is assumed to be diffusion in liquid Si at the solid/liquid interface.

scholarly journals Solute trapping of group III, IV, and V elements in silicon by an aperiodic stepwise growth mechanism

1994 ◽  
Vol 76 (3) ◽  
pp. 1518-1529 ◽  
Author(s):  
Riccardo Reitano ◽  
Patrick M. Smith ◽  
Michael J. Aziz
Keyword(s):  
Growth Mechanism ◽  
Solute Trapping ◽  
Group Iii

scholarly journals Simultaneous determination of nucleation and crystal growth kinetics of struvite using a thermodynamic modeling approach

2013 ◽  
Vol 215-216 ◽  
pp. 903-912 ◽  
Author(s):  
Mary Hanhoun ◽  
Ludovic Montastruc ◽  
Catherine Azzaro-Pantel ◽  
Béatrice Biscans ◽  
Michèle Frèche ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Simultaneous Determination ◽  
Thermodynamic Modeling ◽  
Growth Kinetics ◽  
Modeling Approach ◽  
Crystal Growth Kinetics ◽  
Kinetics Of

Growth Kinetics and Thermal Stress in AlN Bulk Crystal Growth

2002 ◽  
Author(s):  
Bei Wu ◽  
Ronghui Ma ◽  
Hui Zhang ◽  
Michael Dudley ◽  
Raoul Schlesser ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Crystal Growth ◽  
Temperature Distribution ◽  
Stress Level ◽  
Grown Crystal ◽  
Power Level ◽  
Chemical Species ◽  
Group Iii Nitrides ◽  
Minor Effect ◽  
Group Iii

Group III nitrides, such as GaN, AlN and InGaN, have attracted a lot of attention due to the development of blue-green and ultraviolet light emitting diodes (LEDs) and lasers. In this paper, an integrated model has developed based on the conservation of momentum, mass, chemical species and energy together with necessary boundary conditions that account for heterogeneous chemical reactions both at the source and seed surfaces. The simulation results have been compared with temperature measurements for different power levels and flow rates in a reactor specially designed for nitride crystal growth at NCSU. It is evident that the heat power level affects the entire temperature distribution greatly while the flow rate has minor effect on the temperature distribution. The results also show that the overall thermal stress level is higher than the critical resolved shear stress, which means thermal elastic stress can be a major source of dislocation density in the as-grown crystal. The stress level is strongly dependent on the temperature gradient in the as-grown crystal. Results are correlated well with defects showing in an X-ray topograph for the AlN wafer.

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