Si Ion Implantation for Secondary Defect Reduction in Simox Material

1993 ◽  
Vol 316 ◽  
Author(s):  
S.L. Ellingboe ◽  
M.C. Ridgway
Keyword(s):  
Ion Implantation ◽  
Surface Region ◽  
Defect Reduction ◽  
Near Surface ◽  
Secondary Defect ◽  
Si Ion Implantation

ABSTRACTA novel methodology for altering the amount and/or nature of post-anneal disorder in SIMOX substrates has been investigated. A pre-anneal, secondary Si-ion implant (with an ion range less than that of the primary O-ion implant) is shown to effectively getter Si interstitials to the near-surface region during annealing. As a consequence, post-anneal disorder at the front. Si/SiO2 interface is significantly reduced. Alternatively, a Si-ion implant with an ion range greater than that of the O-ion implant can alter the post-anneal disorder at the back Si/SiO2 interface.

Effects of Silicon Ion Implantation upon Thin Gate Oxide Integrity

1992 ◽  
Vol 262 ◽  
Author(s):  
G. -S. Lee ◽  
J. -G. Park ◽  
S. -P. Choi ◽  
C. -H. Shin ◽  
Y. -B. Sun ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Dielectric Breakdown ◽  
Defect Density ◽  
Surface Region ◽  
Gate Oxide ◽  
Near Surface ◽  
Time Dependent Dielectric Breakdown ◽  
Thin Gate Oxide ◽  
Si Ion Implantation ◽  
Gate Oxide Integrity

ABSTRACTIn this study, using oxide breakdown voltage and time-dependent-dielectric breakdown measurements, thermal wave modulated reflectance and chemical etching/optical microscopy, we investigated effects of Si ion implantation upon formation of D-defects and thin gate oxide integrity. Our data show that addition of Si ion implantation with a dose of up to 1013 ions/cm2 improves oxide integrity if the implantation is done at a certain step just before sacrificial oxidation in the Mb DRAM process. However, no improvement in oxide integrity is observed when the same implantation is done on the virgin wafer surfaces at the start of the same Mb DRAM process. We discuss our hypothesis that the improvement in oxide integrity is due to a reduction in the D-defect density in the near-surface region of the wafer.

The Effects of Ion Implantation on the Surface Features of Inconel 600

1985 ◽  
Vol 43 ◽  
pp. 288-289
Author(s):  
John D. Rubio
Keyword(s):  
Grain Boundary ◽  
Ion Implantation ◽  
Nuclear Power ◽  
Power Plants ◽  
Surface Region ◽  
Selective Dissolution ◽  
Boundary Region ◽  
Near Surface ◽  
Inconel 600 ◽  
Steam Generator Tubing

The degradation of steam generator tubing at nuclear power plants has become an important problem for the electric utilities generating nuclear power. The material used for the tubing, Inconel 600, has been found to be succeptible to intergranular attack (IGA). IGA is the selective dissolution of material along its grain boundaries. The author believes that the sensitivity of Inconel 600 to IGA can be minimized by homogenizing the near-surface region using ion implantation. The collisions between the implanted ions and the atoms in the grain boundary region would displace the atoms and thus effectively smear the grain boundary.To determine the validity of this hypothesis, an Inconel 600 sample was implanted with 100kV N2+ ions to a dose of 1x1016 ions/cm2 and electrolytically etched in a 5% Nital solution at 5V for 20 seconds. The etched sample was then examined using a JEOL JSM25S scanning electron microscope.

scholarly journals Microstructure and Mechanical Properties of Ti + N Ion Implanted Cronidur30 Steel

Materials ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 427 ◽  
Author(s):  
Jie Jin ◽  
Wei Wang ◽  
Xinchun Chen
Keyword(s):  
Mechanical Properties ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Structural Modification ◽  
Surface Region ◽  
Grazing Incidence ◽  
Bearing Steel ◽  
Near Surface ◽  
X Ray ◽  
Ion Implanted

In this study, Ti + N ion implantation was used as a surface modification method for surface hardening and friction-reducing properties of Cronidur30 bearing steel. The structural modification and newly-formed ceramic phases induced by the ion implantation processes were investigated by transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and grazing incidence X-ray diffraction (GIXRD). The mechanical properties of the samples were tested by nanoindentation and friction experiments. The surface nanohardness was also improved significantly, changing from ~10.5 GPa (pristine substrate) to ~14.2 GPa (Ti + N implanted sample). The friction coefficient of Ti + N ion implanted samples was greatly reduced before failure, which is less than one third of pristine samples. Furthermore, the TEM analyses confirmed a trilamellar structure at the near-surface region, in which amorphous/ceramic nanocrystalline phases were embedded into the implanted layers. The combined structural modification and hardening ceramic phases played a crucial role in improving surface properties, and the variations in these two factors determined the differences in the mechanical properties of the samples.

Modification of The Near-Surface Region Of Al2O3 By Ion Implantation

1983 ◽  
Vol 24 ◽  
Author(s):  
C. W. White ◽  
G. C. Farlow ◽  
H. Naramoto ◽  
C. J. Mchargue ◽  
B. R. Appleton
Keyword(s):  
Mechanical Properties ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Structural Property ◽  
Surface Region ◽  
Impurity Incorporation ◽  
Near Surface ◽  
Implantation Damage ◽  
Property Changes

ABSTRACTPhysical and structural property changes resulting from ion implantation and thermal annealing of α-A12O3 are reviewed. Emphasis is placed on damage production during implantation, damage recovery during thermal annealing, and impurity incorporation during thermal annealing. Physical and structural property changes caused by ion implantation and annealing are correlated with changes in the mechanical properties.

Secondary Defect Reduction by Multiple MeV Boron Ion Implantation

1990 ◽  
Author(s):  
N. Shimizu ◽  
B. Mizuno ◽  
Y. Hirofuji ◽  
K. Tsuji
Keyword(s):  
Ion Implantation ◽  
Defect Reduction ◽  
Secondary Defect

scholarly journals Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

2021 ◽  
Vol 264 ◽  
pp. 05037
Author(s):  
Ilkhom Bekpulatov ◽  
Ilkhom Turapov ◽  
Sevara Abraeva ◽  
Jakhongir Normuminov
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Electron Spectroscopy ◽  
Surface Region ◽  
Low Energy ◽  
Subsequent Annealing ◽  
Metal Silicide ◽  
Slow Electron ◽  
Near Surface ◽  
Nanoscale Films

Using the methods of electron spectroscopy and slow electron diffraction, we studied the processes of the formation of nanosized metal silicide films in the near-surface region of Si (111) and Si (100) during low-energy implantation of Ba ions and alkaline elements. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nanoscale films of silicides were determined. The type of surface superstructures of thin silicide films has been established.

scholarly journals Nanophase Composites Produced by Ion Implantation: Properties, Problems, and Potential

2000 ◽  
Vol 650 ◽  
Author(s):  
A. Meldrum ◽  
L. A. Boatner ◽  
C. W. White ◽  
R. F. Haglund
Keyword(s):  
Ion Implantation ◽  
Surface Region ◽  
Nanocomposite Materials ◽  
Future Research ◽  
Materials Synthesis ◽  
Research Directions ◽  
Near Surface ◽  
Nanophase Materials ◽  
Future Research Directions ◽  
The Many

ABSTRACTIon implantation has become a versatile and powerful technique for synthesizing nanometer-scale clusters and crystals embedded in the near-surface region of a variety of hosts. The resulting nanocomposite materials often show unique optical, magnetic, and electronic properties. Here we review some of the principal features of this nanophase materials synthesis technique and discuss the outstanding experimental difficulties that currently hamper the development of devices based on the many unique properties of these nanocomposite materials. Possible solutions to these problems and future research directions are discussed.

scholarly journals Nanophase Composites Produced by Ion Implantation: Properties, Problems, and Potential

2000 ◽  
Vol 647 ◽  
Author(s):  
A. Meldrum ◽  
L. A. Boatner ◽  
C. W. White ◽  
R. F. Haglund
Keyword(s):  
Ion Implantation ◽  
Surface Region ◽  
Nanocomposite Materials ◽  
Future Research ◽  
Materials Synthesis ◽  
Research Directions ◽  
Near Surface ◽  
Nanophase Materials ◽  
Future Research Directions ◽  
The Many

AbstractIon implantation has become a versatile and powerful technique for synthesizing nanometer-scale clusters and crystals embedded in the near-surface region of a variety of hosts. The resulting nanocomposite materials often show unique optical, magnetic, and electronic properties. Here we review some of the principal features of this nanophase materials synthesis technique and discuss the outstanding experimental difficulties that currently hamper the development of devices based on the many unique properties of these nanocomposite materials. Possible solutions to these problems and future research directions are discussed.

The Formation of High-Coercivity, Oriented, Nanophase Cobalt Precipitates in Al2O3 Single Crystals by Ion Implantation

1999 ◽  
Vol 581 ◽  
Author(s):  
S. Honda ◽  
F. A. Modine ◽  
T. E. Haynes ◽  
A. Meldrum ◽  
J. D. Budai ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Ion Implantation ◽  
Single Crystals ◽  
Data Storage ◽  
Magnetic Circular Dichroism ◽  
Surface Region ◽  
Magnetic Data ◽  
High Coercivity ◽  
Saturation Field ◽  
Near Surface

ABSTRACTIon-implantation and thermal-processing methods have been used to form nanophase magnetic precipitates of metallic cobalt that are embedded in the near-surface region of single crystals of Al2O3. The Co precipitates are isolated, single-crystal particles that are crystallographically oriented with respect to the host Al2O3 lattice. Embedded nanophase Co precipitates were formed by the implantation of Co+ at an energy of 140 keV and a dose of 8 × 1016 ions/cm2 followed by annealing in a reducing atmosphere. The implanted/annealed Co depth profile, particle size distributions and shapes, and the orientational relationship between the nanophase precipitates and the host crystal lattice were determined using RBS/channeling, transmission electron microscopy, and x-ray diffraction. Magneto-optical effects arising from Co precipitates formed in the near-surface region of Al2O3 were observed and characterized using magnetic circular dichroism. Magnetic properties of the Co-particle/host nanocomposites were investigated in the temperature range of 77 to 295 K in applied fields of up to 10 kG using a superconducting quantum interference device (SQUID) magnetometer. Implantation of the Co particles by Pt or Xe ions produced a large anisotropic increase in their coercivity. Accordingly, these magnetic nanoparticle systems may be of interest for magnetic data storage applications. Details of the magnetic properties of the Co/Al2O3 nanocomposites including their retentivity, coercivity, saturation field, and magnetic anisotropy are presented.

Ion Beam Processing

MRS Bulletin ◽  
1987 ◽  
Vol 12 (2) ◽  
pp. 18-21
Author(s):  
C.W. White
Keyword(s):  
Ion Implantation ◽  
Large Scale ◽  
Wide Spectrum ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Surface Region ◽  
Ion Beams ◽  
Group V ◽  
Near Surface ◽  
Research Activities

Ion beams are used extensively in materials research for processing and synthesis as well as for characterization. In the last few years, enormous advances have been made regarding the use of ion beams for processing or synthesis, and this issue of the MRS BULLETIN will review some of those advances. (The use of ion beams for materials characterization will be the subject of a future issue of the BULLETIN.) The areas covered in this issue are ion implantation, ion beam mixing, ion-assisted deposition, and direct ion beam deposition. For each area, recognized experts in the field prepared overview articles that should be very interesting to those who are not active in the field, and that should be useful to other experts in the field.The first large-scale use of ion beams for materials modification took place in the semiconductor industry more than 20 years ago when ion implantation began to be used to dope the near-surface region of silicon with Group III or Group V dopants. The use of ion implantation in the semiconductor industry has undergone explosive growth, and today almost all electronic devices are fabricated utilizing at lest one ion implantation step.In addition to the semiconductor area, research is being carried out using ion implantation in a multitude of other areas which include ceramics, metals and alloys, insulators, etc. The article on “Ion Implantation” by S.T. Picraux and P.S. Peercy provides an excellent overview of current research activities involving ion implantation of a wide spectrum of materials.

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