Suppression of Thermal Grain Growth in Nickel by Prior Electron Irradiation

1993 ◽  
Vol 316 ◽  
Author(s):  
Yuzun Gao ◽  
Charles W. Allen ◽  
R. C. Bitrtcher
Keyword(s):  
Electron Beam ◽  
Grain Growth ◽  
Thermal Annealing ◽  
Electron Energy ◽  
Electron Irradiation ◽  
Ion Beam ◽  
In Situ Tem ◽  
Anomalous Effect ◽  
Beam Injection

ABSTRACTAn anomalous effect of electron irradiation on thermal grain growth in Ni has been observed using in situ TEM. Grain growth during thermal annealing was suppressed in areas irradiated with electrons. Grain growth suppression required a minimum electron energy between 100 and 200 keV. This alteration of thermal grain growth is attributed to electron beam injection of a surface contaminant such as carbon. This work points out that care must be exercised in the execution and evaluation of in situ TEM or ion beam experiments that deal with microstructural changes which are highly compositionally sensitive.

Radiation-induced disordering and amorphization—An in situ HVEM study of uranium silicide with comparison to natural processes in zirconolite

1990 ◽  
Vol 48 (4) ◽  
pp. 534-535
Author(s):  
R. C. Birtcher ◽  
L. M. Wang ◽  
C. W. Allen ◽  
R. C. Ewing
Keyword(s):  
Electron Irradiation ◽  
Ion Irradiation ◽  
Ion Beam ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Heavy Ion ◽  
High Energy ◽  
In Situ Tem ◽  
In Situ Experiments

We present here results of in situ TEM diffraction observations of the response of U3Si and U3Si2 when subjected to 1 MeV electron irradiation or to 1.5 MeV Kr ion irradiation, and observations of damage occuring in natural zirconolite. High energy electron irradiation or energetic heavy ion irradiation were performed in situ at the HVEM-Tandem User Facility at Argonne National Laboratory. In this Facility, a 2 MV Tandem ion accelerator and a 0.6 MV ion implanter have been interfaced to a 1.2 MeV AEI high voltage electron microscope. This allows a wide variety of in situ experiments to be performed with simultaneous ion irradiation and conventional transmission electron microscopy. During the electron irradiation, the electron beam was focused to a diameter of about 2 μ.m at the specimen thin area. The ion beam was approximately 2 mm in diameter and was uniform over the entire specimen. With the specimen mounted in a heating holder, the temperature increase indicated by the furnace thermocouple during the ion irradiation was typically 8 °K.

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

In-Situ Dual Beam (FIBSEM) Techniques for Probe Pad Deposition and Dielectric Integrity Inspection in 0.2 μm Technology DRAM Single Cells

1999 ◽  
Author(s):  
Gunnar Zimmermann ◽  
Richard Chapman
Keyword(s):  
Electron Beam ◽  
Single Cell ◽  
Single Cells ◽  
Ion Beam ◽  
Gate Oxide ◽  
Ion Milling ◽  
Dual Beam ◽  
Sem Imaging ◽  
Innovative Techniques

Abstract Dual beam FIBSEM systems invite the use of innovative techniques to localize IC fails both electrically and physically. For electrical localization, we present a quick and reliable in-situ FIBSEM technique to deposit probe pads with very low parasitic leakage (Ipara < 4E-11A at 3V). The probe pads were Pt, deposited with ion beam assistance, on top of highly insulating SiOx, deposited with electron beam assistance. The buried plate (n-Band), p-well, wordline and bitline of a failing and a good 0.2 μm technology DRAM single cell were contacted. Both cells shared the same wordline for direct comparison of cell characteristics. Through this technique we electrically isolated the fail to a single cell by detecting leakage between the polysilicon wordline gate and the cell diffusion. For physical localization, we present a completely in-situ FIBSEM technique that combines ion milling, XeF2 staining and SEM imaging. With this technique, the electrically isolated fail was found to be a hole in the gate oxide at the bad cell.

In situ TEM observation of novel chemical evolution of MnBr2 catalyzed by Cu under electron beam irradiation

2017 ◽  
Vol 686 ◽  
pp. 44-48 ◽  
Author(s):  
Wei Wang ◽  
Xianwei Bai ◽  
Xiangxiang Guan ◽  
Xi Shen ◽  
Yuan Yao ◽  
...  
Keyword(s):  
Electron Beam ◽  
Chemical Evolution ◽  
Electron Beam Irradiation ◽  
In Situ Tem ◽  
Beam Irradiation

scholarly journals In situ TEM thermal annealing of high purity Fe10wt%Cr alloy thin foils implanted with Ti and O ions

2019 ◽  
Vol 461 ◽  
pp. 219-225
Author(s):  
Martin Owusu-Mensah ◽  
Stéphanie Jublot-Leclerc ◽  
Aurélie Gentils ◽  
Cédric Baumier ◽  
Joël Ribis ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
High Purity ◽  
In Situ Tem ◽  
Thin Foils

Electron beam induced rejuvenation in a metallic glass film during in-situ TEM tensile straining

2019 ◽  
Vol 181 ◽  
pp. 148-159 ◽  
Author(s):  
Christian Ebner ◽  
Jagannathan Rajagopalan ◽  
Christina Lekka ◽  
Christian Rentenberger
Keyword(s):  
Electron Beam ◽  
Metallic Glass ◽  
In Situ Tem ◽  
Glass Film

Annihilation Behaviors of Athermal ω-Phase Crystals Due to Electron Irradiation

2000 ◽  
Vol 6 (4) ◽  
pp. 362-367 ◽  
Author(s):  
Hajime Matsumoto ◽  
Eiichi Sukedai ◽  
Hatsujiro Hashimoto
Keyword(s):  
Electron Beam ◽  
Electron Irradiation ◽  
Beam Current ◽  
Dark Field ◽  
Electron Beam Current ◽  
Ω Phase ◽  
Observation Methods ◽  
Incubation Periods ◽  
Beam Currents

AbstractAnnihilation behaviors of athermal ω-phase crystals formed by cooling at 131 K for 10.8 ks under four different electron irradiation conditions of acceleration voltages of 200 kV and 160 kV, and beam currents of approximately 20 pA/cm2 and 5 pA/cm2 were investigated using in situ dark field and HREM observation methods at 131 K. The effect of acceleration voltages on the lifetimes is recognized, i.e., in the case of approximately equal electron beam current, lifetimes at 200 kV become shorter than those at 160 kV. Also, lifetimes depend on the electron beam current at 200 kV, i.e., the higher the beam currents, the shorter the lifetimes become. However, no distinct dependence can be seen at 160 kV. Since annihilations of athermal ω-phase crystals begin after the electron irradiation for a certain period in each condition, which depends on acceleration voltages and beam currents, it is suggested that the annihilation behaviors have incubation periods.

scholarly journals An In situ TEM study of the surface oxidation of palladium nanocrystals assisted by electron irradiation

Nanoscale ◽  
2017 ◽  
Vol 9 (19) ◽  
pp. 6327-6333 ◽  
Author(s):  
Dejiong Zhang ◽  
Chuanhong Jin ◽  
He Tian ◽  
Yalin Xiong ◽  
Hui Zhang ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Surface Oxidation ◽  
Atomic Scale ◽  
In Situ Tem

An In situ atomic scale study of the surface oxidation of Pd nanocrystals.

In-Situ Tem Investigation During Thermal Cycling of thin Copper Films

1996 ◽  
Vol 436 ◽  
Author(s):  
R.-M. Keller ◽  
W. Sigle ◽  
S. P. Baker ◽  
O. Kraft ◽  
E. Arzt
Keyword(s):  
Grain Growth ◽  
Room Temperature ◽  
Dislocation Motion ◽  
In Situ Tem ◽  
Copper Films ◽  
Stress Evolution ◽  
Cu Films ◽  
Transmission Electron ◽  
Insight Into

AbstractIn-situ transmission electron microscopy (TEM) was performed to study grain growth and dislocation motion during temperature cycles of Cu films with and without a cap layer. In addition, the substrate curvature method was employed to determine the corresponding stresstemperature curves from room temperature up to 600°C. The results of the in-situ TEM investigations provide insight into the microstructural evolution which occurs during the stress measurements. Grain growth occurred continuously throughout the first heating cycle in both cases. The evolution of dislocation structure observed in TEM supports an explanation of the stress evolution in both capped and uncapped films in terms of dislocation effects.

Sign in / Sign up

Export Citation Format

Share Document