The Interface for Cryogenic-Processed Metal/Inp

1993 ◽  
Vol 318 ◽  
Author(s):  
L. He ◽  
W.A. Anderson ◽  
J. Palmer ◽  
Z. Shi
Keyword(s):  
Barrier Height ◽  
Metal Film ◽  
Schottky Contacts ◽  
Leakage Currents ◽  
Barrier Heights ◽  
Low Leakage ◽  
Better Than

ABSTRACTAu and Pd Schottky contacts to n-InP produce extremely high barrier heights and low leakage currents when deposition is on a substrate cooled to 77K. Extensive chemical and structural analyses indicate that this process causes the metal film to be continuous at 50Å, much better than in standard processing. Stoichiometry of InP near the surface is better maintained with this process. A thin P:O compound may exist at the interface which also contributes to a high barrier height.

Analysis of temperature-dependent Schottky barrier parameters of Cu–Au Schottky contacts to n-InP

2012 ◽  
Vol 90 (1) ◽  
pp. 73-81 ◽  
Author(s):  
V. Lakshmi Devi ◽  
I. Jyothi ◽  
V. Rajagopal Reddy
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Gaussian Distribution ◽  
Ideality Factor ◽  
Thermionic Emission ◽  
Schottky Contacts ◽  
Temperature Dependent ◽  
Semiconductor Interface ◽  
Zero Bias ◽  
Barrier Heights

In this work, we have investigated the electrical characteristics of Au–Cu–n-InP Schottky contacts by current–voltage (I–V) and capacitance–voltage (C–V) measurements in the temperature range 260–420 K in steps of 20 K. The diode parameters, such as the ideality factor, n, and zero-bias barrier height, Φb0, have been found to be strongly temperature dependent. It has been found that the zero-bias barrier height, Φb0(I–V), increases and the ideality factor, n, decreases with an increase in temperature. The forward I–V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the assumption of gaussian distribution of barrier heights, due to barrier inhomogeneities that prevail at the metal–semiconductor interface. The zero-bias barrier height Φb0 versus 1/2kT plot has been drawn to obtain the evidence of a gaussian distribution of the barrier heights. The corresponding values are Φb0 = 1.16 eV and σ0 = 159 meV for the mean barrier height and standard deviation, respectively. The modified Richardson plot has given mean barrier height, Φb0, and Richardson constant, A**, as 1.15 eV and 7.34 Acm−2K−2, respectively, which is close to the theoretical value of 9.4 Acm−2K−2. Barrier heights obtained from C–V measurements are higher than those obtained from I–V measurements. This inconsistency between Schottky barrier heights (SBHs) obtained from I–V and C–V measurements was also interpreted. The temperature dependence of the I–V characteristics of the Au–Cu–n-InP Schottky diode has been explained on the basis of TE mechanism with gaussian distribution of the SBHs.

The parametrization of Coulomb barrier heights and positions using a new universal function in the proximity potential

2016 ◽  
Vol 25 (10) ◽  
pp. 1650082 ◽  
Author(s):  
G. L. Zhang ◽  
M. Pan
Keyword(s):  
Barrier Height ◽  
Coulomb Barrier ◽  
Universal Function ◽  
Proximity Potential ◽  
Fusion Systems ◽  
Barrier Heights ◽  
Better Than

The Coulomb barrier heights are calculated by using the proximity potential with a new universal function in comparison with the results of proximity potentials Prox77, AW95, Bass73, BW91, CW76, DP and Ng80. It is found that the new results of Coulomb barrier heights are better than those of most proximity potentials. Then this proximity potential with the new universal function was used to calculate the Coulomb barrier positions and heights from light fusion systems to heavy fusion systems. The parametrized formulas are obtained for Coulomb barrier height and position, and can reproduce most of calculated barrier heights and positions within the accuracy of [Formula: see text].

Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 927-930 ◽  
Author(s):  
Tomonori Nakamura ◽  
Toshiyuki Miyanagi ◽  
Isaho Kamata ◽  
Hidekazu Tsuchida
Keyword(s):  
Schottky Barrier ◽  
Annealing Temperature ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Barrier Heights ◽  
Excess Current ◽  
Low Leakage ◽  
Low Leakage Current

We compared the electrical characteristics of 4H-SiC(0001) and (000-1) Schottky barrier diodes (SBDs), and derived the Schottky barrier heights (Hbs) of Ta, W, Mo, and Pd on {0001}. We investigated the annealing temperature dependence of Hbs in Mo and the W Schottky contacts for (0001) and (000-1). The Hbs are increased by annealing, except for the W Schottky contact on (0001). The yields of 0.25 cm2 as-deposited Mo-SBDs were 93.3% for (0001) and 71.1% for (000-1), respectively. We also demonstrated over 1 cm2 (0001) as-deposited Mo-SBD with a low leakage current, an excellent ideality factor, and no excess current, encouraging the enlargement of the active area in the SBD.

scholarly journals Electrical Properties of Rapidly Annealed Ir and Ir/Au Schottky Contacts on n-Type InGaN

2012 ◽  
Vol 2012 ◽  
pp. 1-9 ◽  
Author(s):  
V. Rajagopal Reddy ◽  
B. Prasanna Lakshmi ◽  
R. Padma
Keyword(s):  
Barrier Height ◽  
Annealing Temperature ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Interface State ◽  
Schottky Contacts ◽  
Barrier Heights ◽  
Current Voltage ◽  
State Densities ◽  
Optimum Annealing Temperature

The effect of annealing temperature on electrical characteristics of iridium (Ir) and iridium/gold (Ir/Au) Schottky contacts to n-type InGaN have been investigated by means of current-voltage (I-V) and capacitance-voltage (C-V) techniques. It is observed that the barrier height of Ir/n-InGaN and Au/Ir/n-InGaN Schottky diodes increases after annealing at 300∘C for 1 min in N2 ambient compared to the as-deposited. However, the barrier heights are found to be decreased somewhat after annealing at 500∘C for the both Ir and Ir/Au Schottky contacts. From the above observations, it is clear that the optimum annealing temperature for both Ir and Ir/Au Schottky contacts is 300∘C. Moreover, the barrier height (ϕb), ideality factor (n) and series resistance (RS) are determined using Cheung’s and Norde methods. Besides, the energy distribution of interface state densities are determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. Based on the above results, it is clear that both Ir and Ir/Au Schottky contacts exhibit a kind of thermal stability during annealing.

Hybrid Si-IGBT/SiC Rectifier Co-Packs and SiC JBS Rectifiers Offering Superior Surge Current Capability and Reduced Power Losses

2012 ◽  
Vol 717-720 ◽  
pp. 945-948
Author(s):  
Siddarth G. Sundaresan ◽  
Charles Sturdevant ◽  
H. Issa ◽  
Madhuri Marripelly ◽  
Eric Lieser ◽  
...  
Keyword(s):  
Power Dissipation ◽  
Loss Reduction ◽  
Switching Loss ◽  
Power Losses ◽  
Leakage Currents ◽  
Process Innovations ◽  
Novel Device ◽  
Barrier Heights ◽  
Low Leakage ◽  
Surge Current

Novel device design and process innovations made at GeneSiC on SiC JBS rectifiers result in a significant increase in surge current capability with a 33% decrease in power dissipation at 10x rated current. On the 1200 V-class rectifiers, a clear signature of avalanche-limited breakdown with ultra-low leakage currents is observed at temperatures as high as 240 °C. Almost temperature independent Schottky barrier heights of 1.2 eV and ideality factors 2K2 (for 4H-SiC) is directly extracted from the forward I-V characteristics. When compared with an off-the-shelf all-Si IGBT power co-pack, GeneSiC’s GA100XCP12-227 co-pack offers 88% and 47% reduction at 125 °C in the IGBT and free-wheeling diode switching energy losses, respectively. This results in an overall switching loss reduction of about 28% as compared to its silicon counterpart.

Acceptor Delta-Doping for Schottky Barrier Enhancement on n-Type GaAs

1990 ◽  
Vol 181 ◽  
Author(s):  
S. J. Pearton ◽  
F. Ren ◽  
C. R. Abernathy ◽  
A. Katz ◽  
W. S. Hobson ◽  
...  
Keyword(s):  
Barrier Height ◽  
Control Sample ◽  
Schottky Contacts ◽  
Applied Bias ◽  
Fully Depleted ◽  
Barrier Heights ◽  
Effective Barrier ◽  
Delta Doping ◽  
Current Conduction ◽  
Increasing Temperature

ABSTRACTThe incorporation of thin C- or Zn-doped layers under metal Schottky contacts on n-type GaAs can lead to significant enhancements in the effective barrier height. A single C δ-doped layer (p = 1.3 × 1020 cm–3) within 100 Å of the surface leads to a barrier height of ∼0.9 eV, a significant increase over the value for a control sample (∼0.75 eV). The use of two sequential δ-doped layers can lead either to a further enhancement in barrier height, or a decrease depending on whether these layers are fully depleted at zero applied bias. The temperature dependence of current conduction in barrier-enhanced diodes was measured. Both the ideality factor and breakdown voltage degrade with increasing temperature. Zinc δ-doping in a similar fashion produces barrier heights of 0.81 eV for one spike and 0.95 eV for two spikes.

The Effect of Aqueous Chemical Cleaning Procedures on Schottky Contacts to N-Type Gaas

1990 ◽  
Vol 181 ◽  
Author(s):  
M. L. Kniffin ◽  
C.R. Helms
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Annealing Temperature ◽  
Oxide Thickness ◽  
Schottky Contacts ◽  
Initial Surface ◽  
Chemical Cleaning ◽  
Barrier Heights ◽  
Native Oxides ◽  
Cleaning Procedures

ABSTRACTThe effect of interfacial oxides and impurities left by aqueous chemical cleaning procedures on the n-type Schottky barrier heights of various metal-GaAs contacts have been examined as a function of annealing temperature. The as-deposited barrier heights of metals which are expected to be reactive with respect to the native oxides of GaAs (Mn, Cr, Al and Ti) were the most sensitive to variations in the residual oxide thickness. Omitting the final oxide etch from the cleaning sequence resulted in a 50 to 60 meV reduction in the as-deposited barrier height of these metals. However annealing these contacts at temperatures as low as 175 °C results in a barrier height that is independent of the initial surface clean. In contrast, for metals which are expected to be unreactive with respect to the native oxides of GaAs (Ni, Au, Cu and Ag) the pre-deposition cleaning procedure had little effect on either the as-deposited or the annealed Schottky barrier heights.

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Quantum mechanical tunnelling: the missing term to achieve sub-kJ mol−1 barrier heights

2021 ◽  
Author(s):  
Sebastian Kozuch ◽  
Tim Schleif ◽  
Amir Karton
Keyword(s):  
Barrier Height ◽  
Quantum Mechanical ◽  
Effective Barrier Height ◽  
Quantum Tunnelling ◽  
Barrier Heights ◽  
Effective Barrier

Quantum tunnelling can lower the effective barrier height, creating a discrepancy between experiment and theory.

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