Visualization of Ion Channeling of (100)Si and Si1-xGex Epitaxial Grown Layers on Silicon

1993 ◽  
Vol 316 ◽  
Author(s):  
M. Xu ◽  
Z. Atzmon ◽  
A. Schroer ◽  
B. Wilkens ◽  
J.W. Mayer
Keyword(s):  
Diamond Crystal ◽  
Angular Displacement ◽  
Ion Beam ◽  
Three Dimensional ◽  
Target Chamber ◽  
Crystal Axis ◽  
Si Substrates ◽  
Ion Channeling ◽  
Spline Surface ◽  
Knot Sequences

ABSTRACTThree dimensional visualization of ion channeling spectra was obtained by computer graphics in order to observe the crystalline quality and the strain state of thin films. Pure (100)Si and Si1-xGex (x=0.10, 0.18) layers, epitaxially grown on (100)Si substrates, were channeled along the <110> crystal axis with the 2 MeV He++ ion beam in a UHV target chamber. The data were interpolated using a standard bicubic tensor product B-spline surface with uniform knot sequences in x and y directions. With this modeling technique we have shown the orientation of the major planes in a diamond crystal and the angular displacement of the Ge signal in the SiGe epilayer relative to the Si substrate signal due to the presence of tetragonal distortion in the epilayer.

scholarly journals Overview of theory and modeling in the heavy ion fusion virtual national laboratory

2002 ◽  
Vol 20 (3) ◽  
pp. 377-384 ◽  
Author(s):  
R.C. DAVIDSON ◽  
I.D. KAGANOVICH ◽  
W.W. LEE ◽  
H. QIN ◽  
E.A. STARTSEV ◽  
...  
Keyword(s):  
Ion Beam ◽  
National Laboratory ◽  
Three Dimensional ◽  
Development Program ◽  
Heavy Ion ◽  
Target Chamber ◽  
Temperature Anisotropy ◽  
Particle In Cell ◽  
Beam Experiment ◽  
Heavy Ion Fusion

This article presents analytical and simulation studies of intense heavy ion beam propagation, including the injection, acceleration, transport and compression phases, and beam transport and focusing in background plasma in the target chamber. Analytical theory and simulations that support the High Current Experiment (HCX), the Neutralized Transport Experiment (NTX), and the advanced injector development program, are being used to provide a basic understanding of the nonlinear beam dynamics and collective processes, and to develop design concepts for the next-step Integrated Beam Experiment (IBX), an Integrated Research Experiment (IRE), and a heavy ion fusion driver. Three-dimensional nonlinear perturbative simulations have been applied to collective instabilities driven by beam temperature anisotropy, and to two-stream interactions between the beam ions and any unwanted background electrons; three-dimensional particle-in-cell simulations of the 2-MV electrostatic quadrupole (ESQ) injector have clarified the influence of pulse rise time; analytical studies and simulations of the drift compression process have been carried out; syntheses of a four-dimensional particle distribution function from phase-space projections have been developed; and studies of the generation and trapping of stray electrons in the beam self-fields have been performed. Particle-in-cell simulations, involving preformed plasma, are being used to study the influence of charge and current neutralization on the focusing of the ion beam in NTX and in a fusion chamber.

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

Nanoscale Self-Assembly Using Ion and Electron Beam Techniques: A Rapid Review

MRS Advances ◽  
2020 ◽  
Vol 5 (64) ◽  
pp. 3507-3520
Author(s):  
Chunhui Dai ◽  
Kriti Agarwal ◽  
Jeong-Hyun Cho
Keyword(s):  
Electron Beam ◽  
Self Assembly ◽  
Ion Beam ◽  
Three Dimensional ◽  
The Self ◽  
Stress Generation ◽  
Rapid Review ◽  
High Yield ◽  
3D Nanostructures ◽  
Self Assembled

AbstractNanoscale self-assembly, as a technique to transform two-dimensional (2D) planar patterns into three-dimensional (3D) nanoscale architectures, has achieved tremendous success in the past decade. However, an assembly process at nanoscale is easily affected by small unavoidable variations in sample conditions and reaction environment, resulting in a low yield. Recently, in-situ monitored self-assembly based on ion and electron irradiation has stood out as a promising candidate to overcome this limitation. The usage of ion and electron beam allows stress generation and real-time observation simultaneously, which significantly enhances the controllability of self-assembly. This enables the realization of various complex 3D nanostructures with a high yield. The additional dimension of the self-assembled 3D nanostructures opens the possibility to explore novel properties that cannot be demonstrated in 2D planar patterns. Here, we present a rapid review on the recent achievements and challenges in nanoscale self-assembly using electron and ion beam techniques, followed by a discussion of the novel optical properties achieved in the self-assembled 3D nanostructures.

3D Observation of Elemental Distribution of Si-Device using a Dedicated FIB/STEM System

2005 ◽  
Author(s):  
T. Yaguchi ◽  
M. Konno ◽  
T. Kamino ◽  
M. Ogasawara ◽  
K. Kaji ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Elemental Distribution ◽  
Multivariate Statistical ◽  
X Ray ◽  
Sample Rotation ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Elemental Maps

Abstract A technique for preparation of a pillar shaped sample and its multi-directional observation of the sample using a focused ion beam (FIB) / scanning transmission electron microscopy (STEM) system has been developed. The system employs an FIB/STEM compatible sample rotation holder with a specially designed rotation mechanism, which allows the sample to be rotated 360 degrees [1-3]. This technique was used for the three dimensional (3D) elemental mapping of a contact plug of a Si device in 90 nm technology. A specimen containing a contact plug was shaped to a pillar sample with a cross section of 200 nm x 200 nm and a 5 um length. Elemental analysis was performed with a 200 kV HD-2300 STEM equipped with the EDAX genesis Energy dispersive X-ray spectroscopy (EDX) system. Spectrum imaging combined with multivariate statistical analysis (MSA) [4, 5] was used to enhance the weak X-ray signals of the doped area, which contain a low concentration of As-K. The distributions of elements, especially the dopant As, were successfully enhanced by MSA. The elemental maps were .. reconstructed from the maps.

scholarly journals Investigation of the selective color-changing mechanism of Dynastes tityus beetle (Coleoptera: Scarabaeidae)

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Jiyu Sun ◽  
Wei Wu ◽  
Limei Tian ◽  
Wei Li ◽  
Fang Zhang ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Color Change ◽  
Incidence Angle ◽  
Ion Beam ◽  
Three Dimensional ◽  
Water Infiltration ◽  
Photonic Materials ◽  
Local Color ◽  
Water Contact ◽  
Color Changes

AbstractNot only does the Dynastes tityus beetle display a reversible color change controlled by differences in humidity, but also, the elytron scale can change color from yellow-green to deep-brown in specified shapes. The results obtained by focused ion beam-scanning electron microscopy (FIB-SEM), show that the epicuticle (EPI) is a permeable layer, and the exocuticle (EXO) is a three-dimensional photonic crystal. To investigate the mechanism of the reversible color change, experiments were conducted to determine the water contact angle, surface chemical composition, and optical reflectance, and the reflective spectrum was simulated. The water on the surface began to permeate into the elytron via the surface elemental composition and channels in the EPI. A structural unit (SU) in the EXO allows local color changes in varied shapes. The reflectance of both yellow-green and deep-brown elytra increases as the incidence angle increases from 0° to 60°. The microstructure and changes in the refractive index are the main factors that influence the process of reversible color change. According to the simulation, the lower reflectance causing the color change to deep-brown results from water infiltration, which increases light absorption. Meanwhile, the waxy layer has no effect on the reflection of light. This study lays the foundation to manufacture engineered photonic materials that undergo controllable changes in iridescent color.

scholarly journals Protocol for preparation of heterogeneous biological samples for 3D electron microscopy: a case study for insects

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Alexey A. Polilov ◽  
Anastasia A. Makarova ◽  
Song Pang ◽  
C. Shan Xu ◽  
Harald Hess
Keyword(s):  
Electron Microscopy ◽  
Biological Samples ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Entire Volume ◽  
Simple Protocol ◽  
3D Electron Microscopy ◽  
3D Em

AbstractModern morphological and structural studies are coming to a new level by incorporating the latest methods of three-dimensional electron microscopy (3D-EM). One of the key problems for the wide usage of these methods is posed by difficulties with sample preparation, since the methods work poorly with heterogeneous (consisting of tissues different in structure and in chemical composition) samples and require expensive equipment and usually much time. We have developed a simple protocol allows preparing heterogeneous biological samples suitable for 3D-EM in a laboratory that has a standard supply of equipment and reagents for electron microscopy. This protocol, combined with focused ion-beam scanning electron microscopy, makes it possible to study 3D ultrastructure of complex biological samples, e.g., whole insect heads, over their entire volume at the cellular and subcellular levels. The protocol provides new opportunities for many areas of study, including connectomics.

Study of Rehabilitation of Injured Knee Joint Applying Chaotic Theory in Human Body Motion

2007 ◽  
Vol 342-343 ◽  
pp. 581-584
Author(s):  
Byung Young Moon ◽  
Kwon Son ◽  
Jung Hong Park
Keyword(s):  
Time Series ◽  
Lyapunov Exponent ◽  
Angular Displacement ◽  
Three Dimensional ◽  
Gait Pattern ◽  
Body Motion ◽  
Largest Lyapunov Exponent ◽  
Chaos Analysis ◽  
Nonlinear Technique ◽  
Injured Knee

Gait analysis is essential to identify accurate cause and knee condition from patients who display abnormal walking. Traditional linear tools can, however, mask the true structure of motor variability, since biomechanical data from a few strides during the gait have limitation to understanding the system. Therefore, it is necessary to propose a more precise dynamic method. The chaos analysis, a nonlinear technique, focuses on understanding how variations in the gait pattern change over time. Healthy eight subjects walked on a treadmill for 100 seconds at 60 Hz. Three dimensional walking kinematic data were obtained using two cameras and KWON3D motion analyzer. The largest Lyapunov exponent from the measured knee angular displacement time series was calculated to quantify local stability. This study quantified the variability present in time series generated from gait parameter via chaos analysis. Gait pattern is found to be chaotic. The proposed Lyapunov exponent can be used in rehabilitation and diagnosis of recoverable patients.

Electronic Properties of Bismuth Nanowires

2001 ◽  
Vol 679 ◽  
Author(s):  
Stephen B. Cronin ◽  
Yu-Ming Lin ◽  
Oded Rabin ◽  
Marcie R. Black ◽  
Gene Dresselhaus ◽  
...  
Keyword(s):  
Theoretical Model ◽  
Band Structure ◽  
Temperature Dependence ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Temperature Dependent ◽  
Si Substrates ◽  
Bismuth Nanowires ◽  
Bi Nanowire ◽  
Anodic Alumina Templates

ABSTRACTThe pressure filling of anodic alumina templates with molten bismuth has been used to synthesize single crystalline bismuth nanowires with diameters ranging from 7 to 200nm and lengths of 50μm. The nanowires are separated by dissolving the template, and electrodes are affixed to single Bi nanowires on Si substrates. A focused ion beam (FIB) technique is used first to sputter off the oxide from the nanowires with a Ga ion beam and then to deposit Pt without breaking vacuum. The resistivity of a 200nm diameter Bi nanowire is found to be only slightly greater than the bulk value, while preliminary measurements indicate that the resistivity of a 100nm diameter nanowire is significantly larger than bulk. The temperature dependence of the resistivity of a 100nm nanowire is modeled by considering the temperature dependent band parameters and the quantized band structure of the nanowires. This theoretical model is consistent with the experimental results.

Solid and Hollow Micro and Nano Spherical Structures: in Polysilicon and Phosphosilicate Glass

1994 ◽  
Vol 372 ◽  
Author(s):  
M. M. Farooqui ◽  
A. G. R. Evans
Keyword(s):  
Ion Beam ◽  
Three Dimensional ◽  
Optical Components ◽  
Circular Symmetry ◽  
Spherical Structures ◽  
Phosphosilicate Glass ◽  
Micro Systems ◽  
Micro Structures ◽  
Microfabrication Techniques

Fabrication of three dimensional micro structures in silicon and silicon related materials is becoming increasingly important for the realisation of micro systems comprising of sensors, actuators, transducers and analytical assemblies. Fabrication of such devices so far has been mostly in form of structures defined by the crystal planes of silicon, or has involved sophisticated technologies such as ion beam machining, replication using LIGA, or micromachining techniques involving a sequence of alignment and etch stages using binary masks. Structures with circular symmetry are of great interest as micro optical components amongst others, and these are not easily amenable to microfabrication techniques commonly employed.

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