Spin-Polarization in Ultrathin Rh Layers on Fe (001)

1993 ◽  
Vol 313 ◽  
Author(s):  
A. Chouairi ◽  
H. Dreysse ◽  
H. Nait-Laziz ◽  
C. Demangeat

ABSTRACTThe origin of the Rh polarization at the interface with Fe is discussed within a self-consistent mean-field parameterized tight-binding model. Since experimentally it is not yet known how Rh grows on Fe (001), in this paper we consider both fee and bec growth. When Rh grows in the fee structure, it expands its lattice parameter and a polarization is present up to 3 layers, whereas in the bec case only the Rh atoms at the interface are polarized. The results obtained are compared to recent spin- and angle-resolved photoelectron spectroscopy experiments. Good agreement with experiment is obtained in the case of a fee Rh configuration.

2005 ◽  
Vol 31 (8) ◽  
pp. 585-595 ◽  
Author(s):  
D. A. Areshkin ◽  
O. A. Shenderova ◽  
J. D. Schall ◽  
D. W. Brenner

1988 ◽  
Vol 67 (4) ◽  
pp. 349-353 ◽  
Author(s):  
X.Y. Chen ◽  
W.P. Su ◽  
C.S. Ting ◽  
D.Y. Xing

2000 ◽  
Vol 5 (S1) ◽  
pp. 970-976
Author(s):  
A. Bonfiglio ◽  
M. Lomascolo ◽  
G. Traetta ◽  
R. Cingolani ◽  
A. Di Carlo ◽  
...  

The spectroscopic investigation of GaN/AlGaN quantum wells reveals that the emission energy of such structures is determined by four parameters, namely composition, well-width, strain and charge density. The experimental data obtained by varying these parameters are quantitatively explained by an analytic model based on the envelope function formalism which accounts for screening and built-in field, and by a full self-consistent tight-binding model.


2007 ◽  
Vol 1017 ◽  
Author(s):  
T. Hammerschmidt ◽  
M. A. Migliorato ◽  
D. Powell ◽  
A. G. Cullis ◽  
G. P. Srivastava

AbstractWe propose a tight-binding model for the polarization that considers direct and dipole contributions and employs microscopic quantities that can be calculated by first-principles methods, e.g. by employing Density Functional Theory (DFT). Applying our model to InxGa1-xAs alloys allows us to settle discrepancies between the values of e14 as obtained from experiments and from linear interpolations between the values of InAs and GaAs. Our calculated piezoelectric coefficient is in very good agreement with photo current measurements of InAs/GaAs(111) quantum well samples.


1999 ◽  
Vol 595 ◽  
Author(s):  
A. Bonfiglio ◽  
M. Lomascolo ◽  
G. Traetta ◽  
R. Cingolani ◽  
A. Di Carlo ◽  
...  

AbstractThe spectroscopic investigation of GaN/AlGaN quantum wells reveals that the emission energy of such structures is determined by four parameters, namely composition, well-width, strain and charge density. The experimental data obtained by varying these parameters are quantitatively explained by an analytic model based on the envelope function formalism which accounts for screening and built-in field, and by a full self-consistent tight-binding model.


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