Electrical and Optical Properties of Co Alloyed β-FeSi2 Formed by Ion Beam Synthesis
ABSTRACTBy subsequent implantation of iron and cobalt into silicon buried layers of semiconductinβ-(Fe1−xCox)Si2 are formed. The band gap energy as well as the spreading resistance decrease with increasing cobalt content. The microstructure of the sulicide layers is characterized by XTFM images.
2011 ◽
Vol 364
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pp. 228-231
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Effect of Doping Concentration on the Optical Properties of Indium-Doped Gallium Arsenide Thin FILMS
2016 ◽
Vol 40
(2)
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pp. 179-186
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Keyword(s):
Band Gap
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2005 ◽
Vol 88
(5)
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pp. 1186-1189
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