Room Temperature Epitaxy of Al (100) on Si (111)

1993 ◽  
Vol 317 ◽  
Author(s):  
Marek Sosnowski ◽  
Samuel Ramac ◽  
Walter L. Brown ◽  
Young O. Kim
Keyword(s):  
Epitaxial Growth ◽  
Room Temperature ◽  
Temperature Treatment ◽  
High Temperature Treatment ◽  
Effusion Cell ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
First Time ◽  
Post Deposition

ABSTRACTThere are a number of published reports on the epitaxial growth of Al(111) on Si(111) surfaces usually following a high temperature treatment of the Si surface in UHV. In contrast to these results, we have for the first time observed dominant epitaxial growth of Al(100) films on Si(111) surfaces that have been carefully cleaned and hydrogen terminated and not heated prior to effusion cell deposition of Al at room temperature in UHV. X-ray diffraction shows sharp and intense Al (200) diffraction, enhanced by post deposition annealing. Crystal quality and the dominance of Al(100) structure depend strongly on the substrate treatment and the off-cut angle, both of which control the steps on the Si(111) surface. The steps were found responsible for the epitaxial alignment of the film and the substrate lattices. Details of this alignment were observed in TEM cross-sectional images of the interface.

scholarly journals Physical Stability and Viscoelastic Properties of Co-Amorphous Ezetimibe/Simvastatin System

2019 ◽  
Vol 12 (1) ◽  
pp. 40 ◽  
Author(s):  
Justyna Knapik-Kowalczuk ◽  
Krzysztof Chmiel ◽  
Karolina Jurkiewicz ◽  
Natália Correia ◽  
Wiesław Sawicki ◽  
...  
Keyword(s):  
Elevated Temperature ◽  
Viscoelastic Properties ◽  
Room Temperature ◽  
Physical Stability ◽  
Ternary Systems ◽  
Storage Conditions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Temperature Conditions ◽  
First Time

The purpose of this paper is to examine the physical stability as well as viscoelastic properties of the binary amorphous ezetimibe–simvastatin system. According to our knowledge, this is the first time that such an amorphous composition is prepared and investigated. The tendency toward re-crystallization of the amorphous ezetimibe–simvastatin system, at both standard storage and elevated temperature conditions, have been studied by means of X-ray diffraction (XRD). Our investigations have revealed that simvastatin remarkably improves the physical stability of ezetimibe, despite the fact that it works as a plasticizer. Pure amorphous ezetimibe, when stored at room temperature, begins to re-crystallize after 14 days after amorphization. On the other hand, the ezetimibe-simvastatin binary mixture (at the same storage conditions) is physically stable for at least 1 year. However, the devitrification of the binary amorphous composition was observed at elevated temperature conditions (T = 373 K). Therefore, we used a third compound to hinder the re-crystallization. Finally, both the physical stability as well as viscoelastic properties of the ternary systems containing different concentrations of the latter component have been thoroughly investigated.

Temperature dependence of the AV3O7 (A = Ca, Sr) structure

2007 ◽  
Vol 63 (6) ◽  
pp. 836-842 ◽  
Author(s):  
Sebastian Prinz ◽  
Karine M. Sparta ◽  
Georg Roth
Keyword(s):  
Single Crystal ◽  
Temperature Dependence ◽  
Crystal Structures ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Space Groups ◽  
Temperature Ranges ◽  
First Time

The V4+ (spin ½) oxovanadates AV3O7 (A = Ca, Sr) were synthesized and studied by means of single-crystal X-ray diffraction. The room-temperature structures of both compounds are orthorhombic and their respective space groups are Pnma and Pmmn. The previously assumed structure of SrV3O7 has been revised and the temperature dependence of both crystal structures in the temperature ranges 297–100 K and 315–100 K, respectively, is discussed for the first time.

Synthesis and Luminescence Properties of Alumina Encapsulated InN Nanorods

2008 ◽  
Vol 8 (12) ◽  
pp. 6290-6296
Author(s):  
Ajay Kumar Mann ◽  
Deepak Varandani ◽  
Bodh Raj Mehta ◽  
Lalit Kumar Malhotra ◽  
G. Mangamma ◽  
...  
Keyword(s):  
Room Temperature ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
Alumina Membrane ◽  
Temperature Plasma ◽  
Cross Sectional ◽  
Scanning Electron Microscope Study ◽  
X Ray ◽  
Step Procedure ◽  
Plasma Annealing

The present study reports a two-step procedure to synthesize InN nanorods inside the pores of an anodic alumina membrane. In the first step, pores of the membrane are filled with indium via electrodeposition. The second step involves nitridation of the as-deposited nanorods by room temperature plasma annealing. X-ray diffraction studies reveal that as-deposited nanorods consist of In, In2O3 and In(OH)3 phases which get converted to mixed hexagonal and cubic phase InN on plasma annealing. Cross sectional scanning electron microscope study reveals nanorod diameter and length to be 150 nm and 1 μm respectively. X-ray mapping results establish that uniform distribution of nitrogen throughout the length of nanorod has been achieved as a result of plasma annealing. Observation of photoluminescence peaks at 1.4 and 1.6 eV corresponding, to the absorption edges of cubic and hexagonal phases of InN show that room temperature photoemission is due to band to band recombination. The use of alumina as a template for nanorod growth prevents postdeposition agglomeration and provides mechanical strength. Possibility of total internal reflection at the InN-Al2O3 interface makes these structures ideally suitable to reduce the emitted light intensity losses.

MBE-Grown GaNAsBi Matched to GaAs with 1.3-μm Emission Wavelength

2004 ◽  
Vol 829 ◽  
Author(s):  
Masahiro Yoshimoto ◽  
Wei Huang ◽  
Kunishige Oe
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Matching ◽  
Peak Energy ◽  
First Time ◽  
Lattice Matched

ABSTRACTGaNyAs1-x-yBix alloy lattice-matched to GaAs has been grown by molecular beam epitaxy (MBE). The lattice-matching of GaNyAs1-x-yBix to GaAs was investigated by X-ray diffraction measurements on a series of GaNyAs1-x-yBix with various GaN molar fractions. GaNyAs1-x-yBix lattice-matched to GaAs was obtained, which was confirmed by its diffraction peak overlapped with the peak of GaAs. Photoluminescence (PL) of 1.3 μm was observed from GaNyAs1-x-yBix epilayer matched to GaAs at room temperature. The temperature coefficient of the PL peak energy in a temperature range 150–300K for GaNyAs1-x-yBix was 1/3 of InGaAsP with a bandgap corresponding to 1.3-μm emission. Both lattice-matching to GaAs and bandgap adjustment to 1.3-μm waveband were achieved for GaNyAs1-x-yBix for the first time. This alloy will lead to the fabrication of laser diodes with an emission of temperature insensitive wavelength.

Mineralogy and formation of evaporite deposits from the Lewis Cliff ice tongue, Antarctica

2014 ◽  
Vol 27 (1) ◽  
pp. 73-84 ◽  
Author(s):  
Tingting Liu ◽  
David L. Bish ◽  
Richard A. Socki ◽  
Ralph P. Harvey ◽  
Eric Tonui
Keyword(s):  
Room Temperature ◽  
Precipitation Process ◽  
Secondary Mineral ◽  
X Ray Diffraction ◽  
Sulfate Ions ◽  
X Ray ◽  
Bodies Of Water ◽  
Evaporite Minerals ◽  
Glacial Tills ◽  
First Time

AbstractThe mineralogy of evaporites from the Lewis Cliff ice tongue (LCIT), Antarctica, and their mineral stabilities and transformation behaviours under different temperature and relative humidity (RH) conditions have been evaluated to elucidate formation mechanism(s). A variety of sodium (Na)-rich evaporite minerals were documented using RH-controlled powder X-ray diffraction (XRD) methods including Na-sulfates (mirabilite and thenardite), Na-carbonate/bicarbonates (nahcolite, occasional trona and natron) and Na-borates (qilianshanite and borax). Mirabilite begins to dehydrate to thenardite, and natron to trona and natrite when exposed to room temperature, even when maintained at RH values similar to those measured at the LCIT (50–70%). The boron-mineral qilianshanite was discovered for the first time in Antarctica within the evaporite mounds. The mirabilite-rich mounds are deduced to have formed via a freezing/sublimation process that occurred in glacial or subglacial bodies of water supplied by glacial tills containing microbially oxidized sulfate ions. The needle-like nahcolite crystals growing on the exteriors of the mounds suggest a dissolution/precipitation process involving atmospheric CO2 and water. The co-existence of nahcolite and boron-bearing minerals indicates the presence of a Na+-, HCO3-- and boron-bearing alkaline brine, which produces qilianshanite as a secondary mineral by reaction of nahcolite and borax in atmospheric CO2 and H2O.

Effects on the amorphous Ga2O3 film surfaces by sub-IB-metal-nano-layers

MRS Advances ◽  
2019 ◽  
Vol 4 (5-6) ◽  
pp. 285-292
Author(s):  
L. I. Juárez-Amador ◽  
M. Galván-Arellano ◽  
Y. M. Hernández-Rodríguez ◽  
J. A. Andraca-Adame ◽  
G. Romero-Paredes ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rf Sputtering ◽  
Sem Analysis ◽  
X Ray Diffraction ◽  
Amorphous Films ◽  
X Ray ◽  
Plasmon Frequency ◽  
First Time ◽  
Amorphous Character

AbstractThis work reports by the first time a method to control the geometry of Ga2O3 films nanocrystallites at 350 °C. The formation of controlled shaped nano-crystallites of γ-Ga2O3 from amorphous Ga2O3 films grown by RF-Sputtering at room temperature driven by nano-layers of group IB metals (Cu, Ag or Au) is studied. The reported results can be explained by the role of subsurface metal nano-layers and the non-equilibrium nature of the sputtering processes. To study the effects on the surface structure and their optical properties arrays of amorphous-Ga2O3/IB-metal/amorphous-Ga2O3 were annealed in dry N2 atmosphere at 350 °C by 50, 100 and 150 min. The experimental results can be explained by the evolution of the amorphous character of the films amorphous films towards the nanocrystalline γ-Ga2O3 phase driven by the metal nano-layer seed nature. As the annealing time was increased the transition from amorphous-Ga2O3 to the nanocrystalline γ-Ga2O3 phase was detected by X-ray diffraction analysis. The transition to the nanocrystalline γ-Ga2O3 is demonstrated by the formation of octahedral, triangle and ball shape nanocrystallites with sizes of ∼5 to 50 nm according to FE-SEM analysis. The influence of the metal nano-layer is clearly seen by the shift of the plasmon frequency resonance produced by the Ga2O3/IB-metal/Ga2O3 arrays in the region from 400 to 600 nm caused by the modification of the interface Ga2O3/IB-metal produced by the applied annealing stages.

Effect of Time on the Fabrication of Bioresorbable Biphasic Granules of Gypsum-Carbonated Apatite for Paediatric Orthopaedic Application

2016 ◽  
Vol 1133 ◽  
pp. 60-64
Author(s):  
Syazana Abu Bakar ◽  
Siti Farhana Hisham ◽  
Mohamad Azmirruddin Ahmad ◽  
Abdul Yazid Abdul Manaf ◽  
Siti Noorzidah Mohd Sabri
Keyword(s):  
Room Temperature ◽  
Xrd Analysis ◽  
Calcium Sulphate ◽  
Carbonate Apatite ◽  
Artificial Bone ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Carbonated Apatite ◽  
Paediatric Orthopaedic

A carbonated apatite (CO3Ap) has a closer chemical composition to the bone mineral which may be suit as an artificial bone substitute. In this study, the fabrication works of biphasic gypsum-carbonated apatite granules has been done through the phase transformation by carbonation and phosphorization of the gypsum granules. Gypsum also known as calcium sulphate dihydrate (CSD) granules was immersed into the 2 M of carbonate and phosphate salt solution at 50 °C and room temperature in variable time. The effect of time on the fabrication of biphasic granules were studied using X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and Fourier transform infrared (FTIR). The XRD analysis was done to confirm the formation of gypsum and hydroxyapatite phases in the biphasic granules. The FTIR spectroscopy indicated that the formation of carbonate apatite was formed in these biphasic granules. The cross sectional morphology of the biphasic granules was observed using SEM. The compositional elucidation was quantitatively measured by CHN analysis to obtain the contents of CO3.Based on the results obtained, it is observed that the CSD was successfully transformed into carbonated apatite to form biphasic granules and time had influenced on the fabrication of these biphasic.

RF-Magnetron Sputtered Strontium Titanate: Structure, Processing and Property Relationships

1999 ◽  
Vol 603 ◽  
Author(s):  
B.J. Gibbons ◽  
Y. Fan ◽  
A.T. Findikoglu ◽  
D.W. Reagor ◽  
Q.X. Jia
Keyword(s):  
Room Temperature ◽  
Low Frequency ◽  
Ozone Treatment ◽  
X Ray Diffraction ◽  
X Ray ◽  
Treated Sample ◽  
Diffraction Peaks ◽  
Compositional Variations ◽  
First Time

AbstractThe low frequency dielectric properties of epitaxial SrTiO3 thin films deposited on LaAlO3 are presented. The films were deposited using radio-frequency magnetron sputtering from stoichiometric targets in an Ar/O2 atmosphere. For the first time, the effects of in situ ozone annealing during the early stages of deposition were explored. X-ray diffraction results indicated that the ozone treatment resulted in more symmetric and sharper diffraction peaks (2 Θ- FWHM decreased from 0.17° to 0.10°). In addition, the peaks for the ozone treated samples were shifted in 2 Θ towards values approaching the bulk value. Rutherford backscattering measurements showed Sr/Ti ratios of 1:1 for these samples, indicating these peak shifts are not due to compositional variations. The dielectric constant of the ozone treated samples increased from 275 at room temperature to 1175 at 22 K (measured at 100 kHz). The effective loss tangent of the device remained between 1 × 10−4 and 1 × 10−3 down to 100 K, where it began to increase. The tunability was also measured. The ozone treated sample showed tunability of 46%, 43% and 38% at 22 K, 40 K and 60 K, respectively. Finally, similar measurements were completed at 1 MHz, indicating a minimal dependence of these properties on frequencies in this range.

scholarly journals Argon irradiation effects on the structural and optical properties of reactively sputtered CrN films

2015 ◽  
Vol 47 (2) ◽  
pp. 187-194 ◽  
Author(s):  
M. Novakovic ◽  
M. Popovic ◽  
N. Bibic
Keyword(s):  
Optical Properties ◽  
Room Temperature ◽  
Optical Parameters ◽  
Total Thickness ◽  
X Ray Diffraction ◽  
Irradiation Effects ◽  
Structural And Optical Properties ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

The present study deals with CrN films irradiated at room temperature (RT) with 200 keV Ar+ ions. The CrN layers were deposited by d.c. reactive sputtering on Si (100) wafers, at nitrogen partial pressure of 5?10-4 mbar, to a total thickness of 280 nm. The substrates were held at 150?C during deposition. After deposition the CrN layers were irradiated with 200 keV Ar+ ions to the fluences of 5?1015 - 2?1016 ions/cm2. Structural characterization was performed with Rutherford backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (XTEM) and X-ray diffraction (XRD). Spectroscopic ellipsometry measurements were carried out in order to study optical properties of the samples. The irradiations caused the microstructrual changes in CrN layers, but no amorphization even at the highest argon fluence of 2?1016 ions/cm2. Observed changes in microstructure were correlated with the variation in optical parameters. It was found that both refractive index and extinction coefficient are strongly dependent on the defect concentration in CrN layers.

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