Joining Ceramics Using Microwave Energy

1993 ◽  
Vol 314 ◽  
Author(s):  
Iftikhar Ahmad ◽  
Richard Silberglitf

AbstractIn the past several years there has been an explosive growth in the use of microwave energy for the processing of a host of materials. Microwave energy provides rapid internal heating which results in an overall reduction in the processing time. The important features of microwave processing are described, as well as several applications.Microwave energy has been used by a few groups for the joining of alumina, mullite, silicon nitride and silicon carbide. The work performed by these groups will be reviewed. Typically, a single mode microwave applicator has been used to join ceramics at temperatures ranging between 1250°C - 1800°C. Microwave joining of ceramics was achieved in a matter of minutes, in contrast to hours reported by conventional methods. The strength of the joints was equal to or greater than the as-received materials. Joining of specimens of sintered silicon carbide (Hexoloy ™ ) using interlayers, and direct joining of reaction bonded silicon carbide (RBSC) to itself and Hexoloy™ has been accomplished recently. Both single mode and multimode microwave applicators were used and larger specimens of RBSC having complex shapes were joined using hybrid heating. The paper describes microwave joining apparatus, techniques and results.

2012 ◽  
Vol 32 (9) ◽  
pp. 1893-1899 ◽  
Author(s):  
Ulrich Degenhardt ◽  
Frank Stegner ◽  
Christian Liebscher ◽  
Uwe Glatzel ◽  
Karl Berroth ◽  
...  

1992 ◽  
Vol 41 (12) ◽  
pp. T151-T156 ◽  
Author(s):  
Yoshinori UWAMINO ◽  
Hisashi MORIKAWA ◽  
Akira TSUGE ◽  
Kiyoshi NAKANE ◽  
Yasuo IIDA ◽  
...  

1986 ◽  
Vol 1 (3) ◽  
pp. 457-467 ◽  
Author(s):  
George Y. Baaklini ◽  
Don J. Roth

The reliability of microfocus x radiography for detecting internal voids in structural ceramic test specimens was statistically evaluated. The microfocus system was operated in the projection mode using low x-ray photon energies (<20 keV) and a 10 μm focal spot. The statistics were developed for implanted internal voids in green and sintered silicon carbide and silicon nitride test specimens. These statistics were compared with previously obtained statistics for implanted surface voids in similar specimens. Problems associated with void implantation and characterization are discussed. Statistical results are given as probability-of-detection curves at a 95% confidence level for voids ranging in size from 20–528 μm in diameter.


1992 ◽  
Vol 269 ◽  
Author(s):  
Iftikhar Ahmad ◽  
Richard Silberglitt ◽  
W. Murray Black ◽  
Hussamaldin S. Sa'Adaldin ◽  
Joel D. Katz

ABSTRACTMicrowave joining of sintered silicon carbide, both to itself and reaction bonded silicon carbide, has been accomplished in a single mode rectangular resonant cavity. Several approaches using different interlayer materials were employed to join sintered silicon carbide. Effective joining of reaction bonded silicon carbide to itself and sintered silicon carbide was accomplished without the use of any interlayer material in the single mode resonant cavity as well as in a multi-mode oven. Specimens cut from 0.95 cm diameter rods were joined in the single mode cavity, whereas a variety of arbitrary shapes and larger specimens (of reaction bonded silicon carbide) were joined in the multi-mode oven.


2002 ◽  
Vol 74 (11) ◽  
pp. 2137-2144 ◽  
Author(s):  
P. Šajgalík

This paper deals with the role of chemistry in the design of high-tech ceramic materials. Grain boundary composition of polycrystalline ceramics dictates the hardness fracture toughness and creep resistance of liquid-phase sintered silicon nitride and silicon carbide materials.


2010 ◽  
Vol 16 (40) ◽  
pp. 12182-12194 ◽  
Author(s):  
Bernhard Gutmann ◽  
David Obermayer ◽  
Benedikt Reichart ◽  
Bojana Prekodravac ◽  
Muhammad Irfan ◽  
...  

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