Stability of Nanometer-Size Si Crystals in Amorphous Si Thin Films under Ion Irradiation

1993 ◽  
Vol 311 ◽  
Author(s):  
Chih M. Yang ◽  
Harry A. Atwater
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Crystal Size ◽  
Ion Irradiation ◽  
Shrinkage Rate ◽  
Nanometer Size ◽  
Size Dependent ◽  
Transmission Electron ◽  
Amorphous Si

ABSTRACTIn this paper we discuss the size-dependent shrinkage rate of nanometer-size Si crystals in amorphous Si thin films during ion irradiation. We obtain shrinkage rate of nanometersize crystals at low temperature under ion irradiation by studying the evolution of the crystal size distribution using transmission electron microscopy. Our results indicate that crystals less than 10 nm in diameter decrease in size faster than larger crystals under ion irradiation. In addition, we fit our data to a capillary model for growth of Si crystals in amorphous Si under ion irradiation.

Interactions Of Evaporated Nickel And Silicon Thin Films

1985 ◽  
Vol 54 ◽  
Author(s):  
L. R. Zheng ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Single Crystal ◽  
Formation Temperature ◽  
Si Substrates ◽  
Silicon Thin Films ◽  
Transmission Electron ◽  
Amorphous Si ◽  
The Stability

ABSTRACTInteractions of evaporated Ni and Si thin films were investigated by a combination of backseat tering spectrometry and transmission electron microscopy. The presence of amorphous Si has no significant effects on Ni2Si and NiSi formation, but it drastically lowers the formation temperature of NiSi. Experiments with evaporated thin markers established that Ni is the dominant diffusing species in the growth of the three suicides. The stability of NiSi was examined by sequential evaporation of Ni34Si66 and Ni50Si50 thin films both on Si(100) and on evaporated Si substrates. The results showed that NiSi2 grows at the expence of NiSi when the stucture is in contact with evaporated Si, while it dissociates into NiSi and Si when in contact with single crystal Si.

Transmission Electron Microscopy studies of texture of Cr underlayer of magnetic recording hard disk

1991 ◽  
Vol 49 ◽  
pp. 580-581
Author(s):  
L. Tang ◽  
G. Thomas ◽  
M. R. Khan ◽  
S. L. Duan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Magnetic Recording ◽  
Magnetic Thin Films ◽  
Magnetic Films ◽  
Substrate Bias ◽  
Epitaxial Relationship ◽  
Transmission Electron

Cr thin films are often used as underlayers for Co alloy magnetic thin films, such as Co1, CoNi2, and CoNiCr3, for high density longitudinal magnetic recording. It is belived that the role of the Cr underlayer is to control the growth and texture of the Co alloy magnetic thin films, and, then, to increase the in plane coercivity of the films. Although many epitaxial relationship between the Cr underlayer and the magnetic films, such as ﹛1010﹜Co/ {110﹜Cr4, ﹛2110﹜Co/ ﹛001﹜Cr5, ﹛0002﹜Co/﹛110﹜Cr6, have been suggested and appear to be related to the Cr thickness, the texture of the Cr underlayer itself is still not understood very well. In this study, the texture of a 2000 Å thick Cr underlayer on Nip/Al substrate for thin films of (Co75Ni25)1-xTix dc-sputtered with - 200 V substrate bias is investigated by electron microscopy.

Transmission Electron Microscopy of Evaporated Perylene Thin Films

1990 ◽  
Vol 48 (2) ◽  
pp. 336-337
Author(s):  
C. Ewins ◽  
J.R. Fryer
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Electronics ◽  
High Vacuum ◽  
Amorphous Layer ◽  
Electric Heater ◽  
Transmission Electron ◽  
Polycyclic Aromatic

The preparation of thin films of organic molecules is currently receiving much attention because of the need to produce good quality thin films for molecular electronics. We have produced thin films of the polycyclic aromatic, perylene C10H12 by evaporation under high vacuum onto a potassium chloride (KCl) substrate. The role of substrate temperature in determining the morphology and crystallography of the films was then investigated by transmission electron microscopy (TEM).The substrate studied was the (001) face of a freshly cleaved crystal of KCl. The temperature of the KCl was controlled by an electric heater or a cold finger. The KCl was heated to 200°C under a vacuum of 10-6 torr and allowed to cool to the desired temperature. The perylene was then evaporated over a period of one minute from a molybdenum boat at a distance of 10cm from the KCl. The perylene thin film was then backed with an amorphous layer of carbon and floated onto copper microscope grids.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

Transmission Electron Microscopy characterization of epitaxial III-V semiconductor thin films grown on Si(100) by ion-assisted deposition

1990 ◽  
Vol 48 (4) ◽  
pp. 686-687
Author(s):  
L. Hultman ◽  
C.-H. Choi ◽  
R. Kaspi ◽  
R. Ai ◽  
S.A. Barnett
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Irradiation ◽  
High Energy ◽  
Nucleation Mechanism ◽  
Layer By Layer ◽  
Extended Defect ◽  
Island Formation ◽  
Si Substrates ◽  
Transmission Electron

III-V semiconductor films nucleate by the Stranski-Krastanov (SK) mechanism on Si substrates. Many of the extended defects present in the films are believed to result from the island formation and coalescence stage of SK growth. We have recently shown that low (-30 eV) energy, high flux (4 ions per deposited atom), Ar ion irradiation during nucleation of III-V semiconductors on Si substrates prolongs the 1ayer-by-layer stage of SK nucleation, leading to a decrease in extended defect densities. Furthermore, the epitaxial temperature was reduced by >100°C due to ion irradiation. The effect of ion bombardment on the nucleation mechanism was explained as being due to ion-induced dissociation of three-dimensional islands and ion-enhanced surface diffusion.For the case of InAs grown at 380°C on Si(100) (11% lattice mismatch), where island formation is expected after ≤ 1 monolayer (ML) during molecular beam epitaxy (MBE), in-situ reflection high-energy electron diffraction (RHEED) showed that 28 eV Ar ion irradiation prolonged the layer-by-layer stage of SK nucleation up to 10 ML. Otherion energies maintained layer-by-layer growth to lesser thicknesses. The ion-induced change in nucleation mechanism resulted in smoother surfaces and improved the crystalline perfection of thicker films as shown by transmission electron microscopy and X-ray rocking curve studies.

TEM Characterization of As-Deposited and Annealed Ni/Al Multilayer Thin Film

2010 ◽  
Vol 16 (6) ◽  
pp. 662-669 ◽  
Author(s):  
S. Simões ◽  
F. Viana ◽  
A.S. Ramos ◽  
M.T. Vieira ◽  
M.F. Vieira
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Multilayer Thin Films ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron

AbstractReactive multilayer thin films that undergo highly exothermic reactions are attractive choices for applications in ignition, propulsion, and joining systems. Ni/Al reactive multilayer thin films were deposited by dc magnetron sputtering with a period of 14 nm. The microstructure of the as-deposited and heat-treated Ni/Al multilayers was studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) in plan view and in cross section. The cross-section samples for TEM and STEM were prepared by focused ion beam lift-out technique. TEM analysis indicates that the as-deposited samples were composed of Ni and Al. High-resolution TEM images reveal the presence of NiAl in small localized regions. Microstructural characterization shows that heat treating at 450 and 700°C transforms the Ni/Al multilayered structure into equiaxed NiAl fine grains.

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