Preparation of Amorphous Ti-Ni Films and Study on the Electrocatalytic Properties

1993 ◽  
Vol 318 ◽  
Author(s):  
Hu Weikang ◽  
Zhang Yunshi ◽  
Song Deying ◽  
Zhou Zuoxiang
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Electrocatalytic Properties ◽  
Steady State Method ◽  
Ni Alloy ◽  
Before And After ◽  
Beam Sputtering ◽  
Chemical States ◽  
Current Densities ◽  
Surface Microstructures

ABSTRACTThe film electrodes of amorphous Tio.ssNi1.00 and Ti1.59Ni1.00 were prepared by means of ion beam sputtering method using TiNi and Ti3Ni alloy targets, respectively The surface microstructures and chemical states of elements of the two films before and after HF treatment were examined by SEM and XPS. The electrocatalytic properties for hydrogen evolution reaction were measured by the galvanost&tic steady-state method in 1M NaOH at 40°C. The results showed that the surface microstructures and compositions of the treated films obviously changed as compared with the untreated films. The electrocatalytic activities of the both films before treatment were lower, but the electrocatalytic activities and exchange current densities significantly increased after treatment.

TiOxCy Thin Film Deposition by CO2+-Ion Beam Sputtering of Titanium

1993 ◽  
Vol 316 ◽  
Author(s):  
BERTILO E. KEMPF
Keyword(s):  
Near Infrared ◽  
Ion Beam ◽  
Thin Film Deposition ◽  
Ion Source ◽  
Film Deposition ◽  
Refractive Indices ◽  
Ion Beam Sputtering ◽  
Infrared Wavelength ◽  
Beam Sputtering ◽  
Current Densities

ABSTRACTTitanium metal is sputtered by ion beams using a Kaufman-type ion source with carbondioxide as working gas. Deposition takes place on watercooled substrates of silicon and InP. The films obtained are amorphous; they adhere excellently. SEM-pictures reveal a featureless dense fracture and a smooth surface. Despite a carbon content of 9 at % the films are highly transparent in the visible and near infrared wavelength range. Refractive indices center around 2.15 at values typically found for amorphous TiO2. The electrical properties are characterized by dielectric constant of ε = 26 ± 3, leakage current densities at breakdown of jL = 3.65 . 10-3 A/cm2 and breakdown fields EB > 1 MeV/cm.

Magnetic Properties of Nanocomposites Metal-Carbon

2015 ◽  
Vol 233-234 ◽  
pp. 538-541
Author(s):  
Alexander Aleshnikov ◽  
Haider S. Mohammed Al-Azzawi ◽  
Y. Kalinin ◽  
Alexander Sitnikov ◽  
Oksana Tarasova
Keyword(s):  
Heat Treatment ◽  
Magnetic Properties ◽  
Ion Beam ◽  
Heterogeneous Systems ◽  
Soft Magnetic Properties ◽  
Ion Beam Sputtering ◽  
Ferromagnetic Alloy ◽  
Soft Magnetic ◽  
Before And After ◽  
Beam Sputtering

The films of heterogeneous systems based on ferromagnetic alloy and С were obtained by ion-beam sputtering. The concentration dependence of the resistance of composites was measured before and after heat treatment. The research of magnetostatic and magnetodynamic properties of heterogeneous metal-carbon showed that compounds (Co)Х(C)100-Х (Co40Fe40B20)Х(С)100-Х (Co45Fe45Zr10)Х(C)100-Х after the percolation threshold have good soft magnetic properties.

S043031 Mechanical and Wear Properties of Ti-Ni Alloy Thin Film Formed by Ion Beam Sputtering Method

2011 ◽  
Vol 2011 (0) ◽  
pp. _S043031-1-_S043031-4
Author(s):  
Hitoo TOKUNAGA ◽  
Keisuke MATSUMOTO ◽  
Minoru GOTO ◽  
Takayuki TOKOROYAMA ◽  
Noritsugu UMEHARA
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Alloy Thin Film ◽  
Ion Beam Sputtering ◽  
Wear Properties ◽  
Ni Alloy ◽  
Beam Sputtering

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

TEM Study of Co/Pd and Co/Au Multilayers

1993 ◽  
Vol 51 ◽  
pp. 1036-1037
Author(s):  
A.E.M. De Veirman ◽  
F.J.G. Hakkens ◽  
W.M.J. Coene ◽  
F.J.A. den Broeder
Keyword(s):  
Magnetic Anisotropy ◽  
Ion Beam ◽  
Perpendicular Magnetic Anisotropy ◽  
Optical Recording ◽  
Magnetic Multilayer ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

Nanocrystalline silicon ( nc-Si ) from single ion beam sputtering

2003 ◽  
Vol 762 ◽  
Author(s):  
Z.B. Zhou ◽  
G.M. Hadi ◽  
R.Q. Cui ◽  
Z.M. Ding ◽  
G. Li
Keyword(s):  
Solar Cell ◽  
Ion Beam ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Chamber Pressure ◽  
Ion Beam Sputtering ◽  
High Hydrogen ◽  
Beam Sputtering ◽  
Si Films ◽  
Nanocrystalline Silicon Films

AbstractBased on a small set of selected publications on the using of nanocrystalline silicon films (nc-Si) for solar cell from 1997 to 2001, this paper reviews the application of nc-Si films as intrinsic layers in p-i-n solar cells. The new structure of nc-Si films deposited at high chamber pressure and high hydrogen dilution have characters of nanocrystalline grains with dimension about several tens of nanometer embedded in matrix of amorphous tissue and a high volume fraction of crystallinity (60~80%). The new nc-Si material have optical gap of 1.89 eV. The efficiency of this single junction solar cell reaches 8.7%. This nc-Si layer can be used not only as an intrinsic layer and as a p-type layer. Also nanocrystalline layer may be used as a seed layer for the growth of polycrystalline Si films at a low temperature.We used single ion beam sputtering methods to synthesize nanocrystalline silicon films successfully. The films were characterized with the technique of X-ray diffraction, Atomic Force Micrographs. We found that the films had a character of nc-amorphous double phase structure. Conductivity test at different temperatures presented the transportation of electrons dominated by different mechanism within different temperature ranges. Photoconductivity gains of the material were obtained in our recent investigation.

Formation of Luminescent Si Nanocrystals by High-Temperature Annealing of Ion-Beam-Sputtered Si/SiO2 Multilayers

2003 ◽  
Vol 775 ◽  
Author(s):  
Suk-Ho Choi ◽  
Jun Sung Bae ◽  
Kyung Jung Kim ◽  
Dae Won Moon
Keyword(s):  
Quantum Confinement ◽  
Radiative Recombination ◽  
Ion Beam ◽  
Quantum Confinement Effect ◽  
Visible Range ◽  
Ion Beam Sputtering ◽  
Transmission Electron ◽  
Si Nanocrystals ◽  
Beam Sputtering ◽  
Microscopy Images

AbstractSi/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.

Preparation of thin films of (Tb,Dy)Fe2 giant magnetostrictive alloy by ion beam sputtering process.

1996 ◽  
Vol 8 (1/2) ◽  
pp. 27-28
Author(s):  
Mitsuhiro WADA ◽  
Yoshihito MATSUMURA ◽  
Hirohisa UCHIDA ◽  
Haru-Hisa UCHIDA ◽  
Hideo KANEKO
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering
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