Nucleation of Dislocations in SIGe Layers
Keyword(s):
X Ray
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AbstractWe present an x-ray diffraction study of the variation of the tilt angle between a relaxed Si1−xGex epitaxial layer and the Si (001) substrate. Such measurements provide the basis for a new method to determine the nucleation activation energy of misfit dislocations. We show that the nucleation activation energy for 60° dislocations in the case of the multiplication mechanism observed in graded SiGe layers grown by UHV-CVD at low temperature is 4 eV.
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1984 ◽
Vol 40
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pp. 946-949
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pp. 100-103
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pp. 37-40
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pp. 7736-7739
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pp. 022118
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